JP2001117242A - Cleaner for lithography - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a cleaner for lithography having increased solvent power to a resist, etc., and high safety. SOLUTION: The cleaner for lithography uses one or more solvents selected from the group comprising 1,3-propanediol alkyl ethers, 1,3-propanediol alkyl ether acetates, 1,3-propanediol dialkyl ethers and 1,3-propanediol diacetate optionally in combination with a 1-4C alcohol or propylene glycol methyl ether acetate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning agent for lithography used for dissolving or peeling off a resist or the like, and more particularly, for cleaning a coating apparatus such as in a coater cup, and for coating a resist on or after a substrate. The present invention relates to a cleaning agent for lithography that can be effectively used for removing unnecessary resist, removing a resist from a substrate after the purpose of use of the resist has been achieved, cleaning the substrate after removing the resist, rinsing, and the like.

[0002]

2. Description of the Related Art A lithography technique using a resist has conventionally been used for manufacturing integrated circuit elements, color filters, liquid crystal display elements and the like. In the manufacture of integrated circuit elements and the like using lithography technology, for example, after forming an anti-reflection film on a substrate as necessary, a positive or negative resist is applied, and after removing the solvent by baking, a resist film is formed. An anti-reflection film is formed thereon as required, exposed to various radiations such as ultraviolet rays, far ultraviolet rays, electron beams, X-rays, etc., baked and developed as needed, and a resist pattern is formed. After that, baking is further performed as necessary, and after the underlying substrate is subjected to an etching process or the like, the resist is generally peeled off.

[0003] The coating of the above-mentioned resist and the like includes spin coating, roll coating, reverse roll coating, casting coating,
Various methods such as doctor coating and dip coating are employed. For example, in the production of integrated circuit elements, a spin coating method is mainly used as a resist coating method. In the spin coating method, a resist solution is dropped on a substrate, and the dropped resist solution is cast in the direction of the outer periphery of the substrate by rotation of the substrate, and excess resist solution is scattered and removed from the outer periphery of the substrate to obtain a desired film thickness. Is formed. These excess resist partially remains in the coater cup, and the solvent evaporates and solidifies over time. The solidified product becomes fine powder, and scatters to adhere to the resist substrate, causing a defect in the resist pattern. Therefore, in order to prevent this phenomenon, it is necessary to clean the coater cup every several to several tens of substrates. When a resist film having a desired film thickness is formed on a substrate by spin coating, a part of the resist solution goes around to the back surface of the substrate, or the resist solution is applied to the outer peripheral edge of the substrate more than other portions. There is a disadvantage that a so-called bead is formed, which remains thick, and therefore, it is necessary to remove unnecessary resist from the peripheral portion or the back surface of the side surface of the substrate or to remove the bead. In addition, in a coating method other than the spin coating method, the resist may adhere to unnecessary portions as in the case of the spin coating method. After the substrate is etched or the like, the resist is generally stripped. In this stripping step, the resist is usually dissolved and removed using an organic solvent. Thereafter, the substrate from which the resist has been dissolved and removed is generally washed with pure water or the like in order to remove the fine particles remaining on the surface and leave the substrate surface free from contamination, and proceeds to the next step. When the solvent for stripping the resist is a non-water-soluble organic solvent or an amine-based organic solvent, a step of rinsing with a clean water-soluble organic solvent is often provided immediately after the stripping step without washing with pure water. The reason for this is that when a water-insoluble organic solvent is used as the stripping solution, the resist dissolved in this solvent is prevented from re-adhering to the substrate by pure water, or the water-insoluble organic solvent existing on the substrate surface is prevented. Once the organic solvent is replaced with a water-soluble organic solvent, the replacement with pure water is smooth, and when an amine-based organic solvent is used as a stripping solution, the solvent remains in the pure water to reduce the alkalinity. To avoid corrosion of the metal substrate. After the application is completed,
In order to use the coating device for the next use or to reuse it again as a coating device of a different material, it is necessary to clean the coating device.If there is an antireflection film between the substrate and the resist film, The antireflection film may be removed by a solvent as needed. As described above, in the lithography technique, a cleaning agent is used in various steps, and various cleaning agents including an organic solvent are conventionally known as the cleaning agent (for example, Japanese Patent Publication No. 4-49938).
No.).

