GB9006881D0 - Use of a propanol as resist-remover - Google Patents
Use of a propanol as resist-removerInfo
- Publication number
- GB9006881D0 GB9006881D0 GB909006881A GB9006881A GB9006881D0 GB 9006881 D0 GB9006881 D0 GB 9006881D0 GB 909006881 A GB909006881 A GB 909006881A GB 9006881 A GB9006881 A GB 9006881A GB 9006881 D0 GB9006881 D0 GB 9006881D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- remover
- propanol
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7602689A JPH02253265A (en) | 1989-03-28 | 1989-03-28 | Resist peeling agent |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9006881D0 true GB9006881D0 (en) | 1990-05-23 |
GB2229827A GB2229827A (en) | 1990-10-03 |
Family
ID=13593314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9006881A Withdrawn GB2229827A (en) | 1989-03-28 | 1990-03-28 | "Use of a propanol as resist-remover". |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH02253265A (en) |
GB (1) | GB2229827A (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
JP3978255B2 (en) * | 1997-06-24 | 2007-09-19 | Azエレクトロニックマテリアルズ株式会社 | Lithographic cleaning agent |
KR100335484B1 (en) * | 1998-08-05 | 2002-05-04 | 윤종용 | Use of an Alkoxy N-Hydroxyalkyl Alkanamide as Resist Removing Agent, Composition for Removing Resist, Method for Preparing the Same and Resist Removing Method Using the Same |
SG76567A1 (en) * | 1998-08-05 | 2000-11-21 | Samsung Electronics Co Ltd | Resist removing method and apparatus |
US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
JP4236198B2 (en) | 2004-12-28 | 2009-03-11 | 東京応化工業株式会社 | Lithographic cleaning liquid and semiconductor substrate forming method using the same |
JP4588590B2 (en) * | 2005-09-09 | 2010-12-01 | ダイセル化学工業株式会社 | Lithographic cleaning agent or rinse agent |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3012522A1 (en) * | 1980-03-31 | 1981-10-08 | Hoechst Ag, 6000 Frankfurt | METHOD AND DEVELOPER SOLUTION FOR DEVELOPING EXPOSED NEGATIVE WORKING DIAZONIUM SALT LAYERS |
US4786580A (en) * | 1983-12-27 | 1988-11-22 | Hoechst Celanese Corporation | Method of developing imaged diazo material with propanol containing developer composition |
EP0164083B1 (en) * | 1984-06-07 | 1991-05-02 | Hoechst Aktiengesellschaft | Positively acting light-sensitive coating solution |
US4692398A (en) * | 1985-10-28 | 1987-09-08 | American Hoechst Corporation | Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate |
-
1989
- 1989-03-28 JP JP7602689A patent/JPH02253265A/en active Pending
-
1990
- 1990-03-28 GB GB9006881A patent/GB2229827A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2229827A (en) | 1990-10-03 |
JPH02253265A (en) | 1990-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |