JP2007128067A - フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法 - Google Patents
フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法 Download PDFInfo
- Publication number
- JP2007128067A JP2007128067A JP2006286899A JP2006286899A JP2007128067A JP 2007128067 A JP2007128067 A JP 2007128067A JP 2006286899 A JP2006286899 A JP 2006286899A JP 2006286899 A JP2006286899 A JP 2006286899A JP 2007128067 A JP2007128067 A JP 2007128067A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist composition
- weight
- photoresist
- resin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 138
- 239000000203 mixture Substances 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 65
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 35
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 25
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 25
- 229920003986 novolac Polymers 0.000 claims abstract description 22
- 150000002148 esters Chemical class 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 15
- 229930192627 Naphthoquinone Natural products 0.000 claims description 12
- 150000002791 naphthoquinones Chemical class 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 2
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 claims description 2
- 235000019445 benzyl alcohol Nutrition 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 claims description 2
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 42
- 230000008569 process Effects 0.000 abstract description 37
- 230000007261 regionalization Effects 0.000 abstract description 2
- 238000003860 storage Methods 0.000 description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- -1 2,3,4-tetrahydroxybenzophenone ester Chemical class 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical class CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- FVXNLWRKEVZHKO-UHFFFAOYSA-N 1-chlorohexan-2-one Chemical compound CCCCC(=O)CCl FVXNLWRKEVZHKO-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VWRUXXHWUZUAMT-UHFFFAOYSA-N C1=CC(O)(O)C(O)C(O)=C1C(=O)C1=CC=CC=C1 Chemical compound C1=CC(O)(O)C(O)C(O)=C1C(=O)C1=CC=CC=C1 VWRUXXHWUZUAMT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000006166 lysate Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229940100630 metacresol Drugs 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- DKJCSMHIPYRALV-UHFFFAOYSA-N methoxymethyl propanoate Chemical compound CCC(=O)OCOC DKJCSMHIPYRALV-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000031070 response to heat Effects 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
【課題】 本発明はフォトレジスト組成物及び前記フォトレジスト組成物を用いた薄膜トランジスタ基板の製造方法を提供する。
【解決手段】フォトレジスト組成物はノボラック樹脂及びアクリル樹脂を含む混合樹脂100重量部及びナフトキノンジアゾスルホン酸エステル10〜50重量部を含む。前記ノボラック樹脂の重量平均分子量は30000以上であり前記アクリル樹脂の重量平均分子量は20000以上である。前記アクリル樹脂の含量は全体混合樹脂の1〜15重量%である。前記フォトレジスト組成物は薄膜トランジスタ基板の製造工程のパターン形成の際、リフローによるプロファイルの角度変化を最小化し、パターンの構造の安定性及び残膜厚さ均一性を向上させることで配線のショート及びオープン不良を減少させることができる。
【選択図】 図6
Description
前記フォトレジスト組成物はポジ型フォトレジスト組成物として高耐熱性を有する。前記フォトレジスト組成物は混合樹脂100重量部及びナフトキノンジアゾスルホン酸エステル10〜50重量部を含む。
