KR101196591B1 - 유기 반도체 막 - Google Patents

유기 반도체 막 Download PDF

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Publication number
KR101196591B1
KR101196591B1 KR1020057005785A KR20057005785A KR101196591B1 KR 101196591 B1 KR101196591 B1 KR 101196591B1 KR 1020057005785 A KR1020057005785 A KR 1020057005785A KR 20057005785 A KR20057005785 A KR 20057005785A KR 101196591 B1 KR101196591 B1 KR 101196591B1
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KR
South Korea
Prior art keywords
layer
film
electrically
layers
transferred
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Expired - Fee Related
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KR1020057005785A
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English (en)
Korean (ko)
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KR20050073468A (ko
Inventor
노르베르트 루츠
하인리히 빌트
루드비히 브렘
Original Assignee
레오나르트 쿠르츠 스티프퉁 운트 코. 카게
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Application filed by 레오나르트 쿠르츠 스티프퉁 운트 코. 카게 filed Critical 레오나르트 쿠르츠 스티프퉁 운트 코. 카게
Publication of KR20050073468A publication Critical patent/KR20050073468A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
KR1020057005785A 2002-10-02 2003-09-30 유기 반도체 막 Expired - Fee Related KR101196591B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10246241.0 2002-10-02
DE10246241 2002-10-02
PCT/DE2003/003258 WO2004032257A2 (de) 2002-10-02 2003-09-30 Folie mit organischen halbleitern

Publications (2)

Publication Number Publication Date
KR20050073468A KR20050073468A (ko) 2005-07-13
KR101196591B1 true KR101196591B1 (ko) 2012-11-02

Family

ID=32049195

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057005785A Expired - Fee Related KR101196591B1 (ko) 2002-10-02 2003-09-30 유기 반도체 막

Country Status (11)

Country Link
US (1) US7655498B2 (enExample)
EP (2) EP2261979B1 (enExample)
JP (1) JP4841841B2 (enExample)
KR (1) KR101196591B1 (enExample)
CN (1) CN100454602C (enExample)
AU (1) AU2003281923A1 (enExample)
DE (1) DE10393887D2 (enExample)
ES (1) ES2439446T3 (enExample)
PL (1) PL213928B1 (enExample)
RU (1) RU2317613C2 (enExample)
WO (1) WO2004032257A2 (enExample)

