JP3491978B2 - Surface anti-reflective coating composition - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming material for photolithography in a fine processing method for producing a semiconductor device or the like.

[0002]

2. Description of the Related Art In recent years, microfabrication technology represented by integrated circuit manufacturing and the like has been increasingly improved in machining accuracy. Taking a dynamic random access memory (DRAM) as an example, submicron processing is now performed. Technology is established as mass production level technology. For this submicron processing, g line (436 nm), i line (365 nm),
A photolithography technique using short-wavelength light such as KrF excimer laser light (248 nm) is used. A photoresist composition is used in these photolithography techniques, and various photoresist compositions having high performance have been proposed by improving the photoresist composition.

The properties required for this photoresist composition are, of course, higher resolution, but the dimensions of the transferred pattern do not vary depending on the coating thickness of the photoresist composition. is important. However, since photolithography is affected by optical interference, there is a limit to reducing the dimensional variation of the pattern with respect to the variation of the resist film thickness.

That is, the irradiated light is usually monochromatic light, and the light incident on the photoresist film repeats intra-film multiple reflection at the upper and lower boundary surfaces of the photoresist film. As a result, the effective amount of light changes due to the interference effect depending on the coating film thickness, so that the finished size of the transferred pattern changes periodically according to the variation of the coating film thickness, and the dimensional accuracy of the pattern is reduced. There was a limit.

As a method for solving this problem, there has been proposed a method of forming an antireflection film on a photoresist film to reduce the influence of the multiple reflection in the film and improve the dimensional controllability (special feature. JP-A-60-149130, JP-A-62-62520, JP-A-62-62521,
JP-A-5-188598). The antireflection film is a transparent film having a refractive index different from that of the photoresist film,
By appropriately selecting the film thickness and the refractive index, optical interference is effectively caused and the influence of intra-film multiple reflection is reduced.

FIG. 1 is a schematic sectional view showing the principle of reducing intra-film multiple reflection by an antireflection film. A photoresist film 22 is formed on a substrate 23 to be processed, and an antireflection film 21 is further formed on the photoresist film 22. The irradiation light 20 passes through the antireflection film 21 and the photoresist film 22, reaches the substrate 23, and is reflected by the substrate 23. The reflected first reflected light 24 reaches the boundary surface 26 between the antireflection film 21 and the photoresist film 22, a part of which is reflected (second reflected light 27) and the rest is transmitted. A part of the transmitted light is further reflected by the antireflection film 21.
Is reflected by a boundary surface 25 between the outside and the outside (third reflected light 28). The second reflected light 27 and the third reflected light 28
It is possible to reduce the intensity by causing interference with and.

However, the conventional antireflection coating composition has various problems as described below. First, not only the thickness of the antireflection film is an odd multiple of (λ / 4n) (λ represents the wavelength of irradiation light, n represents the refractive index of the antireflection film), but also the antireflection film is formed. It is said that the refractive index of the surface antireflection coating composition is preferably the square root of the refractive index of the photoresist film, but there is a problem that this refractive index has a limit.

That is, since the refractive index of the photoresist film is generally about 1.6 to 1.7, the preferable refractive index of the antireflection coating composition is about 1.27 to 1.3.
On the other hand, it is industrially possible to dissolve and remove the antireflection film with a developer of an aqueous medium which is generally used so as not to change the process of coating-exposure-development of photoresist required for the conventional photolithography technique. It is very desirable for the antireflection coating composition to be water-soluble as a result. However, the currently known water-soluble antireflection coating composition has a refractive index of about 1.4, which does not reach the above low refractive index value.

Secondly, even if the refractive index is low, there is a problem that particulate foreign matter is generated in the film within a short time after coating (for example, within 24 hours), and it becomes unusable. There was also. Thirdly, when the photoresist film is developed after the antireflection film is formed, a residue (scum) after the development is formed.
There is also a problem that it cannot be put to practical use because a large number of cases occur.

[0010]

SUMMARY OF THE INVENTION In view of the above background, an object of the present invention is to have a low refractive index (1.4 or less) and to form and remove a coating film well in an aqueous medium, and The object of the present invention is to provide a comprehensively excellent surface antireflection coating composition in which the generation of residues (scum) is extremely small.

