KR101107393B1 - 용량 결합형 ｒｆ 플라즈마 반응기 - Google Patents

용량 결합형 ｒｆ 플라즈마 반응기 Download PDF

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Publication number
KR101107393B1
KR101107393B1 KR1020077007856A KR20077007856A KR101107393B1 KR 101107393 B1 KR101107393 B1 KR 101107393B1 KR 1020077007856 A KR1020077007856 A KR 1020077007856A KR 20077007856 A KR20077007856 A KR 20077007856A KR 101107393 B1 KR101107393 B1 KR 101107393B1
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South Korea
Prior art keywords
impedance
conversion circuit
plasma
delete delete
metal plate
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Expired - Fee Related
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KR1020077007856A
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English (en)
Korean (ko)
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KR20070099526A (ko
Inventor
안디 베링거
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오리콘 솔라 아게, 트루바흐
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Multi-Conductor Connections (AREA)
KR1020077007856A 2004-11-12 2005-11-11 용량 결합형 ｒｆ 플라즈마 반응기 Expired - Fee Related KR101107393B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62778404P 2004-11-12 2004-11-12
US60/627,784 2004-11-12
PCT/CH2005/000669 WO2006050632A2 (en) 2004-11-12 2005-11-11 Impedance matching of a capacitively coupled rf plasma reactor suitable for large area substrates

Publications (2)

Publication Number Publication Date
KR20070099526A KR20070099526A (ko) 2007-10-09
KR101107393B1 true KR101107393B1 (ko) 2012-01-19

Family

ID=36218432

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077007856A Expired - Fee Related KR101107393B1 (ko) 2004-11-12 2005-11-11 용량 결합형 ｒｆ 플라즈마 반응기

Country Status (10)

Country Link
US (1) US20070252529A1 (https=)
EP (1) EP1812949B1 (https=)
JP (1) JP5086092B2 (https=)
KR (1) KR101107393B1 (https=)
CN (1) CN101057310B (https=)
AT (1) ATE473513T1 (https=)
AU (1) AU2005304253B8 (https=)
DE (1) DE602005022221D1 (https=)
TW (1) TW200625396A (https=)
WO (1) WO2006050632A2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915613B1 (ko) * 2007-06-26 2009-09-07 삼성전자주식회사 펄스 플라즈마 매칭시스템 및 그 방법
TWI440405B (zh) * 2007-10-22 2014-06-01 New Power Plasma Co Ltd 電容式耦合電漿反應器
KR100979186B1 (ko) 2007-10-22 2010-08-31 다이나믹솔라디자인 주식회사 용량 결합 플라즈마 반응기
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US8578879B2 (en) * 2009-07-29 2013-11-12 Applied Materials, Inc. Apparatus for VHF impedance match tuning
WO2011026126A2 (en) * 2009-08-31 2011-03-03 Lam Research Corporation A multi-peripheral ring arrangement for performing plasma confinement
CN102487572B (zh) * 2010-12-02 2015-06-24 理想能源设备(上海)有限公司 等离子加工装置
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
CN102686004B (zh) * 2011-03-17 2015-05-13 中微半导体设备(上海)有限公司 用于等离子体发生器的可控制谐波的射频系统
US8932429B2 (en) * 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
CN102695353B (zh) * 2012-05-31 2015-08-12 浙江工商大学 利用高电压产生气体等离子放电基本单元及反应器
WO2014036013A2 (en) 2012-08-27 2014-03-06 Aerovironment, Inc. Portable electric vehicle supply equipment
CN103794895B (zh) * 2012-10-30 2016-02-24 新奥光伏能源有限公司 一种射频电源接入器
CN103388134B (zh) * 2013-07-22 2016-05-18 北京工业大学 容性耦合等离子体增强化学气相沉积制备厚度均匀薄膜的方法
CN103454489B (zh) * 2013-09-12 2016-09-21 清华大学 匹配网络的损耗功率标定方法及系统
US20180175819A1 (en) * 2016-12-16 2018-06-21 Lam Research Corporation Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor
US10536130B2 (en) * 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
US20220068610A1 (en) * 2018-12-21 2022-03-03 Evatec Ag Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate
US11107661B2 (en) * 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030098127A1 (en) * 2001-11-27 2003-05-29 Alps Electric Co., Ltd. Plasma processing apparatus
US20040035365A1 (en) * 2002-07-12 2004-02-26 Yohei Yamazawa Plasma processing apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3143594A (en) * 1960-07-13 1964-08-04 Samuel E Derby Demountable multiple stage ultra-high vacuum system
US3471396A (en) * 1967-04-10 1969-10-07 Ibm R.f. cathodic sputtering apparatus having an electrically conductive housing
DE2939167A1 (de) * 1979-08-21 1981-04-02 Coulter Systems Corp., Bedford, Mass. Vorrichtung und verfahren zur leistungszufuehrung an eine von dem entladungsplasma einer zerstaeubungsvorrichtung gebildeten last
JPH0354825A (ja) * 1989-07-21 1991-03-08 Tokyo Electron Ltd プラズマ処理装置
JPH0685542A (ja) * 1992-09-03 1994-03-25 Hitachi Metals Ltd 周波数可変マイクロ波発振器
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
JP2002316040A (ja) * 2001-04-24 2002-10-29 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP4216054B2 (ja) * 2001-11-27 2009-01-28 アルプス電気株式会社 プラズマ処理装置及びその運転方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030098127A1 (en) * 2001-11-27 2003-05-29 Alps Electric Co., Ltd. Plasma processing apparatus
US20040035365A1 (en) * 2002-07-12 2004-02-26 Yohei Yamazawa Plasma processing apparatus

Also Published As

Publication number Publication date
KR20070099526A (ko) 2007-10-09
AU2005304253A1 (en) 2006-05-18
EP1812949B1 (en) 2010-07-07
ATE473513T1 (de) 2010-07-15
DE602005022221D1 (de) 2010-08-19
TW200625396A (en) 2006-07-16
AU2005304253B2 (en) 2010-12-23
US20070252529A1 (en) 2007-11-01
AU2005304253B8 (en) 2011-01-20
JP2008520091A (ja) 2008-06-12
CN101057310A (zh) 2007-10-17
JP5086092B2 (ja) 2012-11-28
WO2006050632A2 (en) 2006-05-18
WO2006050632A3 (en) 2006-07-27
CN101057310B (zh) 2010-11-03
EP1812949A2 (en) 2007-08-01

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