KR101197639B1 - 그래핀 구조, 그 제조 방법 및 그래핀 구조를 이용한 투명 전극 - Google Patents

그래핀 구조, 그 제조 방법 및 그래핀 구조를 이용한 투명 전극 Download PDF

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KR101197639B1
KR101197639B1 KR1020100092512A KR20100092512A KR101197639B1 KR 101197639 B1 KR101197639 B1 KR 101197639B1 KR 1020100092512 A KR1020100092512 A KR 1020100092512A KR 20100092512 A KR20100092512 A KR 20100092512A KR 101197639 B1 KR101197639 B1 KR 101197639B1
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South Korea
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film
graphene
amorphous carbon
substrate
catalyst
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KR1020100092512A
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English (en)
Korean (ko)
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KR20120030780A (ko
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김기범
이홍희
김현미
조성용
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서울대학교산학협력단
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Priority to KR1020100092512A priority Critical patent/KR101197639B1/ko
Priority to PCT/KR2011/001642 priority patent/WO2012039533A1/en
Publication of KR20120030780A publication Critical patent/KR20120030780A/ko
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells
KR1020100092512A 2010-09-20 2010-09-20 그래핀 구조, 그 제조 방법 및 그래핀 구조를 이용한 투명 전극 KR101197639B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020100092512A KR101197639B1 (ko) 2010-09-20 2010-09-20 그래핀 구조, 그 제조 방법 및 그래핀 구조를 이용한 투명 전극
PCT/KR2011/001642 WO2012039533A1 (en) 2010-09-20 2011-03-09 Graphene structure, method of forming the graphene structure, and transparent electrode including the graphene structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100092512A KR101197639B1 (ko) 2010-09-20 2010-09-20 그래핀 구조, 그 제조 방법 및 그래핀 구조를 이용한 투명 전극

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KR20120030780A KR20120030780A (ko) 2012-03-29
KR101197639B1 true KR101197639B1 (ko) 2012-11-07

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WO (1) WO2012039533A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103193224A (zh) * 2013-04-17 2013-07-10 苏州大学 在非金属基底上低温制备石墨烯薄膜的方法

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CN102774065B (zh) * 2012-06-01 2015-04-29 中国科学院宁波材料技术与工程研究所 一种具有石墨烯结构的非晶碳膜及其制备方法
KR101920718B1 (ko) 2012-07-27 2018-11-21 삼성전자주식회사 그래핀 소자 제조 장치 및 이를 이용한 그래핀 소자 제조 방법
KR101432970B1 (ko) * 2012-07-29 2014-08-21 이장훈 카본블랙을 이용한 그래핀 구조체 제조방법
KR101984695B1 (ko) 2012-08-29 2019-09-03 삼성전자주식회사 그래핀 소자 및 그 제조방법
WO2014150586A1 (en) * 2013-03-15 2014-09-25 Solan, LLC Graphene manufacture using foundation materials with favored structures
DE102014115708A1 (de) 2014-10-29 2016-05-04 Aixtron Se Verfahren zum Trennen einer Kohlenstoffstruktur von einer Keimstruktur
KR101915206B1 (ko) * 2014-11-11 2018-11-05 한화에어로스페이스 주식회사 그래핀의 제조 방법
US9382118B2 (en) 2014-11-11 2016-07-05 Hanwha Techwin Co., Ltd. Method of manufacturing graphene
US10816828B2 (en) 2016-11-02 2020-10-27 Samsung Electronics Co., Ltd. Multi-stack graphene structure and device including the same
US11198611B2 (en) 2019-07-30 2021-12-14 Lyten, Inc. 3D self-assembled multi-modal carbon-based particle
US11631893B2 (en) 2019-10-25 2023-04-18 Lyten, Inc. Artificial solid electrolyte interface cap layer for an anode in a Li S battery system
US11133495B2 (en) 2019-10-25 2021-09-28 Lyten, Inc. Advanced lithium (LI) ion and lithium sulfur (LI S) batteries
US11398622B2 (en) 2019-10-25 2022-07-26 Lyten, Inc. Protective layer including tin fluoride disposed on a lithium anode in a lithium-sulfur battery
US11539074B2 (en) 2019-10-25 2022-12-27 Lyten, Inc. Artificial solid electrolyte interface (A-SEI) cap layer including graphene layers with flexible wrinkle areas
US11508966B2 (en) 2019-10-25 2022-11-22 Lyten, Inc. Protective carbon layer for lithium (Li) metal anodes
US11127942B2 (en) 2019-10-25 2021-09-21 Lyten, Inc. Systems and methods of manufacture of carbon based structures incorporated into lithium ion and lithium sulfur (li s) battery electrodes
US11489161B2 (en) 2019-10-25 2022-11-01 Lyten, Inc. Powdered materials including carbonaceous structures for lithium-sulfur battery cathodes
US11127941B2 (en) 2019-10-25 2021-09-21 Lyten, Inc. Carbon-based structures for incorporation into lithium (Li) ion battery electrodes
US11309545B2 (en) 2019-10-25 2022-04-19 Lyten, Inc. Carbonaceous materials for lithium-sulfur batteries
US11342561B2 (en) 2019-10-25 2022-05-24 Lyten, Inc. Protective polymeric lattices for lithium anodes in lithium-sulfur batteries
US11735745B2 (en) 2021-06-16 2023-08-22 Lyten, Inc. Lithium-air battery
US11870063B1 (en) 2022-10-24 2024-01-09 Lyten, Inc. Dual layer gradient cathode electrode structure for reducing sulfide transfer

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US7071258B1 (en) * 2002-10-21 2006-07-04 Nanotek Instruments, Inc. Nano-scaled graphene plates
US20050271574A1 (en) * 2004-06-03 2005-12-08 Jang Bor Z Process for producing nano-scaled graphene plates
KR20090026568A (ko) * 2007-09-10 2009-03-13 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR101443219B1 (ko) * 2007-12-17 2014-09-19 삼성전자주식회사 그라펜 쉘의 제조방법 및 이로부터 제조된 그라펜 쉘

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103193224A (zh) * 2013-04-17 2013-07-10 苏州大学 在非金属基底上低温制备石墨烯薄膜的方法

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KR20120030780A (ko) 2012-03-29

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