KR101268424B1 - 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법 - Google Patents

포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법 Download PDF

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Publication number
KR101268424B1
KR101268424B1 KR1020050102942A KR20050102942A KR101268424B1 KR 101268424 B1 KR101268424 B1 KR 101268424B1 KR 1020050102942 A KR1020050102942 A KR 1020050102942A KR 20050102942 A KR20050102942 A KR 20050102942A KR 101268424 B1 KR101268424 B1 KR 101268424B1
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South Korea
Prior art keywords
photoresist
weight
resin
photoresist composition
thin film
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KR1020050102942A
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English (en)
Korean (ko)
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KR20070046346A (ko
Inventor
이희국
전우석
정두희
박정민
강덕만
정시영
최재영
Original Assignee
에이지이엠코리아 주식회사
삼성디스플레이 주식회사
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Priority to KR1020050102942A priority Critical patent/KR101268424B1/ko
Priority to JP2006286899A priority patent/JP4860428B2/ja
Priority to TW095140045A priority patent/TWI410746B/zh
Priority to US11/554,194 priority patent/US7955784B2/en
Publication of KR20070046346A publication Critical patent/KR20070046346A/ko
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Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리지분의 전부이전등록 Assignors: 머크일렉트로닉머티리얼즈 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020050102942A 2005-10-31 2005-10-31 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법 Expired - Lifetime KR101268424B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050102942A KR101268424B1 (ko) 2005-10-31 2005-10-31 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
JP2006286899A JP4860428B2 (ja) 2005-10-31 2006-10-20 フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法
TW095140045A TWI410746B (zh) 2005-10-31 2006-10-30 光阻組合物及使用彼製造薄膜電晶體基材之方法
US11/554,194 US7955784B2 (en) 2005-10-31 2006-10-30 Photoresist composition and method of manufacturing a thin-film transistor substrate using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050102942A KR101268424B1 (ko) 2005-10-31 2005-10-31 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법

Publications (2)

Publication Number Publication Date
KR20070046346A KR20070046346A (ko) 2007-05-03
KR101268424B1 true KR101268424B1 (ko) 2013-05-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050102942A Expired - Lifetime KR101268424B1 (ko) 2005-10-31 2005-10-31 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법

Country Status (4)

Country Link
US (1) US7955784B2 (https=)
JP (1) JP4860428B2 (https=)
KR (1) KR101268424B1 (https=)
TW (1) TWI410746B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240095596A (ko) * 2022-12-16 2024-06-26 (재)한국나노기술원 고출력 발광소자의 제조방법 및 그에 의해 제조된 고출력 발광소자

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103091987B (zh) * 2008-12-26 2016-11-23 日立化成株式会社 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件
KR20110045418A (ko) * 2009-10-27 2011-05-04 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
TWI485521B (zh) * 2010-06-28 2015-05-21 Everlight Chem Ind Corp 正型感光樹脂組成物
JP6217230B2 (ja) * 2013-08-19 2017-10-25 Jsr株式会社 感光性樹脂組成物および樹脂組成物、ならびに樹脂膜の製造方法
KR102219109B1 (ko) 2014-01-22 2021-02-24 삼성디스플레이 주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성 방법 및 박막 트랜지스터 기판의 제조 방법
KR102756671B1 (ko) * 2019-02-21 2025-01-17 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000250210A (ja) * 1999-03-04 2000-09-14 Jsr Corp 感光性樹脂組成物、感光性樹脂膜およびこれを用いたバンプ形成方法
JP2004219536A (ja) * 2003-01-10 2004-08-05 Hitachi Chem Co Ltd 感光性樹脂組成物、回路形成用基板、レジストパターンの製造法、プリント配線板の製造法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08248631A (ja) * 1995-01-12 1996-09-27 Fuji Photo Film Co Ltd 感光性平版印刷版
JP3347530B2 (ja) * 1995-06-27 2002-11-20 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3615981B2 (ja) 1999-11-24 2005-02-02 クラリアント インターナショナル リミテッド 感光性樹脂組成物
JP3710717B2 (ja) * 2001-03-06 2005-10-26 東京応化工業株式会社 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法
JP4156400B2 (ja) * 2003-02-24 2008-09-24 東京応化工業株式会社 ポジ型ホトレジスト組成物及びレジストパターンの形成方法
JP2005037712A (ja) * 2003-07-15 2005-02-10 Hitachi Chem Co Ltd パターン化されたレジスト膜の製造方法、レジスト膜形成済回路形成用基板、及びプリント配線板の製造方法
CN100573833C (zh) * 2004-03-25 2009-12-23 株式会社半导体能源研究所 用于制造薄膜晶体管的方法
EP1624333B1 (en) * 2004-08-03 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method thereof, and television set
KR101050619B1 (ko) * 2005-02-18 2011-07-19 삼성전자주식회사 포토레지스트용 노르보넨 중합체 및 그를 포함하는 포토레지스트 조성물
KR101240643B1 (ko) * 2005-07-08 2013-03-08 삼성디스플레이 주식회사 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000250210A (ja) * 1999-03-04 2000-09-14 Jsr Corp 感光性樹脂組成物、感光性樹脂膜およびこれを用いたバンプ形成方法
JP2004219536A (ja) * 2003-01-10 2004-08-05 Hitachi Chem Co Ltd 感光性樹脂組成物、回路形成用基板、レジストパターンの製造法、プリント配線板の製造法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240095596A (ko) * 2022-12-16 2024-06-26 (재)한국나노기술원 고출력 발광소자의 제조방법 및 그에 의해 제조된 고출력 발광소자
KR102854252B1 (ko) 2022-12-16 2025-09-04 (재)한국나노기술원 고출력 발광소자의 제조방법 및 그에 의해 제조된 고출력 발광소자

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Publication number Publication date
JP2007128067A (ja) 2007-05-24
KR20070046346A (ko) 2007-05-03
TW200722914A (en) 2007-06-16
US20070259272A1 (en) 2007-11-08
US7955784B2 (en) 2011-06-07
JP4860428B2 (ja) 2012-01-25
TWI410746B (zh) 2013-10-01

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