JP5583413B2 - 大面積基板に堆積するための装置及び方法 - Google Patents
大面積基板に堆積するための装置及び方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 title description 19
- 238000000151 deposition Methods 0.000 title description 16
- 238000012545 processing Methods 0.000 claims description 88
- 238000009616 inductively coupled plasma Methods 0.000 claims description 30
- 238000009826 distribution Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 7
- 230000003993 interaction Effects 0.000 claims description 6
- -1 polytetrafluoroethylene Polymers 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 3
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 57
- 239000006200 vaporizer Substances 0.000 description 27
- 238000005086 pumping Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 16
- 239000012705 liquid precursor Substances 0.000 description 11
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000015654 memory Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000012459 cleaning agent Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
本発明の実施形態は概して、誘導結合プラズマ装置に関する。
フラットパネルディスプレイ(FPD)、薄膜トランジスタ(TFT)及び液晶ディスプレイ(LCD)の作製において、金属配線、ソーラーパネル及びその他の構成は、ガラス基板上への導電材料、半導体材料、誘電体の複数の層の堆積及び除去により形成される。形成された様々な構成はシステムに集積され、のシステムを集合的に使用して、例えば、FPD上の個々の画素において表示状態を電気的に作り出すアクティブマトリックス方式のディスプレイスクリーンを形成する。FPDの作製に用いられる加工技術には、プラズマ化学気相蒸着(PECVD)、物理気相蒸着(PVD)、エッチング等が含まれる。プラズマ処理はフラットパネルディスプレイの製造に特によく適しているが、これは膜を堆積する際の処理温度が比較的低く、得られる膜の質が良好だからである。って、当該分野において、基板上に層を堆積してFPD、TFT、LCD、金属配線、ソーラーパネル及びその他の構成を作製するための装置が必要とされている。
Claims (15)
- 複数のチャンバ壁を有するチャンバ本体と、
基板支持体と、
ガス分散アセンブリと、
複数のチャンバ壁の1つ以上に連結され、非金属材料に封入した金属含有コイルを備える誘導結合プラズマ源であって、封入した金属含有コイルは、外方絶縁材、支持部材、及び真空フィードスルーと境を接するように構成される誘導結合プラズマ源と、
封入した金属含有コイルの内側かつチャンバ処理容積の外側で境を接しており、1つ以上のチャンバ壁に連結される、プラズマ堆積反応との相互作用から又はプラズマ処理若しくはチャンバ洗浄時に発生するイオン若しくは中性原子の衝突から封入した金属含有コイルを保護するための誘電体カバーであって、封入した金属含有コイルと、カバー、外方絶縁材、支持部材、及び真空フィードスルーとの間には空間が無い誘電体カバーを含む装置。 - 非金属材料がポリテトラフルオロエチレンを含む請求項1記載の装置。
- 誘電体カバーがセラミック材料を含む請求項2記載の装置。
- 金属含有コイルは内部に内部路を有する請求項1記載の装置。
- コイルと、
コイルに連結され、コイルを取り囲む封入材料であって、外方絶縁材、支持部材、及び真空フィードスルーと境を接するように構成される封入材料と、
コイルの内側かつチャンバ処理容積の外側で封入材料と接触し、1つ以上のチャンバ壁に連結される、プラズマ堆積反応との相互作用から又はプラズマ処理若しくはチャンバ洗浄時に発生するイオン若しくは中性原子の衝突から封入したコイルを保護するためのカバーであって、封入材料と、カバー、外方絶縁材、支持部材、及び真空フィードスルーとの間には空間が無いカバーを含む誘導結合プラズマ源。 - 封入材料がポリテトラフルオロエチレンを含む請求項5記載の誘導結合プラズマ源。
- カバーがセラミック材料を含む請求項6記載の誘導結合プラズマ源。
- コイルが金属を含む請求項7記載の誘導結合プラズマ源。
- コイルが内部に内部路を有する請求項8記載の誘導結合プラズマ源。
- コイルと、
コイルの上方で封入され、RF電力がアーク放電するのを防ぐコーティングであって、外方絶縁材、支持部材、及び真空フィードスルーと境を接するように構成されるコーティングと、
コーティングの一部の上方かつプラズマ処理容積の外側に配置され、1つ以上のチャンバ壁に連結される、プラズマ堆積反応との相互作用から又はプラズマ処理若しくはチャンバ洗浄時に発生するイオン若しくは中性原子の衝突から封入したコイルを保護するためのカバーであって、コーティングと、カバー、外方絶縁材、支持部材、及び真空フィードスルーとの間には空間が無いカバーを含む誘導結合プラズマ源。 - コーティングがポリテトラフルオロエチレンを含む請求項10記載の誘導結合プラズマ源。
- カバーがセラミック材料を含む請求項11記載の誘導結合プラズマ源。
- コイルが金属を含む請求項12記載の誘導結合プラズマ源。
- コイルが内部に内部路を有する請求項13記載の誘導結合プラズマ源。
- コイルが内部に内部路を有する請求項10記載の誘導結合プラズマ源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89223107P | 2007-02-28 | 2007-02-28 | |
US60/892,231 | 2007-02-28 | ||
PCT/US2008/055174 WO2008106542A1 (en) | 2007-02-28 | 2008-02-27 | Apparatus and method for deposition over large area substrates |
Publications (2)
Publication Number | Publication Date |
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JP2010520955A JP2010520955A (ja) | 2010-06-17 |
JP5583413B2 true JP5583413B2 (ja) | 2014-09-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009551828A Expired - Fee Related JP5583413B2 (ja) | 2007-02-28 | 2008-02-27 | 大面積基板に堆積するための装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080282982A1 (ja) |
JP (1) | JP5583413B2 (ja) |
KR (1) | KR20100014598A (ja) |
CN (1) | CN101642001A (ja) |
TW (2) | TW201419382A (ja) |
WO (1) | WO2008106542A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US20080118663A1 (en) * | 2006-10-12 | 2008-05-22 | Applied Materials, Inc. | Contamination reducing liner for inductively coupled chamber |
