WO2012039523A1 - 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치 - Google Patents
모노머 냉각트랩 및 이를 이용하는 모노머 증착장치 Download PDFInfo
- Publication number
- WO2012039523A1 WO2012039523A1 PCT/KR2010/006626 KR2010006626W WO2012039523A1 WO 2012039523 A1 WO2012039523 A1 WO 2012039523A1 KR 2010006626 W KR2010006626 W KR 2010006626W WO 2012039523 A1 WO2012039523 A1 WO 2012039523A1
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- Prior art keywords
- monomer
- gas
- cooling
- case
- chamber
- Prior art date
Links
- 239000000178 monomer Substances 0.000 title claims abstract description 222
- 238000001816 cooling Methods 0.000 title claims abstract description 112
- 238000001704 evaporation Methods 0.000 title abstract 2
- 230000008020 evaporation Effects 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000003507 refrigerant Substances 0.000 claims abstract description 9
- 238000007599 discharging Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 48
- 230000008021 deposition Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005137 deposition process Methods 0.000 claims description 8
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 23
- 239000010409 thin film Substances 0.000 description 10
- 238000012423 maintenance Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000002826 coolant Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D8/00—Cold traps; Cold baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Definitions
- the present invention relates to a monomer cooling trap and a monomer deposition apparatus using the same, and more particularly, to a monomer cooling trap that can recover the monomer from the gas discharged to the outside of the chamber and a monomer deposition apparatus using the same.
- the organic light emitting display device is a next generation display device having self-luminous characteristics, and has excellent characteristics in terms of viewing angle, contrast, response speed, power consumption, etc., compared to a liquid crystal display device (LCD).
- LCD liquid crystal display device
- the organic light emitting diode display includes an organic light emitting diode that is connected between a scan line and a data line in a matrix to form a pixel.
- the organic light emitting device is composed of an anode electrode and a cathode electrode, and an organic thin film layer formed between the anode electrode and the cathode electrode and including a hole transport layer, an organic light emitting layer, and an electron transport layer, and is predetermined on the anode electrode and the cathode electrode.
- a voltage of is applied, holes injected through the anode and electrons injected through the cathode are recombined in the emission layer, and light is emitted by the energy difference generated in the process.
- the organic light emitting device is vulnerable to hydrogen or oxygen because it contains an organic material, and since the cathode electrode is formed of a metal material, the organic light emitting device is easily oxidized by moisture in the air, thereby deteriorating electrical characteristics and light emission characteristics. Therefore, in order to prevent this, a container made of a metal can or cup or an encapsulation substrate made of glass or plastic is disposed to face a substrate on which an organic light emitting element is formed, and then a sealant such as epoxy. Seal with
- an organic layer 3 and an inorganic layer 4 are alternately stacked on an organic light emitting element 2 disposed on a substrate 1 to form an encapsulation layer.
- the method is generally used because it can satisfy the water vapor transmission rate (WVTR) requirements of ⁇ 10E-6g / m2 / day required in the organic light emitting display.
- WVTR water vapor transmission rate
- a liquid monomer is evaporated and then cured with ultraviolet rays to form a polymer, and then the cured polymer. Functions as the organic film 3.
- the monomer m converted into a vapor state is supplied to the monomer chamber 20 from the monomer tank 21 containing the monomer in the liquid state.
- the shutter 30 is opened and the monomer m is sprayed onto the substrate 1 to be deposited on the substrate 1.
- the monomer (m) is cured by ultraviolet rays to deform into a polymer to form the organic film (3).
- the gas refers to gases other than the monomer (m) vapor (or the monomer (m) vapor and the source gas) to be a thin film material. That is, gas out of the surface of the monomer chamber 20, unnecessary gas generated from the raw material of the monomer m, and argon gas for purging the flow path through which the monomer m is supplied.
- a vacuum pump 40 is generally connected to the monomer chamber 20 to discharge the gas to the outside.
- the monomer m which is a raw material of the thin film
- the vacuum pump 40 provided on the flow path for discharging the unnecessary gas in the monomer chamber 20 to the outside, whereby the vacuum pump 40 is a monomer. contaminated in a short time by (m). Due to the rapid contamination of the vacuum pump increases the number of times to stop the operation of the deposition apparatus and perform maintenance work (maintenance), there is a problem that the productivity of the device is lowered.
- an object of the present invention is to solve such a conventional problem, and to implement an inexpensive module for discharging unnecessary gas to the outside by replacing an expensive vacuum pump contaminated by monomers continuously supplied and discharged during the deposition process. Accordingly, the present invention provides a monomer cooling trap and a monomer deposition apparatus using the same, which can improve productivity of a deposition apparatus and reduce an expensive vacuum pump replacement cost.
- the monomer cooling trap of the present invention is provided on a flow path for discharging the gas and the monomer (monomer) generated during the deposition process to the outside, the case; A suction port through which the gas and the monomer are sucked in; A cooling plate accommodated in the case and having a flow path through which a refrigerant flows, and having a monomer attached to a surface thereof and having a through hole formed through the upper and lower surfaces thereof; And an exhaust port through which the gas inside the case is exhausted.
- a plurality of cooling plates are provided in the case, and the plurality of cooling plates are arranged to be spaced apart along the flow direction of the gas and the monomer, and the through holes are provided. This formed position is arranged to align along the flow direction of the gas and monomer.
- the opening area of the through-holes formed in the respective cooling plates gradually decreases from the upstream side to the downstream side in the flow direction of the gas and the monomer inside the case.
- the monomer cooling trap in order to increase the surface area to which the monomer is attached, further comprising a grating plate which is installed in contact with the upper or lower surface of the cooling plate.
- the case includes a guide groove formed on the wall surface of the case so that the side portion of the cooling plate can be fitted.
- a flow path through which the refrigerant flows is formed inside the wall surface of the case.
- the monomer deposition apparatus of the present invention in order to achieve the above object, the main chamber in which the monomer is deposited on the substrate; A monomer chamber in which the monomer is accommodated in a vapor state; A shutter that opens the monomer chamber such that the monomer is injected from the monomer chamber into the main chamber; Claims, characterized in that it comprises a; monomer cooling trap provided on the flow path for discharging the gas and the monomer in the monomer chamber to the outside.
- the monomer deposition apparatus preferably, further comprising an exhaust passage for communicating the monomer cooling trap with the main chamber, wherein the gas from which the monomer is removed by the monomer cooling trap is exhausted to the main chamber.
- the monomer cooling trap and the monomer deposition apparatus using the same of the present invention by replacing the expensive vacuum pump contaminated by the monomer continuously supplied and discharged during the deposition process by implementing a low-cost module to discharge unnecessary gas to the outside, Improve the productivity of the device and reduce the cost of expensive vacuum pump replacement.
- the recovery efficiency of the monomer can be improved by arranging a plurality of cooling plates and changing the opening area of the through hole along the flow direction of the gas and the monomer. .
- FIG. 1 is a cross-sectional view of an example of an organic light emitting display device to which a thin film encapsulation technology is applied.
- Figure 2 is a schematic diagram showing an example of a conventional monomer deposition apparatus.
- Figure 3 is a schematic diagram showing a monomer deposition apparatus according to an embodiment of the present invention.
- FIG. 4 is a perspective view of a monomer cooling trap according to an embodiment of the present invention.
- FIG. 5 is a view showing a state in which the cooling plate is removed in the monomer cooling trap of FIG.
- FIG. 6 is a view showing a state in which a plurality of cooling plates are arranged in the monomer cooling trap of FIG.
- Figure 3 is a schematic view showing a monomer deposition apparatus according to an embodiment of the present invention
- Figure 4 is a perspective view of the monomer cooling trap according to an embodiment of the present invention
- Figure 5 is a monomer cooling trap of Figure 4 6 is a view illustrating a state in which a cooling plate is removed
- FIG. 6 is a view illustrating a state in which a plurality of cooling plates are arranged in the monomer cooling trap of FIG. 4.
- the monomer deposition apparatus of the present embodiment is an apparatus for depositing a monomer in a gas state on a substrate, and includes a main chamber 10, a monomer chamber 20, and a shutter 30. ) And a monomer cooling trap (100).
- a case where the gaseous monomer m, which is a raw material of the organic film 3 that seals the organic light emitting element 2, is deposited on the substrate 1 will be described as an example.
- the main chamber 10 is a space in which the substrate 1 on which the organic light emitting element 2 is formed is disposed, and a thin film for sealing the organic light emitting element 2 is deposited.
- a substrate support part (not shown) for supporting the substrate 1 and a linear transfer unit (not shown) for reciprocating the substrate support part in a straight line are provided.
- the substrate 1 is seated on the substrate support portion, and the monomer m in a gaseous state is injected toward the substrate 1 while the substrate support portion is linearly transferred by the linear transfer unit.
- the monomer (m) deposited on the substrate (1) is irradiated with ultraviolet rays in a subsequent process, and the monomer (m) irradiated with the ultraviolet rays is transformed into a polymer and the organic film (3) in a thin film sealing the organic light emitting element (2).
