KR101123188B1 - 성막용 타깃 및 위상변환 마스크 블랭크의 제조방법 - Google Patents
성막용 타깃 및 위상변환 마스크 블랭크의 제조방법 Download PDFInfo
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- KR101123188B1 KR101123188B1 KR1020050027017A KR20050027017A KR101123188B1 KR 101123188 B1 KR101123188 B1 KR 101123188B1 KR 1020050027017 A KR1020050027017 A KR 1020050027017A KR 20050027017 A KR20050027017 A KR 20050027017A KR 101123188 B1 KR101123188 B1 KR 101123188B1
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- phase shift
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- mask blank
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- 230000010363 phase shift Effects 0.000 title claims abstract description 113
- 238000000151 deposition Methods 0.000 title claims description 14
- 238000002360 preparation method Methods 0.000 title claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 41
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 239000002356 single layer Substances 0.000 claims abstract description 20
- 238000002834 transmittance Methods 0.000 claims abstract description 19
- 239000000470 constituent Substances 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 33
- 239000011733 molybdenum Substances 0.000 claims description 33
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000011651 chromium Substances 0.000 description 35
- 229910052804 chromium Inorganic materials 0.000 description 28
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000000126 substance Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 150000002736 metal compounds Chemical class 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 229910016006 MoSi Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910015868 MSiO Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- -1 nitride carbides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F13/00—Bandages or dressings; Absorbent pads
- A61F13/02—Adhesive bandages or dressings
- A61F13/0203—Adhesive bandages or dressings with fluid retention members
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F13/00—Bandages or dressings; Absorbent pads
- A61F2013/00361—Plasters
- A61F2013/00795—Plasters special helping devices
- A61F2013/00842—Plasters special helping devices for tearing off dressing of desired size
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Vascular Medicine (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (6)
- 제어되는 위상과 투과율을 가지는 단층 또는 다층의 위상변환막 및 투명 기판을 포함하고, 상기 위상변환막의 적어도 한 층의 구성 원소로서 규소, 몰리브덴 및 지르코늄 원소를 동시에 함유하는, 하프톤 위상변환 마스크 블랭크의 위상변환막을 성막하기 위한 성막용 타깃으로서,상기 타깃은 지르코늄과 몰리브덴의 적어도 두 원소를 포함하고, 지르코늄과 몰리브덴의 함유 비율 Zr/Mo가 몰비율로 0.05 와 5 사이인 것을 특징으로 하는 성막용 타깃.
- 제어되는 위상과 투과율을 가지는 단층 또는 다층의 위상변환막 및 투명 기판을 포함하고, 상기 위상변환막의 적어도 한 층의 구성 원소로서 규소, 몰리브덴 및 지르코늄 원소를 동시에 함유하는, 하프톤 위상변환 마스크 블랭크의 위상변환막을 성막하기 위한 성막용 타깃으로서,상기 타깃은 규소, 몰리브덴, 지르코늄의 적어도 세 원소를 포함하고, 지르코늄과 몰리브덴의 함유 비율 Zr/Mo가 몰비율로 0.05 와 5 사이인 것을 특징으로 하는 성막용 타깃.
- 제 2항에 있어서, 상기 타깃은 80mol% 내지 97mol%의 규소를 포함하는 것을 특징으로 하는 성막용 타깃.
- 제어되는 위상과 투과율을 가지는 단층 또는 다층의 위상변환막 및 투명 기판을 포함하고, 상기 위상변환막의 적어도 한 층의 구성 원소로서 규소, 몰리브덴 및 지르코늄 원소를 동시에 함유하는, 하프톤 위상변환 마스크 블랭크의 제조방법으로서,상기 방법은, 동일 챔버에서 제 1항의 성막용 타깃과 규소계 타깃을 성막하는 단계, 및 양 타깃을 동시에 스퍼터 방전함으로써 상기 위상변환막의 적어도 한 층을 성막하는 단계를 포함하는 것을 특징으로 하는 하프톤 위상변환 마스크 블랭크의 제조방법.
- 제어되는 위상과 투과율을 가지는 단층 또는 다층의 위상변환막 및 투명 기판을 포함하고, 상기 위상변환막의 적어도 한 층의 구성 원소로서 규소, 몰리브덴 및 지르코늄을 동시에 함유하는, 하프톤 위상변환 마스크 블랭크의 제조방법으로서,상기 방법은, 동일 챔버에서 80mol% 내지 99mol%의 규소와 지르코늄을 함유하는 성막용 타깃과 몰리브덴계 타깃을 성막하는 단계, 및 양 타깃을 동시에 스퍼터 방전함으로써 상기 위상변환막의 적어도 한 층을 성막하는 단계를 포함하는 것을 특징으로 하는 하프톤 위상변환 마스크 블랭크의 제조방법.