Japanese Patent Application Laid-Open No. 6-324499 discloses a technique for improving the solubility of a resin and the solubility of an initiator using β-type propylene glycol monoalkyl ether acetate. However, propylene glycol-based 1,2
-The resin solubility and the initiator solubility were still insufficient due to the presence of the substituent at the site. Some conventional cleaning agents do not have sufficient solubility in resist,
It takes a long time to perform sufficient cleaning, a large amount of cleaning agent is required, and some are very toxic, and there is no one that simultaneously satisfies excellent solubility and safety to the human body. There has been a demand for a detergent that simultaneously satisfies solubility, safety for the human body, and the like. This is not limited to the manufacture of an integrated circuit device, but is also the same in the case of manufacturing a color filter, a liquid crystal display device and the like.

[0005]

SUMMARY OF THE INVENTION The present invention does not have the above-mentioned disadvantages, that is, cleaning of a coating apparatus such as in a coater cup, removal of unnecessary resist on a substrate at the time of resist coating or after resist coating, and removal of resist. It can be usefully used for removing resist from the substrate after achieving the intended purpose, cleaning the substrate after removing the resist, rinsing, etc. An object of the present invention is to provide a lithography cleaning agent having high solubility that can be cleaned and high safety for a human body.

[0006]

The present inventors have made intensive studies and as a result, the above object has been achieved by using a specific compound or a homogeneous solution of the compound and a specific alcohol as a cleaning agent. It turns out. That is, the first of the present invention is 1,3-propanediol alkyl ether,
1,3-propanediol alkyl ether acetate, 1,3-propanediol dialkyl ether,
A cleaning agent for lithography, wherein one or more solvents selected from the group of 1,3-propanediol diacetate are used. In the second aspect of the present invention, 1,3-
Propanediol alkyl ether and / or 1,3-
A first lithography cleaning agent according to the present invention, wherein propanediol alkyl ether acetate is used. A third aspect of the present invention is that the 1,3-propanediol alkyl ether is at least one kind selected from methyl ether, ethyl ether, propyl ether and butyl ether for the first or second lithography of the present invention. It is a cleaning agent. According to a fourth aspect of the present invention, the 1,3-propanediol alkyl ether acetate is at least one selected from methyl ether acetate, ethyl ether acetate, propyl ether acetate and butyl ether acetate. 3 is a cleaning agent for lithography. A fifth aspect of the present invention is that the carbon number is one.
The cleaning agent for lithography according to any one of the first to fourth aspects of the present invention, which comprises a homogeneous solution with at least one kind of aliphatic alcohol selected from alcohols of (1) to (4). A sixth aspect of the present invention is the fifth cleaning agent for lithography according to the fifth aspect, wherein the alcohol having 1 to 4 carbon atoms is at least one selected from ethanol, 1-propanol and 2-propanol. It is. A seventh aspect of the present invention is the cleaning agent for lithography according to any one of the first to sixth aspects, characterized by comprising a homogeneous solution with at least one organic solvent selected from the following group A. Group A Propylene glycol alkyl ether Propylene glycol alkyl ether acetate Ethylene glycol alkyl ether Ethylene glycol alkyl ether acetate Alkyl acetate Propionate alkyl ester Alkoxypropionate alkyl ester Lactate alkyl ester Aliphatic ketone Alkoxybutanol Organic solvent is propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, ethylene glycol ethyl ether acetate, n-butyl acetate, methoxyprop Methyl acid, ethyl ethoxypropionate, 2-heptanone, seventh lithography detergent of the present invention which is characterized in that at least one member selected from methoxybutanol and ethyl lactate. Less than,
The present invention will be described in detail.