- the linear transfer unit is a configuration that can be implemented by a person skilled in the art such as a combination of a motor, a ball screw and a linear transfer guide or a linear motor, detailed description thereof will be omitted.
- the vacuum in the main chamber 10 is maintained, the vacuum of about 10E-4 ⁇ 10E-7 torr is maintained.
- a vacuum pump for maintaining the main chamber 10 in a vacuum state is installed to communicate with the main chamber 10, and gas or monomer m in the main chamber 10 is sucked by the vacuum pump.
- the said monomer chamber 20 is a space where the monomer m used for a thin film is accommodated in a vapor state.
- a monomer tank 21 for accommodating a liquid monomer is provided outside the monomer chamber 20.
- the monomer is supplied from the monomer tank 21 to the monomer chamber 20.
- a capillary tube or an ultrasonic nozzle is installed between the monomer tank 21 and the monomer chamber 20 to provide a liquid state. By inducing the pressure drop of the monomer, the monomer m converted into the vapor state is supplied to the monomer chamber 20.
- the shutter 30 opens the monomer chamber 20 so that the vaporized monomer m is injected from the monomer chamber 20 into the main chamber 10. While the deposition process is not performed, the shutter 30 blocks the nozzle 22 of the monomer chamber connecting the main chamber 10 and the monomer chamber 20, and from the monomer chamber 20 to the main chamber 10. No monomer (m) feed is made.
- the shutter 30 opens the nozzle 22 of the monomer chamber and the monomer chamber ( In the 20) monomer (m) supply to the main chamber 10 is made.
- the shutter 30 again blocks the nozzle 22 of the monomer chamber and the main chamber 10 in the monomer chamber 20. No monomer (m) feed to the furnace is made.
- the shutter 30 opens the monomer chamber 20 only while the deposition process is performed to communicate the monomer chamber 20 with the main chamber 10, thereby allowing the monomer (20) to flow from the monomer chamber 20 to the main chamber 10. m) is supplied.
- the monomer cooling trap 100 is installed on the flow path for discharging the monomer m and the gas in the monomer chamber 20 to the outside, and the case 110, the suction port 120, the cooling plate 130, And a grating plate 150 and an exhaust port 140.
- the gas discharged to the outside in the monomer chamber 20 is an unnecessary gas generated from the raw material of the monomer (m)
- the gas from the wall surface of the monomer chamber 20 and argon for purging the flow path to the monomer (m) is supplied Gas and the like.
- the case 110 accommodates a cooling plate 130 to be described later in an inner space.
- a flow path through which the coolant flows is formed in the wall surface 111 of the case, and the coolant is supplied into the wall surface 111 from the outside.
- the case 110 itself is cooled by the refrigerant flowing into the case wall 111, so that the monomer m in the vapor state can be better condensed inside the monomer cooling trap 100. That is, the overall cooling efficiency of the monomer cooling trap 100 can be improved.
- a coolant supply port 161 through which the coolant is supplied from the outside is formed in the lower part of the case 110, and the coolant may flow between the wall surfaces 111 through the coolant hose 162.
- Guide grooves 112 are formed in the wall surface 111 of the case.
- the side of the cooling plate 130 may be inserted into the guide groove 112 when the cooling plate 130 to be described later is inserted into the case 110 to be coupled, and the cooling plate 130 may be inserted from the case 110.
- the cooling plate 130 When removing, the cooling plate 130 is slid by the guide groove 112 and is removed from the case 110.
- the guide groove 112 of the case facilitates the coupling and separation of the cooling plate 130 and the case 110.
- the suction port 120 is formed at one side of the case 110, and the monomer (m) or gas discharged from the monomer chamber 20 to the outside (not inside the main chamber) is sucked and supplied into the case 110. do.
- the cooling plate 130 is accommodated in the case 110, and the monomer (m) is attached to the surface by cooling by a refrigerant supplied from the outside.
- a flow path through which the refrigerant flows is formed in the cooling plate 130, and the cooling plate 130 itself is cooled by the refrigerant flowing through the flow path.
- the mononer m in the vapor state is attached to the surface of the cooling plate 130 while being condensed and granulated due to the low temperature of the cooling plate 130.
- the monomer m is recovered by the cooling plate 130, the residual gas from which the monomer m is removed is discharged to the outside of the monomer cooling trap 100.
- the through plate 131 is formed in the cooling plate 130 to penetrate the upper and lower surfaces, and the monomer m and the residual gas flow through the cooling plate 130 through the through hole 131.
- a plurality of cooling plates 130 are provided in the case 110 to be spaced apart along the flow direction A of the gas and the monomer, thereby recovering the monomer m in a plurality of steps.