メタクレゾール及びパラクレゾールを60:40の重量比で混合された混合物及びホルマリンの混合物を凝縮触媒としてシュウ酸を使用して重合させたノボラック樹脂を準備した。前記ノボラック樹脂の重量平均分子量は約38000であった。続いて、重量平均分子量が約28000であるアクリル樹脂を準備して前記ノボラック樹脂と混合させた。前記アクリル樹脂は前記混合樹脂全体重量に対して10重量%を占めるように混合された。続いて、前記混合樹脂100重量部に対して、1,2−ジアゾ−5−スルホン酸の2,3,44−テトラヒドロキシベンゾフェノンエステル20重量部を混合し前記混合物を200重量部のプロピレングリコールモノメチルエテールアセテートとベンジルアルコールの混合溶媒に溶解させた。前記溶解物を直径0.2μmの濾過膜を介して濾過させ最終産物であるフォトレジスト組成物が得られた。
混合樹脂の代わりに重量平均分子量約12000であるノボラック樹脂100重量部を使用したのを除いては前記実施例1と同一の方法のフォトレジスト組成物を準備した。
混合樹脂の代わりに重量平均分子量約27000であるノボラック樹脂100重量部を使用したのを除いては前記実施例1と同一の方法のフォトレジスト組成物を準備した。
前記実施例1及び比較例1〜2で準備したフォトレジスト組成物を用いてパターンを形成し、残留フォトレジストの厚さ偏差、プロファイルスキューを評価した。前記プロファイルは熱処理前の傾斜度B、熱処理130、135後の傾斜度C、Dを測定することで評価された。スキューは第1エッチング後のスキューE及び最終スキューF(第1エッチング+アクティブエッチング+エッチバック後のスキュー)をそれぞれ測定した。評価結果は下記表1に示した。
まず、図14乃至図16を参照して本発明の一実施例による薄膜トランジスタ基板及びその製造方法について詳細に説明する。
81、82 コンタクト補助部材
83 連結橋
110 絶縁基板
120 ゲート層
121 ゲート線
124 ゲート電極
131 蓄積電極線
133a、133b 蓄積電極
140 ゲート絶縁膜
154 半導体層
160 不純物アモルファスシリコン層
171 データ線
173 ソース電極
175 ドレイン電極
180 保護膜
191 画素電極
Claims (11)
- ノボラック樹脂及びアクリル樹脂を含む混合樹脂100重量部と、
ナフトキノンジアゾスルホン酸エステル10〜50重量部と、
を含むことを特徴とする高耐熱性フォトレジスト組成物。 - 前記ノボラック樹脂の重量平均分子量が30000以上であることを特徴とする請求項1記載の高耐熱性フォトレジスト組成物。
- 前記アクリル樹脂は、メチルメタクリレート、エチルメタクリレート、メタクリル酸、スチレン、ベンジルメタクリレート、及びアクリル酸からなる群のうち選択される少なくとも2つ以上の化合物の共重合体であることを特徴とする請求項1記載の高耐熱性フォトレジスト組成物。
- 前記アクリル樹脂の重量平均分子量が20000以上であることを特徴とする請求項3記載の高耐熱性フォトレジスト組成物。
- 前記アクリル樹脂の含量は、全体混合樹脂の1〜15重量%であることを特徴とする請求項4記載の高耐熱性フォトレジスト組成物。
- 前記フォトレジスト組成物は、有機溶剤をさらに含むことを特徴とする請求項1記載の高耐熱性フォトレジスト組成物。
- 前記有機溶剤は、プロピレングリコール、モノメチルエテールアセテート及びベンジルアルコールを含むことを特徴とする請求項6記載の高耐熱性フォトレジスト組成物。
- 基板上にゲート線を形成し、
前記ゲート線上にゲート絶縁膜、半導体層及びデータ層を順次に形成し、
前記データ層上にノボラック樹脂及びアクリル樹脂を含む混合樹脂100重量部、及びナフトキノンジアゾスルホン酸エステル10〜50重量部を含むフォトレジスト組成物を塗布してフォトレジスト膜を形成し、
前記フォトレジスト膜をパターニングしてフォトレジストパターンを形成し、
前記フォトレジストパターンを用いて前記データ層を1次エッチングし、
前記1次エッチングされたデータ層をマスクとして半導体層をエッチングし、
前記フォトレジストパターンを熱処理してリフローし、
前記リフローされたフォトレジストパターンを用いて前記データ層を2次エッチングすることを特徴とする薄膜トランジスタ基板の製造方法。 - 前記ノボラック樹脂の重量平均分子量が30000以上であることを特徴とする請求項8記載の薄膜トランジスタ基板の製造方法。
- 前記アクリル樹脂の重量平均分子量が20000以上であることを特徴とする請求項8記載の薄膜トランジスタ基板の製造方法。
- 前記アクリル樹脂の含量は全体混合樹脂の1〜15重量%であることを特徴とする請求項10記載の薄膜トランジスタ基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0102942 | 2005-10-31 | ||
KR1020050102942A KR101268424B1 (ko) | 2005-10-31 | 2005-10-31 | 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007128067A true JP2007128067A (ja) | 2007-05-24 |
JP2007128067A5 JP2007128067A5 (ja) | 2009-06-25 |
JP4860428B2 JP4860428B2 (ja) | 2012-01-25 |
Family
ID=38150729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006286899A Active JP4860428B2 (ja) | 2005-10-31 | 2006-10-20 | フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7955784B2 (ja) |
JP (1) | JP4860428B2 (ja) |
KR (1) | KR101268424B1 (ja) |
TW (1) | TWI410746B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010073948A1 (ja) * | 2008-12-26 | 2010-07-01 | 日立化成工業株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス |
JP2011095746A (ja) * | 2009-10-27 | 2011-05-12 | Samsung Electronics Co Ltd | フォトレジスト組成物およびこれを用いた表示基板の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI485521B (zh) * | 2010-06-28 | 2015-05-21 | Everlight Chem Ind Corp | 正型感光樹脂組成物 |
JP6217230B2 (ja) * | 2013-08-19 | 2017-10-25 | Jsr株式会社 | 感光性樹脂組成物および樹脂組成物、ならびに樹脂膜の製造方法 |
KR102219109B1 (ko) | 2014-01-22 | 2021-02-24 | 삼성디스플레이 주식회사 | 포토레지스트 조성물, 이를 이용한 패턴의 형성 방법 및 박막 트랜지스터 기판의 제조 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08248631A (ja) * | 1995-01-12 | 1996-09-27 | Fuji Photo Film Co Ltd | 感光性平版印刷版 |