The specific compound used in the present invention includes 1,3-propanediol alkyl ether,
3-propanediol alkyl ether acetate,
1,3-propanediol dialkyl ether, 1,3
-At least one solvent selected from the group of propanediol diacetate. Among them, alkyl ethers and / or alkyl ether acetates of 1,3-propanediol are particularly preferred. The specific compound is a highly safe and highly soluble alkyl ether of 1,3-propanediol such as methyl ether, ethyl ether, 1-propyl ether, 2-propyl ether, n
As alkyl ether acetates of -butyl ether, iso-butyl ether, t-butyl ether and / or 1,3-propanediol, methyl ether acetate, ethyl ether acetate, 1-propyl ether acetate, 2-propyl ether acetate, n-
Butyl ether acetate, iso-butyl ether acetate and t-butyl ether acetate are preferred lithography cleaning agents.

In another aspect of the present invention, the specific compound, particularly preferably 1,3-propanediol alkyl ether and / or 1,3-propanediol alkyl ether acetate and an alkyl group having 1 to 4 carbon atoms. A cleaning agent for lithography comprising a homogeneous solution with at least one compound selected from alcohols, in which case the alcohol is preferably at least one selected from ethanol, 1-propanol and 2-propanol.

[0009] Another embodiment of the present invention relates to the above 1,3-
Propanediol alkyl ethers and the aforementioned group A: propylene glycol alkyl ether, propylene glycol alkyl ether acetate, ethylene glycol alkyl ether, ethylene glycol alkyl ether acetate, alkyl acetate, alkyl propionate, alkyl alkoxy propionate, alkyl lactate, A cleaning agent for lithography, comprising a homogeneous solution with at least one compound selected from aliphatic ketones, alkoxybutanols, and alcohols having 1 to 4 carbon atoms in the alkyl group.

Another aspect of the present invention relates to the above-mentioned 1,3-
Propanediol alkyl ether acetate and the above A
Group: propylene glycol alkyl ether, propylene glycol alkyl ether acetate, ethylene glycol alkyl ether, ethylene glycol alkyl ether acetate, alkyl acetate, alkyl propionate, alkyl alkoxypropionate, alkyl lactate, aliphatic ketone,
A cleaning agent for lithography, comprising a homogeneous solution with alkoxybutanol and at least one compound selected from alcohols having 1 to 4 carbon atoms in the alkyl group.

Another embodiment of the present invention relates to a 1,3-propanediol alkyl ether and / or a 1,3-propanediol alkyl ether acetate and a propylene glycol alkyl ether, and further, an alkyl group having 1 to 4 carbon atoms. In a lithography detergent comprising a homogeneous solution with at least one compound selected from alcohols, the propylene glycol alkyl ether is at least one selected from propylene glycol monomethyl ether, propylene glycol monoethyl ether and propylene glycol monopropyl ether. Wherein the alcohol is at least one selected from ethanol, 1-propanol and 2-propanol.

Another embodiment of the present invention is directed to a 1,3-propanediol alkyl ether and / or a 1,3-propanediol alkyl ether acetate and a propylene glycol alkyl ether acetate, and further, an alkyl group having 1 to 4 carbon atoms. In a lithography detergent comprising a homogeneous solution with at least one compound selected from alcohols, the propylene glycol alkyl ether acetate is at least one selected from propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate,
A cleaning agent for lithography, wherein the alcohol is at least one selected from ethanol, 1-propanol and 2-propanol.

In the present invention, the following are preferred as the compounds of the above-mentioned group A.
That is, (1) propylene glycol alkyl ether includes propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol mono n-butyl ether and the like, and (2) propylene glycol alkyl ether acetate includes propylene glycol monomethyl ether. Glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, etc .; (3) ethylene glycol alkyl ethers include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, etc., and (4) ethylene glycol alkyl ether. As acetate, ethylene glycol monomethyl acetate (5) alkyl acetates such as propyl acetate, n-butyl acetate and n-amyl acetate; (6) alkyl propionates such as methyl propionate; (7) Examples of the alkyl propionate alkyl ester include methyl methoxypropionate, ethyl ethoxypropionate, ethyl methoxypropionate, and methyl ethoxypropionate. Examples of the alkyl lactate include methyl lactate and ethyl lactate.
(9) Examples of the aliphatic ketone include 2-butanone, 2-pentanone, 2-hexanone, 2-heptanone, and the like.
0) Examples of the alkoxybutanol include methoxybutanol and ethoxybutanol.

