KR101283571B1 - 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법 - Google Patents

공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법 Download PDF

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Publication number
KR101283571B1
KR101283571B1 KR1020120025148A KR20120025148A KR101283571B1 KR 101283571 B1 KR101283571 B1 KR 101283571B1 KR 1020120025148 A KR1020120025148 A KR 1020120025148A KR 20120025148 A KR20120025148 A KR 20120025148A KR 101283571 B1 KR101283571 B1 KR 101283571B1
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KR
South Korea
Prior art keywords
space
inner chamber
chamber
substrate
exhaust
Prior art date
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KR1020120025148A
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English (en)
Korean (ko)
Inventor
채희선
이성욱
Original Assignee
피에스케이 주식회사
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Application filed by 피에스케이 주식회사 filed Critical 피에스케이 주식회사
Priority to KR1020120025148A priority Critical patent/KR101283571B1/ko
Priority to SG2013014402A priority patent/SG193710A1/en
Priority to JP2013046993A priority patent/JP5603962B2/ja
Priority to TW102108522A priority patent/TWI489578B/zh
Priority to CN201310077871.9A priority patent/CN103311158B/zh
Application granted granted Critical
Publication of KR101283571B1 publication Critical patent/KR101283571B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020120025148A 2012-03-12 2012-03-12 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법 KR101283571B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120025148A KR101283571B1 (ko) 2012-03-12 2012-03-12 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법
SG2013014402A SG193710A1 (en) 2012-03-12 2013-02-26 Process treating member, substrate treating apparatus including the member, and substrate treating method using the apparatus
JP2013046993A JP5603962B2 (ja) 2012-03-12 2013-03-08 工程処理部及び基板処理装置、及びこれを利用する基板処理方法
TW102108522A TWI489578B (zh) 2012-03-12 2013-03-11 製程處理部件、包括該部件的基板處理設備，以及使用該設備的基板處理方法
CN201310077871.9A CN103311158B (zh) 2012-03-12 2013-03-12 制程处理部件、基板处理设备以及基板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120025148A KR101283571B1 (ko) 2012-03-12 2012-03-12 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법

Publications (1)

Publication Number Publication Date
KR101283571B1 true KR101283571B1 (ko) 2013-07-08

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Family Applications (1)

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KR1020120025148A KR101283571B1 (ko) 2012-03-12 2012-03-12 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법

Country Status (5)

Country Link
JP (1) JP5603962B2 (ja)
KR (1) KR101283571B1 (ja)
CN (1) CN103311158B (ja)
SG (1) SG193710A1 (ja)
TW (1) TWI489578B (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150043959A (ko) * 2013-10-15 2015-04-23 에스피티에스 테크놀러지스 리미티드 플라즈마 에칭 장치
WO2019140200A1 (en) * 2018-01-15 2019-07-18 Applied Materials, Inc. Advanced temperature monitoring system and methods for semiconductor manufacture productivity
KR20210021779A (ko) * 2019-08-19 2021-03-02 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11004707B1 (en) 2020-01-10 2021-05-11 Picosun Oy Substrate processing apparatus and method
US12013291B2 (en) 2020-10-14 2024-06-18 Applied Materials, Inc. Advanced temperature monitoring system with expandable modular layout design

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101505948B1 (ko) * 2013-12-16 2015-03-26 피에스케이 주식회사 배플 어셈블리 및 이를 가지는 기판 처리 장치
KR102677530B1 (ko) * 2015-10-09 2024-06-20 램 리써치 코포레이션 멀티-포트 밸브 어셈블리들을 가진 플라즈마 프로세싱 디바이스들
KR20170090194A (ko) * 2016-01-28 2017-08-07 삼성전자주식회사 복수 개의 가스 배출관 들 및 가스 센서들을 가진 반도체 소자 제조 설비

Citations (4)

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KR20040048618A (ko) * 2002-12-04 2004-06-10 삼성전자주식회사 원자층 증착 장치
KR100724571B1 (ko) * 2006-02-13 2007-06-04 삼성전자주식회사 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법
JP2009206344A (ja) 2008-02-28 2009-09-10 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
KR20120016513A (ko) * 2010-08-16 2012-02-24 임희찬 반도체 기판용 디스미어 플라즈마 공정챔버

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JPH06124909A (ja) * 1992-10-13 1994-05-06 Tokyo Electron Ltd 縦型熱処理装置
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JP3814813B2 (ja) * 1997-09-01 2006-08-30 株式会社エフオーアイ プラズマ発生装置
US20060005767A1 (en) * 2004-06-28 2006-01-12 Applied Materials, Inc. Chamber component having knurled surface
JP5583413B2 (ja) * 2007-02-28 2014-09-03 アプライド マテリアルズ インコーポレイテッド 大面積基板に堆積するための装置及び方法
JP2009174044A (ja) * 2007-12-27 2009-08-06 Canon Anelva Corp 蒸気供給装置を含む基板処理装置
US20100055298A1 (en) * 2008-08-28 2010-03-04 Applied Materials, Inc. Process kit shields and methods of use thereof
KR20110103723A (ko) * 2010-03-15 2011-09-21 삼성전자주식회사 공정 모니터링 장치와, 이를 이용한 공정 모니터링 방법
JP2012023164A (ja) * 2010-07-14 2012-02-02 Hitachi High-Technologies Corp プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040048618A (ko) * 2002-12-04 2004-06-10 삼성전자주식회사 원자층 증착 장치
KR100724571B1 (ko) * 2006-02-13 2007-06-04 삼성전자주식회사 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법
JP2009206344A (ja) 2008-02-28 2009-09-10 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
KR20120016513A (ko) * 2010-08-16 2012-02-24 임희찬 반도체 기판용 디스미어 플라즈마 공정챔버

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150043959A (ko) * 2013-10-15 2015-04-23 에스피티에스 테크놀러지스 리미티드 플라즈마 에칭 장치
KR102223700B1 (ko) * 2013-10-15 2021-03-04 에스피티에스 테크놀러지스 리미티드 플라즈마 에칭 장치
WO2019140200A1 (en) * 2018-01-15 2019-07-18 Applied Materials, Inc. Advanced temperature monitoring system and methods for semiconductor manufacture productivity
US12068180B2 (en) 2018-01-15 2024-08-20 Applied Materials, Inc. Advanced temperature monitoring system and methods for semiconductor manufacture productivity
KR20210021779A (ko) * 2019-08-19 2021-03-02 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102243242B1 (ko) 2019-08-19 2021-04-22 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11004707B1 (en) 2020-01-10 2021-05-11 Picosun Oy Substrate processing apparatus and method
US12013291B2 (en) 2020-10-14 2024-06-18 Applied Materials, Inc. Advanced temperature monitoring system with expandable modular layout design

Also Published As

Publication number Publication date
TWI489578B (zh) 2015-06-21
TW201338079A (zh) 2013-09-16
JP5603962B2 (ja) 2014-10-08
SG193710A1 (en) 2013-10-30
CN103311158A (zh) 2013-09-18
JP2013191845A (ja) 2013-09-26
CN103311158B (zh) 2016-01-20

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