[0011]

As a result of various investigations conducted by the present inventors in order to achieve the above object, the above object can be achieved by using a surface antireflection coating composition containing a specific compound. The inventors have found that they can be achieved and completed the present invention. That is, the gist of the present invention is to provide a surface antireflection coating composition containing a water-soluble fluorine compound and water, wherein the water-soluble fluorine compound is a fluorinated alkyl polyether sulfonic acid.
And a non-metallic salt thereof, containing at least one compound selected from the group consisting of non-metallic salts thereof .

The present invention will be described in detail below. In the present invention, a surface-antireflection coating composition is used as a water-soluble fluorinated compound as a fluorinated alkyl polyether sulfone.
It is essential to contain at least one selected from acid and non-metallic salts thereof .

The amount used is not particularly limited, but is preferably 1% or more, more preferably 2% or more, and preferably 10% or less, more preferably 5% or less, based on the total weight of the composition. is there. Generally known polyvinyl alcohol, polyacrylic acid, polyvinylpyrrolidone, etc. do not have a sufficient refractive index. Typical examples of the fluorinated alkyl polyether sulfonic acid used in the present invention include compounds having the following general formula.

[0014]

[Chemical formula 1]

[0015] (wherein, in the formula, ^{R 1} represents an alkyl group in which some or all hydrogen atoms are replaced with fluorine ^atoms, in each R 2 to R ⁵ and R ¹¹ to R ¹³ hydrogen atoms one A part or all of which is an alkylene group substituted with a fluorine atom, and a plurality of R ² , R ³ , R ⁵ , R ¹¹ and
R ¹³ may be each the same or different, Also, R
For the ³ and ^{R 5, R 11} and ^{R 13} may be the same or different, respectively in the same molecule, n1 to n3, n
7 to n8 each represent an integer of 1 or more. ) Here, the carbon number of the alkyl group of R ¹ is usually about 1 to 20,
^{R 2, R 3, R 5} , R11 and the carbon number of the alkylene group ^{R 13} is usually about 1 to 5 carbon atoms in the alkylene <br/> down groups ^{R 4} and ^{R 12,} usually about 1 to 20 Is.

In the present invention, the sulfonic acid as described above may be used in the form of a nonmetallic salt. In the present specification, the non-metallic salt means a salt containing no metal. Examples of the non-metallic salt of sulfonic acid include, for example,
Examples thereof include ammonium salts which may be substituted with an alkyl group, such as ammonium salts, monoalkylammonium salts, dialkylammonium salts, trialkylammonium salts and tetraalkylammonium salts. Examples of the alkyl group constituting the salt include an alkyl group having about 1 to 3 carbon atoms, of which a part or all of hydrogen atoms may be substituted with fluorine atoms. The above sulfone
The use of an acid metal salt is not preferable because the metal may contaminate the object to be processed (substrate) to be processed.

In the present invention, it is preferable to use a fluorinated alkyl polyether sulfonic acid and / or a non-metallic salt thereof. The molecular weight of the fluorinated alkyl polyether sulfonic acid or its salt is not particularly limited as long as it meets the purpose, but it is usually 300 or more, preferably 5 or more.
00 or more and usually 100,000 or less, preferably 50
It is 000 or less. Further, these may be used as a mixture of two or more kinds. A specific example of such a water-soluble fluorine compound is E. coli commercially available as a reagent from Aldrich. I. Examples thereof include sulfonic acids such as perfluoroalkyl polyether sulfonic acid, which is generally called Nafion (registered trademark) manufactured by du Pont .

[0018]

Two or more kinds of the above water-soluble fluorine compounds can be contained. The composition of the present invention may contain only the above compound and water, but it is preferable to contain a water-soluble fluorine compound other than the above in order to further reduce the refractive index. As the water-soluble fluorine compound,
Examples thereof include fluorinated alkyl sulfonic acid and fluorinated alkyl carboxylic acid such as perfluoroalkyl sulfonic acid and perfluoroalkyl carboxylic acid, and specifically, perfluorooctane sulfonic acid, perfluorodecane sulfonic acid, perfluorooctanoic acid, perfluorodecanoic acid, perfluoro Examples thereof include mono- or di-sulfonic acid and mono- or dicarboxylic acid having 4 to 20 carbon atoms such as glutaric acid and perfluorosebacic acid. Among these, sulfonic acid compounds are particularly preferable. It is also possible to use these non-metallic salts, for example ammonium salts,
Specific examples thereof include ammonium salts which may be substituted with an alkyl group, such as monoalkyl ammonium salts, dialkyl ammonium salts, trialkyl ammonium salts and tetraalkyl ammonium salts.

