KR101201697B1 - 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치 - Google Patents

모노머 냉각트랩 및 이를 이용하는 모노머 증착장치 Download PDF

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Publication number
KR101201697B1
KR101201697B1 KR1020100092538A KR20100092538A KR101201697B1 KR 101201697 B1 KR101201697 B1 KR 101201697B1 KR 1020100092538 A KR1020100092538 A KR 1020100092538A KR 20100092538 A KR20100092538 A KR 20100092538A KR 101201697 B1 KR101201697 B1 KR 101201697B1
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KR
South Korea
Prior art keywords
monomer
case
gas
cooling
chamber
Prior art date
Application number
KR1020100092538A
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English (en)
Korean (ko)
Other versions
KR20120030795A (ko
Inventor
윤형석
남궁성태
김장미
박일준
Original Assignee
에스엔유 프리시젼 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에스엔유 프리시젼 주식회사 filed Critical 에스엔유 프리시젼 주식회사
Priority to KR1020100092538A priority Critical patent/KR101201697B1/ko
Priority to PCT/KR2010/006626 priority patent/WO2012039523A1/ko
Priority to CN201080069180.9A priority patent/CN103118753B/zh
Priority to TW099133355A priority patent/TWI397592B/zh
Publication of KR20120030795A publication Critical patent/KR20120030795A/ko
Application granted granted Critical
Publication of KR101201697B1 publication Critical patent/KR101201697B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D8/00—Cold traps; Cold baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020100092538A 2010-09-20 2010-09-20 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치 KR101201697B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020100092538A KR101201697B1 (ko) 2010-09-20 2010-09-20 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치
PCT/KR2010/006626 WO2012039523A1 (ko) 2010-09-20 2010-09-29 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치
CN201080069180.9A CN103118753B (zh) 2010-09-20 2010-09-29 用于粘附单体的冷捕集器和使用冷捕集器的单体沉积设备
TW099133355A TWI397592B (zh) 2010-09-20 2010-09-30 用以附著單體之冷阱與用以沉積單體的裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100092538A KR101201697B1 (ko) 2010-09-20 2010-09-20 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치

Publications (2)

Publication Number Publication Date
KR20120030795A KR20120030795A (ko) 2012-03-29
KR101201697B1 true KR101201697B1 (ko) 2012-11-15

Family

ID=45873995

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100092538A KR101201697B1 (ko) 2010-09-20 2010-09-20 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치

Country Status (4)

Country Link
KR (1) KR101201697B1 (zh)
CN (1) CN103118753B (zh)
TW (1) TWI397592B (zh)
WO (1) WO2012039523A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102052074B1 (ko) 2013-04-04 2019-12-05 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
CN103550949B (zh) * 2013-11-21 2016-01-06 智慧城市系统服务（中国）有限公司 除尘除雾装置
KR101629463B1 (ko) * 2013-12-18 2016-06-10 주식회사 에스에프에이 증발 장치 및 이를 구비하는 박막 증착 장치
KR101969114B1 (ko) * 2017-01-31 2019-04-15 재단법인 탄소순환형 차세대 바이오매스 생산전환 기술연구단 하이드로겔을 이용한 수처리 분리막의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0711762Y2 (ja) * 1991-08-23 1995-03-22 岩谷産業株式会社 真空発生装置のコールドトラップ
JP3276514B2 (ja) * 1994-04-26 2002-04-22 東京エレクトロン株式会社 プラズマ処理装置
US6908499B2 (en) * 2002-10-11 2005-06-21 Taiwan Semiconductor Manufacturing Co., Ltd Cold trap for CVD furnace
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
JP2006007149A (ja) * 2004-06-29 2006-01-12 Shin Meiwa Ind Co Ltd 真空成膜装置用コールドトラップ及び真空成膜装置用排気システム
KR101173645B1 (ko) * 2007-12-31 2012-08-20 (주)에이디에스 가스 분사 유닛 및 이를 구비하는 박막 증착 장치
CN101222025B (zh) * 2008-01-22 2010-08-04 电子科技大学 有机电致发光器件的封装装置及其封装方法
KR101440416B1 (ko) * 2008-05-23 2014-09-17 주식회사 원익아이피에스 진공처리장치

Also Published As

Publication number Publication date
CN103118753A (zh) 2013-05-22
CN103118753B (zh) 2015-02-18
TWI397592B (zh) 2013-06-01
TW201213567A (en) 2012-04-01
KR20120030795A (ko) 2012-03-29
WO2012039523A1 (ko) 2012-03-29

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