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DE10061297C2 (de) 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
DE10061299A1 (de) 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
DE10105914C1 (de) 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
DE10160732A1 (de) 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
DE10212640B4 (de) 2002-03-21 2004-02-05 Siemens Ag Logische Bauteile aus organischen Feldeffekttransistoren
DE10253154A1 (de) 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
DE50306538D1 (de) 2002-11-19 2007-03-29 Polyic Gmbh & Co Kg Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu
DE10302149A1 (de) 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
DE10330062A1 (de) * 2003-07-03 2005-01-27 Siemens Ag Verfahren und Vorrichtung zur Strukturierung von organischen Schichten
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340644B4 (de) 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
JP4549751B2 (ja) * 2004-06-17 2010-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100659061B1 (ko) * 2004-09-20 2006-12-19 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판표시장치
DE102005009820A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
US8089062B2 (en) * 2005-03-23 2012-01-03 Xerox Corporation Wax encapsulated electronic devices
US9024298B2 (en) * 2005-07-26 2015-05-05 Xerox Corporation Encapsulation layer for electronic devices
GB0523163D0 (en) * 2005-11-14 2005-12-21 Suisse Electronique Microtech Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack
US8174262B2 (en) 2006-07-21 2012-05-08 Halliburton Energy Services, Inc. Fluid saturation estimation
DE102006047388A1 (de) * 2006-10-06 2008-04-17 Polyic Gmbh & Co. Kg Feldeffekttransistor sowie elektrische Schaltung
EP1990661B1 (en) * 2007-05-07 2018-08-15 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Isotropic zero-order diffractive filter
DE102007061587A1 (de) * 2007-12-18 2009-06-25 Abb Ag Isolationsmaterial mit Lack und Materialzusatz sowie Isolationsband
GB2467316B (en) * 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
JP5676985B2 (ja) * 2010-09-09 2015-02-25 キヤノン株式会社 ホログラム形成装置及びホログラム形成方法
DE102011084437A1 (de) * 2011-10-13 2013-04-18 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zum Herstellen eines lichtemittierenden Bauelements
CA2861728C (fr) 2012-01-13 2020-04-28 Arjo Wiggins Fine Papers Limited Procede de fabrication d'une feuille
US9846874B2 (en) * 2012-04-25 2017-12-19 Hewlett-Packard Development Company, L.P. Performing a user related operation
FR2996338B1 (fr) 2012-09-28 2020-10-16 Hologram Ind Composant optique de securite a effet reflectif, fabrication d'un tel composant et document securise equipe d'un tel composant
CN103594624B (zh) * 2013-11-07 2015-12-09 电子科技大学 一种有机场效应晶体管及其制备方法
RU2573903C1 (ru) * 2014-09-02 2016-01-27 Федеральное государственное бюджетное учреждение науки Институт синтетических полимерных материалов им. Н.С. Ениколопова Российской академии наук (ИСПМ РАН) Способ получения гибкой электропроводящей полимерной пленки
CN104459833A (zh) * 2014-12-13 2015-03-25 中国科学技术大学先进技术研究院 一种新型光学聚合物复合薄膜及其制作方法和应用
CN108811400B (zh) * 2018-07-24 2020-09-25 Oppo广东移动通信有限公司 电子设备外壳及其制备方法以及电子设备
DE102019132140A1 (de) * 2019-11-27 2021-05-27 Bayerische Motoren Werke Aktiengesellschaft Verfahren und Vorrichtung zur Herstellung einer funktionalen Dekorschicht

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WO2002009190A1 (en) * 2000-07-19 2002-01-31 3M Innovative Properties Company Transistor gate insulator layer incorporating superfine ceramic particles
US20020033918A1 (en) * 2000-06-09 2002-03-21 Nobuyuki Shigeno Liquid crystal display device
WO2002047183A1 (de) * 2000-12-08 2002-06-13 Siemens Aktiengesellschaft Organischer feld-effekt-transistor, verfahren zur stukturierung eines ofets und integrierte schaltung

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WO2002009190A1 (en) * 2000-07-19 2002-01-31 3M Innovative Properties Company Transistor gate insulator layer incorporating superfine ceramic particles
WO2002047183A1 (de) * 2000-12-08 2002-06-13 Siemens Aktiengesellschaft Organischer feld-effekt-transistor, verfahren zur stukturierung eines ofets und integrierte schaltung

Also Published As

Publication number Publication date
AU2003281923A1 (en) 2004-04-23
WO2004032257A3 (de) 2005-06-09
EP1559147A2 (de) 2005-08-03
AU2003281923A8 (en) 2004-04-23
KR20050073468A (ko) 2005-07-13
DE10393887D2 (de) 2005-08-25
RU2317613C2 (ru) 2008-02-20
US20060180805A1 (en) 2006-08-17
EP2261979B1 (de) 2013-09-11
PL213928B1 (pl) 2013-05-31
EP1559147B1 (de) 2014-11-12
RU2005113274A (ru) 2006-01-27
CN100454602C (zh) 2009-01-21
ES2439446T3 (es) 2014-01-23
CN1689175A (zh) 2005-10-26
US7655498B2 (en) 2010-02-02
EP2261979A1 (de) 2010-12-15
PL374836A1 (en) 2005-11-14
WO2004032257A2 (de) 2004-04-15
JP2006501659A (ja) 2006-01-12
JP4841841B2 (ja) 2011-12-21

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