KR101154272B1 - 초소형 전자기계 시스템의 생산에 사용되는 기판의 등온배치 처리를 달성하기위한 시스템 및 방법 - Google Patents

초소형 전자기계 시스템의 생산에 사용되는 기판의 등온배치 처리를 달성하기위한 시스템 및 방법 Download PDF

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Publication number
KR101154272B1
KR101154272B1 KR1020077013579A KR20077013579A KR101154272B1 KR 101154272 B1 KR101154272 B1 KR 101154272B1 KR 1020077013579 A KR1020077013579 A KR 1020077013579A KR 20077013579 A KR20077013579 A KR 20077013579A KR 101154272 B1 KR101154272 B1 KR 101154272B1
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South Korea
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substrate
process chamber
housing
substrates
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Korean (ko)
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KR20070086275A (ko
Inventor
로버트 더블유. 그랜트
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프라이맥스 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H10P72/123—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/14—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/14—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • H10P72/145—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls characterised by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3411—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H10P72/3412—Batch transfer of wafers

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  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Measuring Fluid Pressure (AREA)
KR1020077013579A 2004-11-18 2005-11-18 초소형 전자기계 시스템의 생산에 사용되는 기판의 등온배치 처리를 달성하기위한 시스템 및 방법 Expired - Lifetime KR101154272B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/991,554 2004-11-18
US10/991,554 US7771563B2 (en) 2004-11-18 2004-11-18 Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems
PCT/US2005/042232 WO2006055937A2 (en) 2004-11-18 2005-11-18 Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical systems

Publications (2)

Publication Number Publication Date
KR20070086275A KR20070086275A (ko) 2007-08-27
KR101154272B1 true KR101154272B1 (ko) 2012-06-13

Family

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KR1020077013579A Expired - Lifetime KR101154272B1 (ko) 2004-11-18 2005-11-18 초소형 전자기계 시스템의 생산에 사용되는 기판의 등온배치 처리를 달성하기위한 시스템 및 방법

Country Status (7)

Country Link
US (1) US7771563B2 (https=)
EP (1) EP1859077B1 (https=)
JP (1) JP4912316B2 (https=)
KR (1) KR101154272B1 (https=)
AT (1) ATE499702T1 (https=)
DE (1) DE602005026581D1 (https=)
WO (1) WO2006055937A2 (https=)

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US8639365B2 (en) * 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US8639489B2 (en) 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US20070282480A1 (en) * 2003-11-10 2007-12-06 Pannese Patrick D Methods and systems for controlling a semiconductor fabrication process
JP4698354B2 (ja) * 2005-09-15 2011-06-08 株式会社リコー Ｃｖｄ装置
KR101874901B1 (ko) 2011-12-07 2018-07-06 삼성전자주식회사 기판 건조 장치 및 방법
CN104681426A (zh) * 2013-11-29 2015-06-03 细美事有限公司 基板处理装置及基板处理方法
US10347516B2 (en) 2014-11-11 2019-07-09 Applied Materials, Inc. Substrate transfer chamber
US10945313B2 (en) * 2015-05-27 2021-03-09 Applied Materials, Inc. Methods and apparatus for a microwave batch curing process
KR102358561B1 (ko) * 2017-06-08 2022-02-04 삼성전자주식회사 기판 처리 장치 및 집적회로 소자 제조 장치
KR102238028B1 (ko) * 2020-10-22 2021-04-08 주식회사 한화 기판 처리용 밀폐형 열처리 장치

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US6164963A (en) 1997-03-07 2000-12-26 Weaver; Robert A. Semiconductor furnace processing vessel base
US20030000476A1 (en) 2001-06-28 2003-01-02 Hitachi Kokusai Electric Inc. Substrate processing apparatus, conveying unit thereof, and semiconductor device fabricating Method

Also Published As

Publication number Publication date
KR20070086275A (ko) 2007-08-27
EP1859077B1 (en) 2011-02-23
WO2006055937A8 (en) 2007-08-23
WO2006055937A2 (en) 2006-05-26
DE602005026581D1 (de) 2011-04-07
US20060102287A1 (en) 2006-05-18
EP1859077A2 (en) 2007-11-28
ATE499702T1 (de) 2011-03-15
JP4912316B2 (ja) 2012-04-11
WO2006055937A3 (en) 2007-06-07
JP2008521258A (ja) 2008-06-19
US7771563B2 (en) 2010-08-10
EP1859077A4 (en) 2010-03-31

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