TWI349720B (en) * | 2007-05-30 | 2011-10-01 | Ind Tech Res Inst | A power-delivery mechanism and apparatus of plasma-enhanced chemical vapor deposition using the same |
KR20090044285A (ko) * | 2007-10-31 | 2009-05-07 | 삼성전자주식회사 | Ald 설비 및 그 ald 설비의 세정방법 |
US20100059182A1 (en) * | 2008-09-05 | 2010-03-11 | Jusung Engineering Co., Ltd. | Substrate processing apparatus |
JP5837793B2 (ja) * | 2010-11-30 | 2015-12-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理装置のバッフル構造 |
KR101283571B1 (ko) * | 2012-03-12 | 2013-07-08 | 피에스케이 주식회사 | 공정 처리부 및 기판 처리 장치, 그리고 이를 이용한 기판 처리 방법 |
US20150020974A1 (en) * | 2013-07-19 | 2015-01-22 | Psk Inc. | Baffle and apparatus for treating surface of baffle, and substrate treating apparatus |
WO2015116244A1 (en) | 2014-01-30 | 2015-08-06 | Applied Materials, Inc. | Corner spoiler for improving profile uniformity |
JP6446418B2 (ja) * | 2016-09-13 | 2018-12-26 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
KR101992337B1 (ko) | 2017-05-22 | 2019-06-25 | 조현일 | 대면적 기판 박막코팅장치 |
US20210183620A1 (en) * | 2019-12-13 | 2021-06-17 | Applied Materials, Inc. | Chamber with inductive power source |
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US3731047A (en) * | 1971-12-06 | 1973-05-01 | Mc Donnell Douglas Corp | Plasma heating torch |
US5556501A (en) * | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
JP3424867B2 (ja) * | 1994-12-06 | 2003-07-07 | 富士通株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP3720901B2 (ja) * | 1996-03-04 | 2005-11-30 | アネルバ株式会社 | プラズマ処理装置及びアンテナの製造方法 |
US6308654B1 (en) * | 1996-10-18 | 2001-10-30 | Applied Materials, Inc. | Inductively coupled parallel-plate plasma reactor with a conical dome |
JPH10149896A (ja) * | 1996-11-19 | 1998-06-02 | Kokusai Electric Co Ltd | プラズマ処理装置 |
US5800621A (en) * | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
US6331754B1 (en) * | 1999-05-13 | 2001-12-18 | Tokyo Electron Limited | Inductively-coupled-plasma-processing apparatus |
JP3408994B2 (ja) * | 1999-05-24 | 2003-05-19 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理装置の制御方法 |
JP2001011638A (ja) * | 1999-06-23 | 2001-01-16 | Jeol Ltd | 高周波誘導熱プラズマ装置 |
US6417626B1 (en) * | 2001-03-01 | 2002-07-09 | Tokyo Electron Limited | Immersed inductively—coupled plasma source |
US6652711B2 (en) * | 2001-06-06 | 2003-11-25 | Tokyo Electron Limited | Inductively-coupled plasma processing system |
JP4064315B2 (ja) * | 2003-08-20 | 2008-03-19 | 信越化学工業株式会社 | 誘導結合プラズマトーチ及び元素分析装置 |
US20050178333A1 (en) * | 2004-02-18 | 2005-08-18 | Asm Japan K.K. | System and method of CVD chamber cleaning |
US20060105114A1 (en) * | 2004-11-16 | 2006-05-18 | White John M | Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs |
JP2006278219A (ja) * | 2005-03-30 | 2006-10-12 | Utec:Kk | Icp回路、プラズマ処理装置及びプラズマ処理方法 |
-
2008
- 2008-02-27 WO PCT/US2008/055174 patent/WO2008106542A1/en active Application Filing
- 2008-02-27 JP JP2009551828A patent/JP5583413B2/ja not_active Expired - Fee Related
- 2008-02-27 KR KR1020097020106A patent/KR20100014598A/ko not_active Application Discontinuation
- 2008-02-27 CN CN200880007914A patent/CN101642001A/zh active Pending
- 2008-02-28 US US12/039,613 patent/US20080282982A1/en not_active Abandoned
- 2008-02-29 TW TW102149342A patent/TW201419382A/zh unknown
- 2008-02-29 TW TW097107171A patent/TW200849336A/zh unknown
Also Published As
Publication number | Publication date |
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US20080282982A1 (en) | 2008-11-20 |
JP2010520955A (ja) | 2010-06-17 |
WO2008106542B1 (en) | 2008-10-16 |
WO2008106542A1 (en) | 2008-09-04 |
CN101642001A (zh) | 2010-02-03 |
KR20100014598A (ko) | 2010-02-10 |
TW200849336A (en) | 2008-12-16 |
TW201419382A (zh) | 2014-05-16 |
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