The alkyl group constituting the above salt is preferably an alkyl group having 1 to 3 carbon atoms, and some or all of the hydrogen atoms may be substituted with fluorine atoms. When the above-mentioned metal salt of sulfonic acid or carboxylic acid is used, the object (substrate) to be treated may be contaminated with metal, which is not preferable. Two or more of the above-mentioned perfluoroalkyl sulfonic acids and non-metallic salts thereof and perfluoroalkyl carboxylic acids and non-metallic salts thereof may be contained.

It is preferable that the content of the water-soluble fluorine compound to be further contained is larger because the refractive index is lowered, but if it is too large, problems such as inability to form a good coating film may occur. Usually, it is 95% or less, preferably 90% or less based on the total solid content weight.

Water is used as the solvent in the composition of the present invention. To improve the solubility of the fluorine compound, lower alcohols such as methanol, ethanol and propanol, water such as lower alkylcarboxylic acids such as acetic acid and the like are used. You may use the aqueous mixed solvent of the organic solvent and water which can be mixed. In this case, if the mixing ratio of the organic solvent is too large, the photoresist film as the lower layer may be dissolved. Therefore, the amount used is usually 30% by weight or less, preferably 20% by weight or less, based on all the solvents. is there.

In the composition of the present invention, in addition to the above compounds, a water-soluble liquid fluorine compound may be allowed to coexist in order to form a favorable coating film and to improve the stability of the formed coating film. It is possible. These water-soluble liquid fluorine compounds are used as a solvent, and have a boiling point at 1 atm of 50 ° C. or higher, preferably 80 ° C. or higher, more preferably 90 ° C. or higher, and 0 ° C. or higher. A liquid water-soluble fluorine compound, specifically, fluoroalkyl alcohols such as trifluoroethanol, tetrafluoropropanol, and octafluoroamyl alcohol, fluoroalkylcarboxylic acids such as fluoroacetic acid, and fluorocarbons such as trifluoromethanesulfonic acid. Examples thereof include alkyl sulfonic acids. Among these, fluoroalkyl alcohols having 6 or less carbon atoms are particularly preferable.
The solubility of these water-soluble liquid fluorine compounds in water is preferably as high as possible, but there is no problem in practical use as long as they are soluble in the aqueous mixed solvent. This water-soluble liquid fluorine compound does not necessarily have to be contained in the composition of the present invention, but is preferably contained in order to improve the stability of the coating film and achieve a lower refractive index. If the amount of the water-soluble liquid fluorine compound used is too large, not only there is an upper limit to the improvement of the effect, but problems such as impairing the properties of the coating film may occur, and if the amount is too small, the effect is improved. 0.1% for all solvent components
-10% by weight, preferably 0.5-8% by weight, more preferably 1-6% by weight.

The composition of the present invention may be added with other compounds having a low refractive index such as fluorine-based compounds. In this case, the low refractive index compound is soluble in the above medium and its mixing ratio is It is preferably 20% by weight or less based on the total solid content. A surfactant or the like may be added to the composition of the present invention in order to further improve the coating property and the like. In addition, a light absorber may be added in order to effectively reduce the influence of the multiple reflection in the film.

The surface antireflection coating composition of the present invention is usually applied on a photoresist film applied on a substrate and acts as an antireflection film. The photoresist film is exposed through the antireflection film, the pattern is transferred, and then the pattern is formed by development. As the photoresist composition for forming the photoresist film, in principle, all photoresist compositions using monochromatic light can be used. That is, a conventional photoresist composition for g-line, i-line, and excimer laser light (248 nm, 193 nm) can be used, and the material can be either positive type or negative type.

Specific photoresist compositions include:
Polyvinylcinnamate-based and polyisoprene cyclized rubber-based photocrosslinking photoresist compositions (Journal of Organic Chemistry, Vol. 42, No. 11, 979 etc.), 1,2-naphthoquinonediazide-based photosensitizer And an alkali-soluble resin dissolved in an organic solvent (Journal of Synthetic Organic Chemistry, Vol. 42, No. 11, p. 979, JP-A-62-13663).
No. 7, JP-A-62-153950, etc.), a so-called chemically amplified photoresist which exhibits the performance of a photoresist by being polymerized or depolymerized by an acid or a base generated by light irradiation (JP-A-59-45439). No. 4, JP-A-4-1368
No. 60, JP-A-4-136941, etc.) and the like.