JPH0915862A (ja) * | 1995-06-27 | 1997-01-17 | Fujitsu Ltd | レジスト組成物及びレジストパターンの形成方法 |
JP2000250210A (ja) * | 1999-03-04 | 2000-09-14 | Jsr Corp | 感光性樹脂組成物、感光性樹脂膜およびこれを用いたバンプ形成方法 |
JP2002258479A (ja) * | 2001-03-06 | 2002-09-11 | Tokyo Ohka Kogyo Co Ltd | 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法 |
JP2004219536A (ja) * | 2003-01-10 | 2004-08-05 | Hitachi Chem Co Ltd | 感光性樹脂組成物、回路形成用基板、レジストパターンの製造法、プリント配線板の製造法 |
JP2004258099A (ja) * | 2003-02-24 | 2004-09-16 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
JP2005037712A (ja) * | 2003-07-15 | 2005-02-10 | Hitachi Chem Co Ltd | パターン化されたレジスト膜の製造方法、レジスト膜形成済回路形成用基板、及びプリント配線板の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3615981B2 (ja) | 1999-11-24 | 2005-02-02 | クラリアント インターナショナル リミテッド | 感光性樹脂組成物 |
US7476572B2 (en) * | 2004-03-25 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor |
EP1624333B1 (en) * | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
KR101050619B1 (ko) * | 2005-02-18 | 2011-07-19 | 삼성전자주식회사 | 포토레지스트용 노르보넨 중합체 및 그를 포함하는 포토레지스트 조성물 |
KR101240643B1 (ko) * | 2005-07-08 | 2013-03-08 | 삼성디스플레이 주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 |
-
2005
- 2005-10-31 KR KR1020050102942A patent/KR101268424B1/ko active IP Right Grant
-
2006
- 2006-10-20 JP JP2006286899A patent/JP4860428B2/ja active Active
- 2006-10-30 US US11/554,194 patent/US7955784B2/en active Active
- 2006-10-30 TW TW095140045A patent/TWI410746B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08248631A (ja) * | 1995-01-12 | 1996-09-27 | Fuji Photo Film Co Ltd | 感光性平版印刷版 |
JPH0915862A (ja) * | 1995-06-27 | 1997-01-17 | Fujitsu Ltd | レジスト組成物及びレジストパターンの形成方法 |
JP2000250210A (ja) * | 1999-03-04 | 2000-09-14 | Jsr Corp | 感光性樹脂組成物、感光性樹脂膜およびこれを用いたバンプ形成方法 |
JP2002258479A (ja) * | 2001-03-06 | 2002-09-11 | Tokyo Ohka Kogyo Co Ltd | 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法 |
JP2004219536A (ja) * | 2003-01-10 | 2004-08-05 | Hitachi Chem Co Ltd | 感光性樹脂組成物、回路形成用基板、レジストパターンの製造法、プリント配線板の製造法 |
JP2004258099A (ja) * | 2003-02-24 | 2004-09-16 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
JP2005037712A (ja) * | 2003-07-15 | 2005-02-10 | Hitachi Chem Co Ltd | パターン化されたレジスト膜の製造方法、レジスト膜形成済回路形成用基板、及びプリント配線板の製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010073948A1 (ja) * | 2008-12-26 | 2010-07-01 | 日立化成工業株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス |
CN102257431A (zh) * | 2008-12-26 | 2011-11-23 | 日立化成工业株式会社 | 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件 |
JP2013015856A (ja) * | 2008-12-26 | 2013-01-24 | Hitachi Chem Co Ltd | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス |
JP5158212B2 (ja) * | 2008-12-26 | 2013-03-06 | 日立化成株式会社 | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス |
CN103091987A (zh) * | 2008-12-26 | 2013-05-08 | 日立化成工业株式会社 | 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件 |
US8461699B2 (en) | 2008-12-26 | 2013-06-11 | Hitachi Chemical Company, Ltd. | Positive-type photosensitive resin composition, method for producing resist pattern, semiconductor device, and electronic device |
