KR101265081B1 - 노광용 척 및 이를 이용한 액정표시소자의 제조방법 - Google Patents
노광용 척 및 이를 이용한 액정표시소자의 제조방법 Download PDFInfo
- Publication number
- KR101265081B1 KR101265081B1 KR1020040050813A KR20040050813A KR101265081B1 KR 101265081 B1 KR101265081 B1 KR 101265081B1 KR 1020040050813 A KR1020040050813 A KR 1020040050813A KR 20040050813 A KR20040050813 A KR 20040050813A KR 101265081 B1 KR101265081 B1 KR 101265081B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- lift bar
- chuck
- liquid crystal
- exposure
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title description 35
- 238000000034 method Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 239000010408 film Substances 0.000 description 23
- 230000005684 electric field Effects 0.000 description 17
- 238000009826 distribution Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mathematical Physics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (9)
- 일자(-) 또는 격자형태로 이루어지고, 기판을 이송하기 위한 리프트바(lift-bar);상기 리프트바와 동일한 형태로 이루어지고, 상기 기판이 로딩된 리프트바를 안착시키기 위한 리프트바안착부; 및리프트바가 리프트바안착부에 진입하여 기판이 리프트바로부터 분리됨에 따라 기판을 지지하며, 상기 기판과 접촉하는 접촉부 및 일정한 깊이의 홈이 형성된 비접촉부로 구성되는 기판로딩부를 포함하고,상기 기판과 접촉하는 리프트바의 표면이 상기 기판을 통해 투과된 광을 난반사시키는 요철을 가지며,상기 요철은 볼록부의 폭이 1mm 이하, 오목부의 폭이 상기 볼록부의 폭의 5배 이하인 것을 특징으로 하는 노광용 척.
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040050813A KR101265081B1 (ko) | 2004-06-30 | 2004-06-30 | 노광용 척 및 이를 이용한 액정표시소자의 제조방법 |
TW094121160A TWI278956B (en) | 2004-06-30 | 2005-06-24 | Exposure chuck and method for fabricating liquid crystal display device using the same |
US11/167,603 US7929107B2 (en) | 2004-06-30 | 2005-06-28 | Exposure chuck comprising a surface of a lift bar having a concavo-convex structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040050813A KR101265081B1 (ko) | 2004-06-30 | 2004-06-30 | 노광용 척 및 이를 이용한 액정표시소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060001660A KR20060001660A (ko) | 2006-01-06 |
KR101265081B1 true KR101265081B1 (ko) | 2013-05-16 |
Family
ID=35656166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040050813A KR101265081B1 (ko) | 2004-06-30 | 2004-06-30 | 노광용 척 및 이를 이용한 액정표시소자의 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7929107B2 (ko) |
KR (1) | KR101265081B1 (ko) |
TW (1) | TWI278956B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101255763B1 (ko) * | 2007-02-27 | 2013-04-17 | 주성엔지니어링(주) | 기판 처리 방법 |
CN104298081B (zh) * | 2014-11-05 | 2016-07-06 | 京东方科技集团股份有限公司 | 一种曝光机 |
CN105045048B (zh) * | 2015-09-16 | 2017-05-03 | 京东方科技集团股份有限公司 | 一种曝光基台和曝光设备 |
US10490436B2 (en) | 2015-11-04 | 2019-11-26 | Applied Materials, Inc. | Enhanced lift pin design to eliminate local thickness non-uniformity in teos oxide films |
CN106773553B (zh) * | 2017-03-06 | 2018-11-30 | 重庆京东方光电科技有限公司 | 承载装置和曝光设备 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001222017A (ja) * | 1999-05-24 | 2001-08-17 | Fujitsu Ltd | 液晶表示装置及びその製造方法 |
US7270587B2 (en) * | 2002-03-05 | 2007-09-18 | Lg.Philips Lcd Co., Ltd. | Apparatus and method for manufacturing liquid crystal display devices, method for using the apparatus, and device produced by the method |
US7295279B2 (en) * | 2002-06-28 | 2007-11-13 | Lg.Philips Lcd Co., Ltd. | System and method for manufacturing liquid crystal display devices |
US7092231B2 (en) * | 2002-08-23 | 2006-08-15 | Asml Netherlands B.V. | Chuck, lithographic apparatus and device manufacturing method |
-
2004
- 2004-06-30 KR KR1020040050813A patent/KR101265081B1/ko active IP Right Grant
-
2005
- 2005-06-24 TW TW094121160A patent/TWI278956B/zh not_active IP Right Cessation
- 2005-06-28 US US11/167,603 patent/US7929107B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7929107B2 (en) | 2011-04-19 |
KR20060001660A (ko) | 2006-01-06 |
US20060017005A1 (en) | 2006-01-26 |
TWI278956B (en) | 2007-04-11 |
TW200603330A (en) | 2006-01-16 |
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