KR101156658B1 - 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법 - Google Patents

다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법 Download PDF

Info

Publication number
KR101156658B1
KR101156658B1 KR1020090090091A KR20090090091A KR101156658B1 KR 101156658 B1 KR101156658 B1 KR 101156658B1 KR 1020090090091 A KR1020090090091 A KR 1020090090091A KR 20090090091 A KR20090090091 A KR 20090090091A KR 101156658 B1 KR101156658 B1 KR 101156658B1
Authority
KR
South Korea
Prior art keywords
film
transmittance
light
translucent
exposure light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020090090091A
Other languages
English (en)
Korean (ko)
Other versions
KR20100035599A (ko
Inventor
마사루 미츠이
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20100035599A publication Critical patent/KR20100035599A/ko
Application granted granted Critical
Publication of KR101156658B1 publication Critical patent/KR101156658B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090090091A 2008-09-26 2009-09-23 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법 Active KR101156658B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-247271 2008-09-26
JP2008247271A JP5121020B2 (ja) 2008-09-26 2008-09-26 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110086572A Division KR101543288B1 (ko) 2008-09-26 2011-08-29 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법

Publications (2)

Publication Number Publication Date
KR20100035599A KR20100035599A (ko) 2010-04-05
KR101156658B1 true KR101156658B1 (ko) 2012-06-14

Family

ID=42209448

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020090090091A Active KR101156658B1 (ko) 2008-09-26 2009-09-23 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법
KR1020110086572A Active KR101543288B1 (ko) 2008-09-26 2011-08-29 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110086572A Active KR101543288B1 (ko) 2008-09-26 2011-08-29 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법

Country Status (3)

Country Link
JP (1) JP5121020B2 (https=)
KR (2) KR101156658B1 (https=)
TW (1) TWI465838B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5917020B2 (ja) * 2010-06-29 2016-05-11 Hoya株式会社 マスクブランクおよび多階調マスクの製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6891099B2 (ja) * 2017-01-16 2021-06-18 Hoya株式会社 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
CN112015044A (zh) * 2019-05-28 2020-12-01 爱发科成膜株式会社 掩模坯、半色调掩模、制造方法、制造装置
JP6993530B1 (ja) * 2020-12-25 2022-01-13 株式会社エスケーエレクトロニクス フォトマスク、フォトマスクの製造方法、表示装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070083210A (ko) * 2006-02-20 2007-08-23 호야 가부시키가이샤 4계조 포토마스크의 제조방법, 및 이에 이용되는포토마스크 블랭크
KR20070098750A (ko) * 2006-03-30 2007-10-05 주식회사 에스앤에스텍 블랭크마스크, 이를 이용한 투과 제어 슬릿 마스크 및 그제조방법
KR20080031535A (ko) * 2006-10-04 2008-04-10 주식회사 에스앤에스텍 그레이톤 블랭크 마스크와 그레이톤 포토마스크 및 그제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
KR0172790B1 (ko) * 1995-09-18 1999-03-20 김영환 위상반전 마스크 및 그 제조방법
JP4054951B2 (ja) * 2001-08-06 2008-03-05 信越化学工業株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
US7556892B2 (en) * 2004-03-31 2009-07-07 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
JP4933753B2 (ja) * 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4695964B2 (ja) * 2005-11-09 2011-06-08 アルバック成膜株式会社 グレートーンマスク及びその製造方法
TWI569092B (zh) * 2005-12-26 2017-02-01 Hoya Corp A mask substrate and a mask for manufacturing a flat panel display device
JP4570632B2 (ja) * 2006-02-20 2010-10-27 Ｈｏｙａ株式会社 ４階調フォトマスクの製造方法、及びフォトマスクブランク加工品
JP4848932B2 (ja) * 2006-11-13 2011-12-28 大日本印刷株式会社 プロキシミティ露光用階調マスク
JP5352451B2 (ja) * 2007-10-12 2013-11-27 アルバック成膜株式会社 グレートーンマスクの製造方法
JP5219201B2 (ja) * 2008-07-31 2013-06-26 Ｈｏｙａ株式会社 フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070083210A (ko) * 2006-02-20 2007-08-23 호야 가부시키가이샤 4계조 포토마스크의 제조방법, 및 이에 이용되는포토마스크 블랭크
KR20070098750A (ko) * 2006-03-30 2007-10-05 주식회사 에스앤에스텍 블랭크마스크, 이를 이용한 투과 제어 슬릿 마스크 및 그제조방법
KR20080031535A (ko) * 2006-10-04 2008-04-10 주식회사 에스앤에스텍 그레이톤 블랭크 마스크와 그레이톤 포토마스크 및 그제조방법

Also Published As

Publication number Publication date
TW201017328A (en) 2010-05-01
KR20100035599A (ko) 2010-04-05
JP5121020B2 (ja) 2013-01-16
TWI465838B (zh) 2014-12-21
JP2010078923A (ja) 2010-04-08
KR101543288B1 (ko) 2015-08-11
KR20110111342A (ko) 2011-10-11

Similar Documents

Publication Publication Date Title
JP5839744B2 (ja) フラットパネルディスプレイ製造用フォトマスクの製造方法、およびフラットパネルディスプレイの製造方法
KR101887323B1 (ko) 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
JP4490980B2 (ja) ハーフトーンブランクス
TW201640216A (zh) 遮罩基底、相移遮罩及相移遮罩之製造方法、與半導體裝置之製造方法
KR101333931B1 (ko) 포토마스크 블랭크, 포토마스크 및 포토마스크의 제조방법
CN101268417A (zh) 具有灰度的光掩模及其制造方法
KR20180026766A (ko) 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP2012230379A (ja) ブランクマスク及びフォトマスク
JP2011215226A (ja) 多階調フォトマスク、多階調フォトマスクの製造方法、多階調フォトマスク用ブランク及びパターン転写方法
WO2007099910A1 (ja) フォトマスクブランク及びフォトマスク、並びにそれらの製造方法
TWI827878B (zh) 光罩基底、相偏移光罩及半導體裝置之製造方法
KR101156658B1 (ko) 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법
US12529953B2 (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
JP2009271213A (ja) 多階調フォトマスク及びその製造方法、並びにパターン転写方法
KR20110010071A (ko) 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법
JP2012003152A (ja) 多階調フォトマスク、多階調フォトマスク用ブランク及びパターン転写方法
JP5219201B2 (ja) フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法
KR20160024204A (ko) 평판 디스플레이용 블랭크 마스크 및 이를 이용한 포토마스크 제조 방법
JP5196098B2 (ja) 階調をもつフォトマスクおよびその製造方法
JP2008052120A (ja) マスクブランク及びフォトマスク並びにこれらの製造方法
CN101310220B (zh) 掩模底板及光掩模
JP5219200B2 (ja) フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20150518

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160517

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20170522

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20180517

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20190515

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000