- the monomer m is recovered first by the cooling plate 130 disposed at the uppermost side, and the monomer m is again collected by the plurality of cooling plates 130 disposed below.
- the recovery rate of the monomer can be increased from the gas in which the monomer and the residual gas are mixed.
- the plurality of cooling plates 130 are arranged such that the positions where the through holes 131 are formed in the cooling plates 130 are aligned along the flow direction A of the gas and the monomers, whereby the through holes in each cooling plate 130 are provided.
- the position where the 131 is formed is minimized such as the resistance of the flow which may occur due to the deviation from each other.
- the through hole 131 is formed in the center of the cooling plate 130 and the through holes 131 are arranged to be aligned in the vertical direction to minimize the flow resistance of the monomer.
- the opening area of the through holes 131 formed in the respective cooling plates 130 gradually decreases from the upstream side to the downstream side in the flow direction A of the gas and monomer in the case 110.
- the opening area of the through hole 131 of the cooling plate 130 disposed at the uppermost side is the largest, and the opening area of the through hole 131 of the cooling plate 130 arranged at the lowermost side thereof. Is the smallest, and the opening area of the through hole 131 of the cooling plate 130 interposed therebetween becomes small in sequence.
- the recovery efficiency of the monomer can be increased.
- a relatively large amount of the monomer m is contained in the mixed gas, so that the opening area of the through hole 131 is large, so that a large amount of the monomer m can be recovered even at a high flow rate.
- the monomer m is removed by the cooling plate 130 disposed upstream, so that a relatively small amount of the monomer m is included in the through hole 131.
- the amount of monomer recovered can be increased by decreasing the opening area of the resin (by increasing the flow resistance) to slow the flow rate.
- the grid plate 150 is provided to contact the upper or lower surface of the cooling plate 130 in order to increase the surface area to which the monomer (m) is attached.
- the grating plate 150 is installed in contact with the cooling plate 130 and cooled to the same level as the cooling plate 130, so that the monomer (m) may be condensed and granulated on the surface of the grating plate 150. Due to the lattice plate 150, the surface area to which the monomer m is attached can be increased, thereby increasing the recovery efficiency of the monomer.
- the exhaust port 140 is formed at the other side of the case 110, and the residual gas from which the monomer m is removed in the case 110 is exhausted to the outside of the monomer cooling trap 100. By doing so, the phenomenon in which the exhaust port 140 and the exhaust flow path 50 are blocked by the monomer m can be prevented.
- the exhaust port 140 is provided with an exhaust passage 50 so as to communicate with the main chamber 10. Since the main chamber 10 has a vacuum of about 10E-4 to 10E-7 torr, and the monomer chamber 20 has a somewhat higher vacuum of about 10E-1 to 10E-3 torr, In addition, a flow path of the monomer (m) and the gas that is connected from the monomer chamber 20 to the main chamber 10 via the monomer cooling trap 100 is naturally formed. Therefore, since the exhaust port 140 communicates with the main chamber 10, it is not necessary to install a separate vacuum pump on the downstream side of the monomer cooling trap 100.
- the monomer cooling trap 100 configured as described above can be performed simply. Maintenance of the monomer cooling trap 100 by removing the cooling plate 130 and the grid plate 150 from the case 110, and then removing the granulated monomer attached to the surfaces of the cooling plate 130 and the grid plate 150. You can complete the task. Therefore, the monomer cooling trap 100 of the present invention simplifies the maintenance work of the monomer recovery device, and can be used semi-permanently.
- the monomer cooling trap and the monomer deposition apparatus using the same according to the present embodiment configured as described above are inexpensive to replace the expensive vacuum pump contaminated by the monomer continuously supplied and discharged during the deposition process to discharge unnecessary gas to the outside.
- By implementing the module it is possible to improve the productivity of the deposition apparatus and to reduce the cost of replacing the expensive vacuum pump.
- a plurality of cooling plates are arranged, and the opening area of the through hole is changed along the flow direction of the gas and the monomer, thereby recovering the monomer. The effect which can improve efficiency can be acquired.
- the monomer cooling trap according to the present embodiment configured as described above and the monomer deposition apparatus using the same, by forming a guide groove that can be inserted into the cooling plate inside the case, the coupling and separation operation of the cooling plate and the case The effect which can be made easy can be obtained.
- the monomer cooling trap and the monomer deposition apparatus using the same according to the present embodiment configured as described above complete the maintenance work of the monomer cooling trap by removing the granulated monomer attached to the surface of the cooling plate and the grid,
- the maintenance work can be simplified and the effect can be used semi-permanently.