More preferred solvents among these specifically exemplified solvents are methyl ether, ethyl ether, methyl ether acetate, ethyl ether acetate, propylene glycol monomethyl ether and propylene glycol monoethyl ether of 1,3-propanediol. , Propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monoethyl ether acetate, n-butyl acetate, methyl methoxypropionate, ethyl ethoxypropionate, ethyl lactate, 2-heptanone, methoxy Butanol.

The above alkyl ethers and alkyl ether acetates of 1,3-propanediol can be used alone or in combination of two or more. For example, a combination of an alkyl ether and an alkyl ether acetate of 1,3-propanediol, specifically, for example, a combination of methyl ether and methyl ether acetate of 1,3-propanediol is preferable.

The organic solvents of Group A can be used alone or in combination of two or more. Examples of using two or more organic solvents in combination include, for example, propylene glycol alkyl ether and propylene glycol alkyl ether acetate,
Specifically, for example, a combination of propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate is preferred.

Examples of the alcohol having 1 to 4 carbon atoms in the alkyl group include methanol, ethanol, 1-propanol, 2-propanol and 1-butanol. Propanol and 2-propanol are preferred. These alcohols can be used alone or in combination of two or more. Examples of using two or more alcohols in combination include, for example, a combination of ethanol and 1-propanol, and a combination of ethanol and 2-propanol.

The preferred examples of the 1,3-propanediol alkyl ether and / or 1,3-propanediol alkyl ether acetate, compounds of Group A or alcohols have been described above. It goes without saying that the alkyl ether and alkyl ether acetate of 3-propanediol, the organic solvents or alcohols of Group A are not limited to those specifically exemplified.

On the other hand, the mixing ratio of 1,3-propanediol alkyl ether and / or 1,3-propanediol alkyl ether acetate to the compounds and alcohols shown in Group A is not limited to an organic solvent or alcohol. And in what combination it is used. However, in general, the mixing ratio of 1,3-propanediol alkyl ether and / or 1,3-propanediol alkyl ether acetate: the organic solvent shown in Group A: alcohols is 10 to 100 by mass ratio (hereinafter the same). : 0 to 80: 0 to 80, more preferably 40 to 90: 5 to 60: 5 to 60, still more preferably 60 to 80:10 to 40:10 to 40.

The cleaning agent for lithography of the present invention can be applied to any of known positive resists and negative resists. To illustrate typical resists to which the cleaning agent for lithography of the present invention can be applied, for example, a positive type, for example, a quinonediazide-based photosensitive agent and an alkali-soluble resin, a chemically amplified resist, and the like, a negative type, For example, those containing a polymer compound having a photosensitive group such as polyvinyl cinnamate, those containing an aromatic azide compound, those containing an azide compound such as a cyclized rubber and a bisazide compound, and those containing a diazo resin And a photopolymerizable composition containing an addition-polymerizable unsaturated compound, a chemically amplified negative resist, and the like.

The resist material comprising the quinonediazide-based photosensitizer and the alkali-soluble resin is preferably used for applying the cleaning agent of the present invention, and the quinonediazide-based resist material comprising the quinonediazide-based photosensitizer and the alkali-soluble resin is used. Examples of quinonediazide-based photosensitizers and alkali-soluble resins include 1,2
-Benzoquinonediazide-4-sulfonic acid, 1,2-naphthoquinonediazide-4-sulfonic acid, 1,2-naphthoquinonediazide-5-sulfonic acid, esters or amides of these sulfonic acids, and alkali-soluble resins. , Polyvinyl phenol, polyvinyl alcohol, a copolymer of acrylic acid or methacrylic acid and, for example, phenol, o-cresol, m-cresol, p
-Novolak resins produced from one or more phenols such as cresol and xylenol and aldehydes such as formaldehyde and paraformaldehyde. A chemically amplified resist is also a preferable resist to which the cleaning agent of the present invention is applied. Chemically-amplified resists generate an acid by irradiation and change the solubility of the irradiated part in a developing solution by a chemical change caused by the catalytic action of the acid to form a pattern. An acid-generating compound to be generated, and an acid-sensitive group-containing resin which is decomposed or cleaved in the presence of an acid to produce an alkali-soluble group such as a phenolic hydroxyl group or a carboxyl group, an alkali-soluble resin and a crosslinking agent And an acid generator.