Examples of the resin used in the photoresist composition include polyvinyl cinnamate resin produced from polyvinyl alcohol and cinnamic acid chloride, and cyclized rubber resin containing 1,4-cis polyisoprene as a main component. To be
If necessary, 4,4′-diazidochalcone,
A photo-crosslinking agent such as 2,6-di- (4'-azidobenzylidene) cyclohexanone may be added.

1, 2 used in the photoresist composition
-As the naphthoquinonediazide-based photosensitizer, 1,2-benzoquinonediazide-4-sulfonic acid ester derivatives, 1,2-naphthoquinonediazide-4-sulfonic acid ester derivatives of compounds having a phenolic hydroxyl group, 1,
2-naphthoquinone diazide-5-sulfonic acid ester derivative etc. are mentioned. Here, the compound having a phenolic hydroxyl group is produced from polyhydroxybenzophenones such as 2,3,4-trihydroxybenzophenone, polyhydroxybenzoate esters such as ethyl gallate, phenols and aldehydes. Examples thereof include polyphenols and novolac resins.

As the alkali-soluble resin used in the photoresist composition, the novolak resin obtained by polycondensing a phenol derivative and an aldehyde derivative, an acrylic acid derivative, a cinnamic acid derivative, a styrene derivative, a maleic acid derivative and the like are used as monomers. Examples thereof include polymers obtained by polymerizing these.

Examples of the photoresist composition include a resin having an acid-labile group such as poly (p-tert-butoxycarbonyloxy) styrene and an acid by irradiation with light such as triphenylsulfonium hexafluoroarsenate. And a photo-irradiating portion which is solubilized or insolubilized in a developing solution. Further, it is composed of a novolak resin obtained by polycondensing a phenol derivative and an aldehyde derivative, and a compound that generates an acid by light irradiation such as alkoxymethyl urea or halogenated methyl triazine, and the light irradiation portion becomes insoluble in the developing solution. A photoresist composition and the like are also included.

The photoresist composition usually contains an organic solvent. Examples of the organic solvent include aromatic hydrocarbons such as toluene and xylene; acetic acid esters such as ethyl acetate; and mono or organic solvents such as ethyl cellosolve. Mono- or di-alkyl ethers of di-ethylene glycol; mono- or di-, such as propylene glycol monomethyl ether
Propylene glycol mono- or di-alkyl ethers; Propylene glycol monomethyl ether acetate and other alkyl cellosolve acetates; Esters such as ethylene carbonate and γ-butyrolactone; Methyl ethyl ketone, 2-heptanone, cyclopentanone and other ketones; Lactic acid And hydroxy, alkoxy or oxyalkyl carboxylic acid alkyl esters such as ethyl, methyl 3-methoxypropionate and ethyl pyruvate; and the like.

These solvents are used to dissolve the resin and the photosensitizer,
It is appropriately selected in consideration of the stability of the photoresist composition. Further, these photoresist compositions may contain a surfactant for improving coatability, a sensitizer for improving sensitivity, and the like, if necessary. The substrate used for pattern formation is not particularly limited, but a substrate for IC production such as a silicon substrate or a gallium arsenide substrate is generally used.

The method of applying the photoresist composition on the substrate and the method of applying the antireflective coating composition on the photoresist film are not particularly limited, and they are carried out by a conventional method using a spin coater or the like. . The film thickness of the obtained photoresist composition is usually about 0.3 to 5.0 μm. After applying the photoresist composition onto the substrate, a heat-drying treatment may be carried out, usually using a hot plate or the like at 70 to 100 ° C. for 30 to 120 seconds.

The film thickness of the antireflection film may be appropriately optimized according to the exposure wavelength and the like in accordance with the above-mentioned antireflection principle. When a water-soluble composition is used as the composition for forming the antireflection film, the formed antireflection film can be easily removed after exposure, during development with an alkaline aqueous solution, or by simply washing with water. .

The exposure wavelength used for transferring an image to the photoresist film formed on the substrate is usually g-line (436 nm), i-line (365 nm), XeCl excimer laser light (308 nm), KrF excimer laser. Light (248 nm), ArF excimer laser light (193n
m) etc. are effective. After exposing the photoresist film and the antireflection film, if necessary, post-exposure heating (PEB) may be performed. As a PEB condition, a hot plate or the like is used, and a condition of about 90 to 120 ° C. for about 60 to 120 seconds is preferably used. A convection oven may be used instead of the hot plate, but this usually requires a longer time than when using a hot plate.

As the alkaline aqueous solution for developing the photoresist after exposure, inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, aqueous ammonia, sodium silicate and sodium metasilicate, ethylamine and n-propylamine are used. Primary amines such as
Aqueous solutions of secondary amines such as diethylamine and di-n-propylamine, tertiary amines such as triethylamine and methyldiethylamine, and quaternary ammonium salts such as tetramethylammonium hydroxide and trimethylhydroxyethylammonium hydroxide. Alternatively, a product obtained by adding alcohol or the like to this can be used.

If necessary, a surfactant or the like can be added for use. The developing time is preferably about 30 to 180 seconds and the developing temperature is preferably about 15 to 30 ° C. In addition, the photoresist developer is usually used after being filtered to remove insoluble matter at the time of use.

[0038]

EXAMPLES The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples unless it exceeds the gist.

Example 1 Heptadecafluorooctane sulfonic acid was neutralized with an aqueous solution of tetramethylammonium hydroxide (neutralization ratio: 10
0%) and perfluoroalkyl polyether sulfonic acid (Aldrich reagent; Nafion (registered trademark) -perfluoronated ion-ex).
change powder) and a weight ratio of 7: 3.
Was mixed with water, dissolved in water so that the solid content concentration became 5%, and then filtered through a 0.2 μm filter to prepare a surface antireflection coating composition (A). The above Naf
Ion (registered trademark) is a water-soluble fluorine compound having the following structure.

[0040]

[Chemical 3]

This surface antireflection coating composition (A) was spin-coated on a silicon wafer having a diameter of 5 inches, and then baked on a hot plate at 95 ° C. for 60 seconds to dry the coating film to a film thickness of about 1000Å. A coating film of The observation result of the coating film property of this coating film and the measurement result of the refractive index are shown in the table.
Shown in 1. Table 1 also shows the results of observing the dissolution peelability of the coating film by immersing the coating film in water at 23 ° C.

Subsequently, a quinonediazide positive photoresist (manufactured by Tokyo Ohka Kogyo Co., Ltd .; TSMR-V9).
0) was spin-coated on a silicon wafer having a diameter of 5 inches and then baked on a hot plate at 90 ° C. for 90 seconds to dry the coating film to obtain a photoresist coating film having a film thickness of 10350Å. A surface antireflection coating composition (A) was spin-coated on this photoresist film, followed by heating and baking at 90 ° C. for 60 seconds on a hot plate to dry the coating film, and then the surface antireflection coating film (film thickness 700Å ), The photoresist coated film wafer was obtained.

This wafer was loaded with a g-line stepper (GCA).
(Manufactured by DSW-6700B), exposed through a mask with a test pattern, PEB is performed on a hot plate at 120 ° C. for 90 seconds, and then with a 2.38 wt% tetramethylammonium hydroxide aqueous solution for 60 seconds. Paddle developed. 1μ line with 10μm square development pattern and 1μ line with 1: 1 finish.
The line and space pattern of m was observed with a scanning electron microscope. The results are shown in Table-1.

Further, another quinonediazide positive photoresist (manufactured by Mitsubishi Kasei Co., Ltd .; MCPR-).
i6600) is similarly applied to the wafer and baked, and
A plurality of wafers having a photoresist film with a film thickness of 12,000 Å from 0000 Å to about 100 Å each were obtained. Then, the surface antireflection coating composition (A) was applied onto the photoresist film in a thickness of 650Å in the same manner as described above. This wafer was exposed through an i-line stepper (manufactured by Nikon; NSR1755i7A) through a mask with a test pattern, and PEB was performed on a hot plate at 120 ° C. for 90 seconds, and then 2.38% by weight of tetramethylammonium was used. Paddle development was performed for 60 seconds with an aqueous hydroxide solution. The finished line width of a 0.7 μm mask pattern image at the same exposure amount was measured using an electron microscope, and the magnitude of the change in the finished line width with respect to the change in the thickness of the photoresist film was determined. The results are shown in Table-1.