- the monomer cooling trap has a rectangular shape, and the cooling plate is described and illustrated in a rectangular plate shape, but the monomer cooling trap may have a cylindrical shape, and the cooling plate may be manufactured in a circular plate shape. It can be implemented in various forms possible.
- the exhaust port of the monomer cooling trap is in communication with the main chamber, but the exhaust port of the monomer cooling trap is applied to various types of devices or spaces such as a vacuum pump that can maintain a vacuum lower than that of the monomer chamber. Can be communicated.
- the present invention can be used in the monomer cooling trap that can recover the monomer from the gas and monomer discharged to the outside of the chamber and the monomer deposition apparatus using the same.
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- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080069180.9A CN103118753B (zh) | 2010-09-20 | 2010-09-29 | 用于粘附单体的冷捕集器和使用冷捕集器的单体沉积设备 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020100092538A KR101201697B1 (ko) | 2010-09-20 | 2010-09-20 | 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치 |
KR10-2010-0092538 | 2010-09-20 |
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WO2012039523A1 true WO2012039523A1 (ko) | 2012-03-29 |
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PCT/KR2010/006626 WO2012039523A1 (ko) | 2010-09-20 | 2010-09-29 | 모노머 냉각트랩 및 이를 이용하는 모노머 증착장치 |
Country Status (4)
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KR (1) | KR101201697B1 (zh) |
CN (1) | CN103118753B (zh) |
TW (1) | TWI397592B (zh) |
WO (1) | WO2012039523A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150071334A (ko) * | 2013-12-18 | 2015-06-26 | 주식회사 에스에프에이 | 증발 장치 및 이를 구비하는 박막 증착 장치 |
US10081862B2 (en) | 2013-04-04 | 2018-09-25 | Samsung Dispaly Co., Ltd. | Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103550949B (zh) * | 2013-11-21 | 2016-01-06 | 智慧城市系统服务(中国)有限公司 | 除尘除雾装置 |
KR101969114B1 (ko) * | 2017-01-31 | 2019-04-15 | 재단법인 탄소순환형 차세대 바이오매스 생산전환 기술연구단 | 하이드로겔을 이용한 수처리 분리막의 제조방법 |
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JPH0518602U (ja) * | 1991-08-23 | 1993-03-09 | 岩谷産業株式会社 | 真空発生装置のコールドトラツプ |
JPH0813169A (ja) * | 1994-04-26 | 1996-01-16 | Tokyo Electron Ltd | プラズマ処理装置 |
US20040238123A1 (en) * | 2003-05-22 | 2004-12-02 | Axcelis Technologies, Inc. | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
KR20090121903A (ko) * | 2008-05-23 | 2009-11-26 | 주식회사 아이피에스 | 진공처리장치 |
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US6908499B2 (en) * | 2002-10-11 | 2005-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Cold trap for CVD furnace |
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KR101173645B1 (ko) * | 2007-12-31 | 2012-08-20 | (주)에이디에스 | 가스 분사 유닛 및 이를 구비하는 박막 증착 장치 |
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- 2010-09-20 KR KR1020100092538A patent/KR101201697B1/ko not_active IP Right Cessation
- 2010-09-29 WO PCT/KR2010/006626 patent/WO2012039523A1/ko active Application Filing
- 2010-09-29 CN CN201080069180.9A patent/CN103118753B/zh not_active Expired - Fee Related
- 2010-09-30 TW TW099133355A patent/TWI397592B/zh not_active IP Right Cessation
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Publication number | Priority date | Publication date | Assignee | Title |
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US10081862B2 (en) | 2013-04-04 | 2018-09-25 | Samsung Dispaly Co., Ltd. | Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus |
US10870915B2 (en) | 2013-04-04 | 2020-12-22 | Samsung Display Co., Ltd. | Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus |
KR20150071334A (ko) * | 2013-12-18 | 2015-06-26 | 주식회사 에스에프에이 | 증발 장치 및 이를 구비하는 박막 증착 장치 |
KR101629463B1 (ko) * | 2013-12-18 | 2016-06-10 | 주식회사 에스에프에이 | 증발 장치 및 이를 구비하는 박막 증착 장치 |
Also Published As
Publication number | Publication date |
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CN103118753A (zh) | 2013-05-22 |
CN103118753B (zh) | 2015-02-18 |
TWI397592B (zh) | 2013-06-01 |
TW201213567A (en) | 2012-04-01 |
KR20120030795A (ko) | 2012-03-29 |
KR101201697B1 (ko) | 2012-11-15 |
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