CN103091987B (zh) * | 2008-12-26 | 2016-11-23 | 日立化成株式会社 | 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件 |
JP2011095746A (ja) * | 2009-10-27 | 2011-05-12 | Samsung Electronics Co Ltd | フォトレジスト組成物およびこれを用いた表示基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4860428B2 (ja) | 2012-01-25 |
KR101268424B1 (ko) | 2013-05-28 |
US7955784B2 (en) | 2011-06-07 |
US20070259272A1 (en) | 2007-11-08 |
TWI410746B (zh) | 2013-10-01 |
KR20070046346A (ko) | 2007-05-03 |
TW200722914A (en) | 2007-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101240643B1 (ko) | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 | |
US7537974B2 (en) | Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same | |
JP4860428B2 (ja) | フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法 | |
KR20090109432A (ko) | 감광성 수지, 상기 감광성 수지를 사용한 패턴의 형성 방법및 표시판의 제조 방법 | |
JP2008242247A (ja) | 2層積層膜およびこれを用いたパターン形成方法 | |
US20110269309A1 (en) | Photoresist composition, method of forming pattern by using the photoresist composition, and method of manufacturing thin-film transistor substrate | |
JP2008158007A (ja) | 2層積層膜およびこれを用いたパターン形成方法 | |
US20070111412A1 (en) | Thin film transistor array panel and method of manufacturing the same | |
TWI465842B (zh) | 光阻組成物以及使用該組成物製造陣列基材之方法 | |
KR101632965B1 (ko) | 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법 | |
JP5635780B2 (ja) | 薄膜トランジスタ表示板の製造方法およびこれに使用されるネガティブフォトレジスト組成物 | |
US20120052438A1 (en) | Photoresist composition and method of forming pattern using the same | |
KR101737798B1 (ko) | 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법 | |
US8652749B2 (en) | Photoresist composition and method of forming pattern by using the same | |
KR20120073988A (ko) | 박막 트랜지스터 표시판의 제조 방법 및 이에 사용되는 포토레지스트 조성물 | |
US20160085150A1 (en) | Photoresist composition and method of manufacturing circuit pattern using the same | |
KR101316726B1 (ko) | 감광성 수지 조성물 및 이를 사용한 표시판의 제조 방법 | |
KR20070066445A (ko) | 표시 기판의 제조방법 | |
KR101661695B1 (ko) | 박막 트랜지스터 표시판의 제조 방법 및 이에 사용되는 포토레지스트 조성물 | |
KR20070063372A (ko) | 박막 트랜지스터 표시판의 제조 방법 | |
KR20060070354A (ko) | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법 | |
KR20070060290A (ko) | 표시기판의 제조방법 및 이를 이용한 액정표시장치의제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090507 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100408 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110419 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110426 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110725 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111004 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111102 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4860428 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141111 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141111 Year of fee payment: 3 |
|
R154 | Certificate of patent or utility model (reissue) |
Free format text: JAPANESE INTERMEDIATE CODE: R154 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141111 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141111 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141111 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |