JP5121020B2 - 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法 - Google Patents

多階調フォトマスク、フォトマスクブランク、及びパターン転写方法 Download PDF

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JP5121020B2
JP5121020B2 JP2008247271A JP2008247271A JP5121020B2 JP 5121020 B2 JP5121020 B2 JP 5121020B2 JP 2008247271 A JP2008247271 A JP 2008247271A JP 2008247271 A JP2008247271 A JP 2008247271A JP 5121020 B2 JP5121020 B2 JP 5121020B2
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film
semi
line
transmittance
transparent
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JP2008247271A
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English (en)
Japanese (ja)
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JP2010078923A5 (https=
JP2010078923A (ja
Inventor
勝 三井
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Hoya Corp
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Hoya Corp
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2008247271A priority Critical patent/JP5121020B2/ja
Priority to KR1020090090091A priority patent/KR101156658B1/ko
Priority to TW098132359A priority patent/TWI465838B/zh
Publication of JP2010078923A publication Critical patent/JP2010078923A/ja
Priority to KR1020110086572A priority patent/KR101543288B1/ko
Publication of JP2010078923A5 publication Critical patent/JP2010078923A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008247271A 2008-09-26 2008-09-26 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法 Active JP5121020B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008247271A JP5121020B2 (ja) 2008-09-26 2008-09-26 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法
KR1020090090091A KR101156658B1 (ko) 2008-09-26 2009-09-23 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법
TW098132359A TWI465838B (zh) 2008-09-26 2009-09-24 多色調光罩、光罩基底及圖案轉印方法
KR1020110086572A KR101543288B1 (ko) 2008-09-26 2011-08-29 다계조 포토마스크, 포토마스크 블랭크 및 패턴 전사방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008247271A JP5121020B2 (ja) 2008-09-26 2008-09-26 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法

Publications (3)

Publication Number Publication Date
JP2010078923A JP2010078923A (ja) 2010-04-08
JP2010078923A5 JP2010078923A5 (https=) 2011-10-13
JP5121020B2 true JP5121020B2 (ja) 2013-01-16

Family

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Family Applications (1)

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JP2008247271A Active JP5121020B2 (ja) 2008-09-26 2008-09-26 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法

Country Status (3)

Country Link
JP (1) JP5121020B2 (https=)
KR (2) KR101156658B1 (https=)
TW (1) TWI465838B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5917020B2 (ja) * 2010-06-29 2016-05-11 Hoya株式会社 マスクブランクおよび多階調マスクの製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6891099B2 (ja) * 2017-01-16 2021-06-18 Hoya株式会社 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
CN112015044A (zh) * 2019-05-28 2020-12-01 爱发科成膜株式会社 掩模坯、半色调掩模、制造方法、制造装置
JP6993530B1 (ja) * 2020-12-25 2022-01-13 株式会社エスケーエレクトロニクス フォトマスク、フォトマスクの製造方法、表示装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
KR0172790B1 (ko) * 1995-09-18 1999-03-20 김영환 위상반전 마스크 및 그 제조방법
JP4054951B2 (ja) * 2001-08-06 2008-03-05 信越化学工業株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
US7556892B2 (en) * 2004-03-31 2009-07-07 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
JP4933753B2 (ja) * 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4695964B2 (ja) * 2005-11-09 2011-06-08 アルバック成膜株式会社 グレートーンマスク及びその製造方法
TWI569092B (zh) * 2005-12-26 2017-02-01 Hoya Corp A mask substrate and a mask for manufacturing a flat panel display device
JP4570632B2 (ja) * 2006-02-20 2010-10-27 Ｈｏｙａ株式会社 ４階調フォトマスクの製造方法、及びフォトマスクブランク加工品
TWI432885B (zh) * 2006-02-20 2014-04-01 Ｈｏｙａ股份有限公司 四階光罩製造方法及使用此種方法中之光罩坯料板
KR100886802B1 (ko) * 2006-03-30 2009-03-04 주식회사 에스앤에스텍 블랭크마스크, 이를 이용한 투과 제어 슬릿 마스크 및 그제조방법
KR101329525B1 (ko) * 2006-10-04 2013-11-14 주식회사 에스앤에스텍 그레이톤 블랭크 마스크와 그레이톤 포토마스크 및 그제조방법
JP4848932B2 (ja) * 2006-11-13 2011-12-28 大日本印刷株式会社 プロキシミティ露光用階調マスク
JP5352451B2 (ja) * 2007-10-12 2013-11-27 アルバック成膜株式会社 グレートーンマスクの製造方法
JP5219201B2 (ja) * 2008-07-31 2013-06-26 Ｈｏｙａ株式会社 フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法

Also Published As

Publication number Publication date
TW201017328A (en) 2010-05-01
KR101156658B1 (ko) 2012-06-14
KR20100035599A (ko) 2010-04-05
TWI465838B (zh) 2014-12-21
JP2010078923A (ja) 2010-04-08
KR101543288B1 (ko) 2015-08-11
KR20110111342A (ko) 2011-10-11

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