KR101208136B1 - 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정: 플럭스 재료 - Google Patents

반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정: 플럭스 재료 Download PDF

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KR101208136B1
KR101208136B1 KR1020107010745A KR20107010745A KR101208136B1 KR 101208136 B1 KR101208136 B1 KR 101208136B1 KR 1020107010745 A KR1020107010745 A KR 1020107010745A KR 20107010745 A KR20107010745 A KR 20107010745A KR 101208136 B1 KR101208136 B1 KR 101208136B1
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South Korea
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composition
thick film
glass
silver
insulating film
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Korean (ko)
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KR20100080611A (ko
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알란 프레데릭 캐롤
케네스 워렌 행
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이 아이 듀폰 디 네모아 앤드 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
KR1020107010745A 2007-10-18 2008-10-20 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정: 플럭스 재료 Expired - Fee Related KR101208136B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98091007P 2007-10-18 2007-10-18
US60/980,910 2007-10-18

Publications (2)

Publication Number Publication Date
KR20100080611A KR20100080611A (ko) 2010-07-09
KR101208136B1 true KR101208136B1 (ko) 2012-12-04

Family

ID=40279022

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107010745A Expired - Fee Related KR101208136B1 (ko) 2007-10-18 2008-10-20 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정: 플럭스 재료

Country Status (7)

Country Link
US (1) US8187505B2 (enExample)
EP (2) EP2191479A1 (enExample)
JP (1) JP2011519112A (enExample)
KR (1) KR101208136B1 (enExample)
CN (1) CN101884074A (enExample)
TW (1) TW200937450A (enExample)
WO (2) WO2009052343A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1997941B1 (en) * 2006-03-01 2014-12-17 Mitsubishi Gas Chemical Company, Inc. PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH
NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
US20100294353A1 (en) * 2009-05-21 2010-11-25 E. I. Du Pont De Nemours And Company Conductive paste for solar cell electrode
JP5426241B2 (ja) * 2009-06-10 2014-02-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー チップ抵抗器の表電極および裏電極
KR101332429B1 (ko) * 2009-12-17 2013-11-22 제일모직주식회사 태양전지 전극용 페이스트 및 이를 이용한 태양전지
KR101045262B1 (ko) * 2009-12-21 2011-06-29 제일모직주식회사 스텔스 다이싱용 반도체용 접착 조성물 및 이를 이용한 접착 필름
CN102314956A (zh) * 2010-07-09 2012-01-11 硕禾电子材料股份有限公司 导电铝胶及其制造方法、太阳能电池及其模块
KR101374359B1 (ko) * 2010-09-15 2014-03-18 제일모직주식회사 태양전지 전극용 페이스트 및 이를 이용하여 제조되는 태양전지
US8562872B2 (en) 2010-09-15 2013-10-22 Cheil Industries, Inc. Paste for solar cell electrode and solar cell prepared using the same
WO2012044281A1 (en) * 2010-09-28 2012-04-05 E. I. Du Pont De Nemours And Company Conductive paste for solar cell electrode
JP2012209148A (ja) * 2011-03-30 2012-10-25 Sony Corp 導電性粒子、導電性ペースト、及び、回路基板
US20120312369A1 (en) * 2011-06-13 2012-12-13 E I Du Pont De Nemours And Company Thick film paste containing bismuth-based oxide and its use in the manufacture of semiconductor devices
EP2839511A4 (en) * 2012-04-18 2015-12-02 Heraeus Precious Metals North America Conshohocken Llc SOLAR CELL CONTACTS WITH INTERMETALLIC NICKEL COMPOSITIONS
US20160204303A1 (en) * 2013-08-21 2016-07-14 Gtat Corporation Using an active solder to couple a metallic article to a photovoltaic cell
CN106133894B (zh) * 2014-04-04 2018-11-16 京瓷株式会社 热固化性树脂组合物、半导体装置及电气电子部件
US10040717B1 (en) 2017-09-18 2018-08-07 Jiangxi Jiayin Science and Technology, Ltd. Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces
CN112041994B (zh) * 2018-03-30 2022-06-21 深圳市首骋新材料科技有限公司 晶硅太阳能电池正面导电浆料及其制备方法和太阳能电池
US20200243697A1 (en) * 2019-01-28 2020-07-30 Dupont Electronics, Inc. Solar cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4625848B1 (enExample) * 1966-04-15 1971-07-26
US4874550A (en) * 1987-08-20 1989-10-17 General Electric Company Thick-film copper conductor inks
US20060001009A1 (en) * 2004-06-30 2006-01-05 Garreau-Iles Angelique Genevie Thick-film conductive paste
US7556748B2 (en) * 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
US7435361B2 (en) 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
JP4807063B2 (ja) 2005-12-20 2011-11-02 ソニー株式会社 復号装置、制御方法、およびプログラム
JP2007194580A (ja) * 2005-12-21 2007-08-02 E I Du Pont De Nemours & Co 太陽電池電極用ペースト

Also Published As

Publication number Publication date
WO2009052474A1 (en) 2009-04-23
TW200937450A (en) 2009-09-01
WO2009052343A1 (en) 2009-04-23
US8187505B2 (en) 2012-05-29
CN101884074A (zh) 2010-11-10
KR20100080611A (ko) 2010-07-09
EP2191480A1 (en) 2010-06-02
EP2191479A1 (en) 2010-06-02
JP2011519112A (ja) 2011-06-30
US20090104457A1 (en) 2009-04-23

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