On the other hand, among the known antireflective coating compositions applied to prevent light reflected on the substrate due to exposure and to suppress the generation of interference waves in the resist layer, the solvent may contain an organic solvent. The lithography cleaning agent of the present invention can be applied to some of them. The application of the cleaning agent of the present invention will be described in more detail together with a method of forming a resist pattern. First, a resist solution is pretreated as necessary by a conventionally known coating method such as a spin coating method on a silicon substrate or a glass substrate. Etc. An anti-reflection film is applied and formed as necessary before or after the application of the resist. For example, when these coatings are performed by a spin coating method, beads of a resist or an anti-reflection film tend to be formed on the edge of the substrate. And a resist film or an anti-reflection film having a substantially uniform thickness can be formed on the substrate. Further, the resist or the anti-reflection film that has spread around the side surface or the back surface of the substrate can be removed by spraying a cleaning agent. The resist applied to the substrate is prebaked, for example, on a hot plate to remove the solvent, and is usually formed into a resist film having a thickness of about 0.4 to 2.5 microns. The prebake temperature varies depending on the type of solvent or resist used, and is usually at a temperature of about 20 to 200C, preferably about 50 to 150C. The resist film is then masked as necessary using a known irradiation device such as a high-pressure mercury lamp, a metal halide lamp, an ultra-high-pressure mercury lamp, a KrF excimer laser, an ArF excimer laser, an F2 laser, a soft X-ray irradiation device, or an electron beam drawing device. Exposure is performed, and after exposure, after-baking is performed as necessary to improve developability, resolution, pattern shape, and the like, development is performed, and a resist pattern is formed. The development of the resist is usually performed using an alkaline developer. Examples of the alkaline developer include sodium hydroxide and tetramethylammonium hydroxide (TMA
An aqueous solution or an aqueous solution such as H) is used. After the resist pattern is formed, a predetermined circuit element forming process such as etching, plating, or ion diffusion is performed using the resist pattern, and then the resist pattern is peeled off using the cleaning agent of the present invention. After peeling, rinsing can be further performed with the cleaning agent of the present invention, if necessary. When the release solvent is water-insoluble unlike the one of the present invention, or in the case of an amine-based organic solvent, rinsing with the cleaning agent of the present invention, if necessary, is followed by pure water rinsing. Further, the cleaning agent of the present invention can be effectively used for cleaning an application device.

[0023]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to these Examples.

Examples 1 to 16 A resist prepared by dissolving 100 parts by mass of the following novolak resin and 24 parts by mass of a quinonediazide photosensitive agent in propylene glycol monomethyl ether acetate so as to have a solid content of 25% by mass was coated on a 4-inch resist. A silicon substrate was spin-coated so that the film thickness after prebaking was 2 μm, and prebaked at 100 ° C. for 90 seconds on a direct hot plate to form a resist film. In the examples, the thickness of the resist was set to be thicker than a commonly used thickness in order to conduct a solubility test. Novolak resin; m-cresol / p-cresol =
6: 4 Condensation product of formaldehyde and quinonediazide photosensitizer; esterified product of 2,3,4,4'-tetrahydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonyl chloride The formed resist film is shown in Table 1. The solubility test was performed based on the solubility test described below using the detergents having different mixing ratios, and the results shown in Table 1 were obtained.

(Solubility test) The substrate on which the resist film was formed by the above method was immersed in 50 ml of a cleaning agent, and the time (sec) for completely dissolving and removing the resist film was visually measured. Was divided by the dissolution time (sec) and the value (Å / sec) obtained was taken as the dissolution rate.

[Comparative Examples 1 to 5] Propylene glycol methyl ether acetate (PGMEA) as a detergent
Propylene glycol methyl ether (PGME), 1
-The procedure of Example 1 was repeated, except that propanol (1-PA), ethyl lactate (EL), and ethanol were used alone, and the results in Table 1 were obtained.

[0027]

[Table 1]

As is clear from Table 1, 1,3-PDM
E and / or PGMEA, PGM to 1,3-PDMEA
It can be seen that the incorporation of E, ethanol, 1-PA, EL, etc. greatly increases the dissolution rate.