- 제어되는 위상과 투과율을 가지는 단층 또는 다층의 위상변환막 및 투명 기판을 포함하고, 상기 위상변환막의 적어도 한 층의 구성 원소로서 규소, 몰리브덴 및 지르코늄을 동시에 함유하는, 하프톤 위상변환 마스크 블랭크의 제조방법으로서,상기 방법은, 동일 챔버에서 80mol% 내지 98mol%의 규소와 몰리브덴을 함유하는 성막용 타깃과 지르코늄계 타깃을 성막하는 단계, 및 양 타깃을 동시에 스퍼터 방전함으로써 상기 위상변환막의 적어도 한 층을 성막하는 단계를 포함하는 것을 특징으로 하는 하프톤 위상변환 마스크 블랭크의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004102288A JP2005284216A (ja) | 2004-03-31 | 2004-03-31 | 成膜用ターゲット及び位相シフトマスクブランクの製造方法 |
JPJP-P-2004-00102288 | 2004-03-31 |
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KR20060045075A KR20060045075A (ko) | 2006-05-16 |
KR101123188B1 true KR101123188B1 (ko) | 2012-06-05 |
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US (2) | US7598004B2 (ko) |
EP (1) | EP1582921B1 (ko) |
JP (1) | JP2005284216A (ko) |
KR (1) | KR101123188B1 (ko) |
DE (1) | DE602005014163D1 (ko) |
TW (1) | TWI354184B (ko) |
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FR2881757B1 (fr) * | 2005-02-08 | 2007-03-30 | Saint Gobain | Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium |
JP2008130106A (ja) | 2006-11-16 | 2008-06-05 | Hitachi Ltd | 熱アシスト磁気記録ヘッド支持機構 |
EP1970465B1 (en) * | 2007-03-13 | 2013-08-21 | JDS Uniphase Corporation | Method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index |
CN102834773B (zh) * | 2010-04-09 | 2016-04-06 | Hoya株式会社 | 相移掩模坯料及其制造方法、以及相移掩模 |
JP5690023B2 (ja) | 2012-07-13 | 2015-03-25 | Hoya株式会社 | マスクブランク及び位相シフトマスクの製造方法 |
KR102416957B1 (ko) | 2015-11-06 | 2022-07-05 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
US20190040516A1 (en) * | 2016-02-15 | 2019-02-07 | Hoya Corporation | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
JP7490485B2 (ja) | 2020-07-27 | 2024-05-27 | Hoya株式会社 | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 |
WO2022230694A1 (ja) * | 2021-04-30 | 2022-11-03 | 株式会社ニコン | 位相シフトマスクブランクス、位相シフトマスク、露光方法、及びデバイスの製造方法 |
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JP2002014458A (ja) * | 2000-06-30 | 2002-01-18 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスクおよびブランク |
JP2003315977A (ja) * | 2002-04-25 | 2003-11-06 | Hoya Corp | リソグラフィーマスクブランクの製造方法及び製造装置 |
Family Cites Families (8)
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WO1991002102A1 (en) | 1989-08-01 | 1991-02-21 | Asahi Glass Company Ltd. | Film based on silicon dioxide and production thereof |
JP3064769B2 (ja) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法 |
US5897976A (en) | 1996-05-20 | 1999-04-27 | E. I. Du Pont De Nemours And Company | Attenuating embedded phase shift photomask blanks |
US5935735A (en) | 1996-10-24 | 1999-08-10 | Toppan Printing Co., Ltd. | Halftone phase shift mask, blank for the same, and methods of manufacturing these |
JPH11184067A (ja) * | 1997-12-19 | 1999-07-09 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
JP2002090977A (ja) * | 2000-09-12 | 2002-03-27 | Hoya Corp | 位相シフトマスクブランク、フォトマスクブランク、並びにそれらの製造装置及び製造方法 |
JP3722029B2 (ja) * | 2000-09-12 | 2005-11-30 | Hoya株式会社 | 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法 |
JP3988041B2 (ja) * | 2002-10-08 | 2007-10-10 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びその製造方法 |
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2004
- 2004-03-31 JP JP2004102288A patent/JP2005284216A/ja active Pending
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2005
- 2005-03-30 TW TW094110085A patent/TWI354184B/zh active
- 2005-03-30 US US11/093,297 patent/US7598004B2/en active Active
- 2005-03-31 DE DE602005014163T patent/DE602005014163D1/de active Active
- 2005-03-31 EP EP05252048A patent/EP1582921B1/en active Active
- 2005-03-31 KR KR1020050027017A patent/KR101123188B1/ko active IP Right Grant
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002014458A (ja) * | 2000-06-30 | 2002-01-18 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスクおよびブランク |
JP2003315977A (ja) * | 2002-04-25 | 2003-11-06 | Hoya Corp | リソグラフィーマスクブランクの製造方法及び製造装置 |
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US20090057143A1 (en) | 2009-03-05 |
US7598004B2 (en) | 2009-10-06 |
JP2005284216A (ja) | 2005-10-13 |
EP1582921A3 (en) | 2007-05-30 |
US20050217988A1 (en) | 2005-10-06 |
TW200602804A (en) | 2006-01-16 |
KR20060045075A (ko) | 2006-05-16 |
EP1582921A2 (en) | 2005-10-05 |
DE602005014163D1 (de) | 2009-06-10 |
EP1582921B1 (en) | 2009-04-29 |
TWI354184B (en) | 2011-12-11 |
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