KR101240279B1 - 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법 - Google Patents

마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법 Download PDF

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KR101240279B1
KR101240279B1 KR1020090072454A KR20090072454A KR101240279B1 KR 101240279 B1 KR101240279 B1 KR 101240279B1 KR 1020090072454 A KR1020090072454 A KR 1020090072454A KR 20090072454 A KR20090072454 A KR 20090072454A KR 101240279 B1 KR101240279 B1 KR 101240279B1
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South Korea
Prior art keywords
substrate
main surface
mask blank
photomask
mask
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KR1020090072454A
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Korean (ko)
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KR20100019373A (ko
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타나베 마사루
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호야 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090072454A 2008-08-07 2009-08-06 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법 Active KR101240279B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-204164 2008-08-07
JP2008204164A JP5222660B2 (ja) 2008-08-07 2008-08-07 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110049063A Division KR20110074835A (ko) 2008-08-07 2011-05-24 마스크블랭크용 기판, 마스크블랭크, 포토마스크 및 반도체 디바이스 그리고 그것들의 제조방법

Publications (2)

Publication Number Publication Date
KR20100019373A KR20100019373A (ko) 2010-02-18
KR101240279B1 true KR101240279B1 (ko) 2013-03-07

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KR1020090072454A Active KR101240279B1 (ko) 2008-08-07 2009-08-06 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법
KR1020110049063A Ceased KR20110074835A (ko) 2008-08-07 2011-05-24 마스크블랭크용 기판, 마스크블랭크, 포토마스크 및 반도체 디바이스 그리고 그것들의 제조방법

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KR1020110049063A Ceased KR20110074835A (ko) 2008-08-07 2011-05-24 마스크블랭크용 기판, 마스크블랭크, 포토마스크 및 반도체 디바이스 그리고 그것들의 제조방법

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Country Link
US (2) US8048593B2 (https=)
JP (1) JP5222660B2 (https=)
KR (2) KR101240279B1 (https=)
DE (1) DE102009036618B4 (https=)
TW (2) TWI461840B (https=)

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JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP4971278B2 (ja) * 2008-09-25 2012-07-11 信越化学工業株式会社 フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法
JP5231918B2 (ja) 2008-09-26 2013-07-10 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、及び両面研磨装置
JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法
SG184104A1 (en) * 2010-03-16 2012-10-30 Asahi Glass Co Ltd Optical member base material for euv lithography, and method for producing same
JP5637062B2 (ja) * 2010-05-24 2014-12-10 信越化学工業株式会社 合成石英ガラス基板及びその製造方法
CN101923292B (zh) * 2010-08-03 2012-10-17 深圳市路维电子有限公司 光罩边缘铬残留去除方法
JP5858623B2 (ja) * 2011-02-10 2016-02-10 信越化学工業株式会社 金型用基板
KR101343292B1 (ko) * 2011-04-12 2013-12-18 호야 가부시키가이샤 포토마스크용 기판, 포토마스크 및 패턴 전사 방법
JP6055732B2 (ja) * 2013-07-26 2016-12-27 Hoya株式会社 マスクブランク用基板、マスクブランク、およびそれらの製造方法、並びにインプリントモールドの製造方法
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
WO2015046303A1 (ja) * 2013-09-27 2015-04-02 Hoya株式会社 多層反射膜付き基板、マスクブランク、転写用マスク及び半導体装置の製造方法
JP6094708B1 (ja) * 2015-09-28 2017-03-15 旭硝子株式会社 マスクブランク
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
WO2018003603A1 (ja) * 2016-06-28 2018-01-04 三井化学株式会社 ペリクル膜、ペリクル枠体、ペリクル、及びその製造方法
JP6293986B1 (ja) 2016-07-27 2018-03-14 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、半導体デバイスの製造方法、マスクブランク用基板、マスクブランク及び転写用マスク
JP6862859B2 (ja) * 2017-01-30 2021-04-21 Ａｇｃ株式会社 マスクブランク用のガラス基板、マスクブランクおよびフォトマスク

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KR20060051685A (ko) * 2004-09-29 2006-05-19 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크, 노광용 마스크,마스크 블랭크용 기판의 제조방법 및 반도체 제조방법
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KR20050012687A (ko) * 2003-07-25 2005-02-02 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크용 기판의 선정방법
KR20060051685A (ko) * 2004-09-29 2006-05-19 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크, 노광용 마스크,마스크 블랭크용 기판의 제조방법 및 반도체 제조방법
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Also Published As

Publication number Publication date
US20120015286A1 (en) 2012-01-19
KR20110074835A (ko) 2011-07-04
TWI461840B (zh) 2014-11-21
US8440373B2 (en) 2013-05-14
US20100035028A1 (en) 2010-02-11
TW201007349A (en) 2010-02-16
JP2010039352A (ja) 2010-02-18
DE102009036618B4 (de) 2016-08-04
DE102009036618A1 (de) 2010-03-25
KR20100019373A (ko) 2010-02-18
US8048593B2 (en) 2011-11-01
TWI402615B (zh) 2013-07-21
JP5222660B2 (ja) 2013-06-26
TW201341946A (zh) 2013-10-16

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