Examples 17 to 23 100 parts by mass of the following adamantane-based acrylic resin and 15 parts by mass of an acid generator, triphenylsulfonium hexafluoroantimony, were added to ethyl lactate so that the solid content became 25% by mass. The dissolved resist was spin-coated on a 4-inch silicon substrate to a thickness of 2 μm after prebaking, and prebaked at 100 ° C. for 90 seconds on a direct hot plate to form a resist film. Adamantane-based acrylic resin: Monohydroxyadamantyl acrylate and t-butyl methacrylate are copolymerized to obtain a composition ratio of 50:50 and a weight average molecular weight of 540.
0, copolymer having a molecular weight dispersity of 1.9 (structural formula (1)) Acid generator: triphenylsulfonium hexafluoroantimony of structural formula (2)

[0030]

Embedded image

The formed resist film was subjected to a solubility test based on the following solubility test using each of the cleaning agents having different mixing ratios shown in Table 2, and the results shown in Table 2 were obtained.

(Solubility test) The substrate on which the resist film was formed by the above method was immersed in 50 ml of a cleaning agent, and the time (sec) for completely dissolving and removing the resist film was visually measured. Was divided by the dissolution time (sec) and the value (Å / sec) obtained was taken as the dissolution rate.

[Comparative Example] PGMEA and PG as detergents
Example 17 was repeated except that ME, EL, 1-PA, and ethanol were used alone, and the results in Table 2 were obtained.

[0034]

[Table 2]

As is clear from Table 2, 1,3-PDM
It can be seen that the incorporation of PGMEA, ethanol, 1-PA, EL and the like in E and / or 1,3-PDMEA significantly increases the dissolution rate.

[0036]

As described above, the cleaning agent of the present invention has a remarkably increased solubility in resists and the like as compared with the conventional cleaning agent, and can provide a highly safe lithography cleaning agent. There is an effect that washing can be sufficiently performed with a small amount of washing for a short time.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H096 AA25 AA27 AA28 DA10 GA18 LA03 LA30 4H003 DA15 DB03 ED28 ED29 ED30 ED32 FA01 5F046 JA05 LA12 MA02

Claims (8)

[Claims] 1. One or more kinds selected from the group consisting of 1,3-propanediol alkyl ether, 1,3-propanediol alkyl ether acetate, 1,3-propanediol dialkyl ether, and 1,3-propanediol diacetate. A cleaning agent for lithography, characterized by using a solvent. 2. The cleaning agent for lithography according to claim 1, wherein 1,3-propanediol alkyl ether and / or 1,3-propanediol alkyl ether acetate is used. 3. The cleaning agent for lithography according to claim 1, wherein the 1,3-propanediol alkyl ether is at least one selected from methyl ether, ethyl ether, propyl ether and butyl ether. 4. The method according to claim 1, wherein the 1,3-propanediol alkyl ether acetate is at least one selected from methyl ether acetate, ethyl ether acetate, propyl ether acetate, and butyl ether acetate. The cleaning agent for lithography according to 1. 5. The cleaning agent for lithography according to claim 1, comprising a homogeneous solution with at least one alcohol selected from alcohols having 1 to 4 carbon atoms. 6. The alcohol having 1 to 4 carbon atoms is at least one selected from ethanol, 1-propanol and 2-propanol.
The cleaning agent for lithography according to the above. 7. The cleaning agent for lithography according to claim 1, comprising a homogeneous solution with at least one organic solvent selected from the following group A. Group A Propylene glycol alkyl ether Propylene glycol alkyl ether acetate Ethylene glycol alkyl ether Ethylene glycol alkyl ether acetate Alkyl acetate Propionate alkyl ester Alkoxypropionate alkyl ester Lactate alkyl ester Aliphatic ketone Alkoxybutanol 8. The organic solvent of Group A is propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, ethylene glycol ethyl ether acetate, N-butyl acetate, methyl methoxypropionate, ethyl ethoxypropionate, 2
The cleaning agent for lithography according to claim 7, wherein the cleaning agent is at least one selected from heptanone, methoxybutanol and ethyl lactate.