Comparative Example 1 A surface antireflection coating composition (B) was prepared in the same manner as in Example 1 except that Nafion (registered trademark) was not used, and the coating film properties thereof were observed. The refractive index was measured. Further, the dissolution peelability was observed in the same manner as in Example 1.
The results are shown in Table-1.

Comparative Example 2 Nafion (registered trademark) was mixed with polyvinylpyrrolidone (B
ASF Co., Ltd .; Rubiscol K-90), except that the surface antireflection coating composition (C) was prepared in the same manner as in Example 1, and the coating film properties thereof were observed and refraction was performed. The rate was measured. Further, in the same manner as in Example 1, the dissolution and peeling property was observed, and the magnitude of the change in the finished line width with respect to the change in the photoresist film thickness was determined. The results are shown in Table-1.

Comparative Example 3 The tetramethylammonium salt of heptadecafluorooctane sulfonic acid was changed to the ammonium salt of pentadecafluorooctanoic acid, and Nafion® was added to α-perfluorononenyl-ω-methoxypolyoxyethylene (C
_{9 F 17 O- (CH 2 CH} 2 O) 20 -CH 3: Neos Co., the Ftergent -250), except that instead of each in the same manner as in Example 1, a surface antireflective coating composition (D) was prepared, the properties of the coating film thereof were observed, and the refractive index was measured. Further, in the same manner as in Example 1, the dissolution and peeling property, the development removal pattern of 10 μm square, and the line & space pattern of 1 μm were observed. The results are shown in Table-1.

Comparative Example 4 In Example 1 except that the tetramethylammonium salt of heptadecafluorooctane sulfonic acid was replaced with the ammonium salt of pentadecafluorooctanoic acid, and Nafion (registered trademark) was replaced with polyacrylic acid. A surface antireflection coating composition (E) was prepared in the same manner as in (1), and the properties of the coating film were observed and the refractive index was measured. In addition, Example 1
In the same manner as the above, the dissolution and peeling property, the development removal pattern of 10 μm square and the line & space pattern of 1 μm were observed. The results are shown in Table-1.

Comparative Example 5 In the same manner as in Comparative Example 2, except that the mixing ratio of the tetramethylammonium salt of heptadecafluorooctanesulfonic acid and polyvinylpyrrolidone was changed from 7: 3 to 8: 2 by weight. A surface antireflection coating composition (F) was prepared, the properties of the coating film thereof were observed, and the refractive index was measured. Further, the dissolution peelability was observed in the same manner as in Comparative Example 2. The results are shown in Table-1.

[0050]

[Table 1]

[0051]

EFFECTS OF THE INVENTION According to the present invention, it has a low refractive index suitable as a surface antireflection film for photoresists, can be removed by an aqueous medium, and has no foreign matter in the coating film. It is possible to provide a composition for forming a surface antireflection film in which the generation of the residue is extremely small.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing the principle of reducing intra-film multiple reflection by an antireflection film.

[Explanation of symbols] 20 irradiation light 21 Antireflection film 22 Photoresist film 23 board 24 First reflected light 25 Boundary between the antireflection film and the outside 26 Interface between antireflection film and photoresist film 27 Second reflected light 28 Third reflected light

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mineo Nishi, 1-1 Kurosaki Shiroishi, Yawatanishi-ku, Kitakyushu Sanritsu Kasei Co., Ltd. Kurosaki Plant (72) Inventor Hideo Makishima 1-1-3 Kurosaki Shiroishi, Hachiman Nishi-ku, Kitakyushu Ryosei Co., Ltd. Kurosaki Plant (56) Reference JP-A-7-181685 (JP, A) JP-A-6-51523 (JP, A) JP-A-5-188598 (JP, A) JP-A-62-1 62520 (JP, A) JP-A-6-273926 (JP, A) JP-A-7-181684 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) G03F ^7/ 00-7 / 42 H01L 21/027

Claims (2)

(57) [Claims] 1. A water-soluble fluorine compound and the surface antireflective coating composition comprising water, water-soluble fluorine compound, off
Fluorinated alkyl polyether sulfonic acids and their non-metals
A surface antireflection coating composition comprising one or more compounds selected from the group consisting of organic salts . 2. It further comprises one or more compounds selected from the group consisting of fluorinated alkyl sulfonic acids and non-metallic salts thereof, and fluorinated alkyl carboxylic acids and non-metallic salts thereof. Item 2. The surface antireflection coating composition as described in Item 1.