KR101102257B1 - 집적 회로에서 다중 공급 전압들로의 디지털 신호들의 멀티플렉싱 장치 및 멀티플렉싱 방법 - Google Patents

집적 회로에서 다중 공급 전압들로의 디지털 신호들의 멀티플렉싱 장치 및 멀티플렉싱 방법 Download PDF

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KR101102257B1
KR101102257B1 KR1020067004544A KR20067004544A KR101102257B1 KR 101102257 B1 KR101102257 B1 KR 101102257B1 KR 1020067004544 A KR1020067004544 A KR 1020067004544A KR 20067004544 A KR20067004544 A KR 20067004544A KR 101102257 B1 KR101102257 B1 KR 101102257B1
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South Korea
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digital signal
voltage
supply voltage
input
output terminal
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Korean (ko)
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KR20060079848A (ko
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크리스토퍼 케이. 춘
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H03K17/005—Switching arrangements with several input- or output terminals with several inputs only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

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  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Analogue/Digital Conversion (AREA)
KR1020067004544A 2003-09-05 2004-08-24 집적 회로에서 다중 공급 전압들로의 디지털 신호들의 멀티플렉싱 장치 및 멀티플렉싱 방법 Expired - Fee Related KR101102257B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/656,051 US6856173B1 (en) 2003-09-05 2003-09-05 Multiplexing of digital signals at multiple supply voltages in an integrated circuit
US10/656,051 2003-09-05
PCT/US2004/027499 WO2005027348A1 (en) 2003-09-05 2004-08-24 Multiplexing of digital signals at multiple supply voltages in an integrated circuit

Publications (2)

Publication Number Publication Date
KR20060079848A KR20060079848A (ko) 2006-07-06
KR101102257B1 true KR101102257B1 (ko) 2012-01-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067004544A Expired - Fee Related KR101102257B1 (ko) 2003-09-05 2004-08-24 집적 회로에서 다중 공급 전압들로의 디지털 신호들의 멀티플렉싱 장치 및 멀티플렉싱 방법

Country Status (6)

Country Link
US (1) US6856173B1 (enExample)
JP (1) JP4675897B2 (enExample)
KR (1) KR101102257B1 (enExample)
CN (1) CN100574106C (enExample)
TW (1) TWI344688B (enExample)
WO (1) WO2005027348A1 (enExample)

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FR2872629B1 (fr) * 2004-06-30 2007-07-13 St Microelectronics Sa Circuit integre ayant une borne d'entree/sortie configurable dans une gamme de tension determinee
US7392419B2 (en) * 2005-06-30 2008-06-24 International Business Machines Corporation System and method automatically selecting intermediate power supply voltages for intermediate level shifters
US8106705B2 (en) * 2006-05-05 2012-01-31 Synopsys, Inc. Control circuit for PVT conditions of a module
US12073272B2 (en) 2006-11-18 2024-08-27 Rfmicron, Inc. Generating a response by a radio frequency identification (RFID) tag within a field strength shell of interest
US10164611B2 (en) 2006-11-18 2018-12-25 Rfmicron, Inc. Method and apparatus for sensing environmental conditions
US10149177B2 (en) 2006-11-18 2018-12-04 Rfmicron, Inc. Wireless sensor including an RF signal circuit
US10715209B2 (en) 2006-11-18 2020-07-14 RF Micron, Inc. Computing device for processing environmental sensed conditions
US12391076B2 (en) 2006-11-18 2025-08-19 Rfmicron, Inc. Pressure based wireless sensor and applications thereof
US11817637B2 (en) 2006-11-18 2023-11-14 Rfmicron, Inc. Radio frequency identification (RFID) moisture tag(s) and sensors with extended sensing via capillaries
US7498860B2 (en) * 2007-03-27 2009-03-03 Agere Systems Inc. Buffer circuit having multiplexed voltage level translation
US7808274B2 (en) * 2007-12-28 2010-10-05 Semiconductor Components Industries, Llc Monolithically integrated multiplexer-translator-demultiplexer circuit and method
US7541834B1 (en) 2008-04-15 2009-06-02 International Business Machines Corporation System and the methods of managing a set of programmable fuses on an integrated circuit
US8217700B1 (en) * 2008-07-01 2012-07-10 Cypress Semiconductor Corporation Multifunction input/output circuit
CN101640529B (zh) * 2008-07-30 2011-08-24 盛群半导体股份有限公司 电压输入及输出电路
US7948293B1 (en) * 2009-01-27 2011-05-24 Xilinx, Inc. Synchronizing transitions between voltage sources used to provide a supply voltage
JP2010199640A (ja) * 2009-02-20 2010-09-09 Toshiba Corp 信号レベル変換回路
US7816948B1 (en) 2009-06-09 2010-10-19 Freescale Semiconductor, Inc. Voltage translator
US9214860B2 (en) * 2010-05-28 2015-12-15 Texas Instruments Incorporated Comparator multiplexing LDO and converted output to DC-DC converter circuitry
KR101889383B1 (ko) 2011-05-16 2018-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
JP5892852B2 (ja) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102011081989A1 (de) * 2011-09-01 2013-03-07 Robert Bosch Gmbh Verfahren zum Einlesen von Eingangssignalen
US9203411B2 (en) * 2012-10-11 2015-12-01 Qualcomm Incorporated Compact low power level shifter for dual rail
CN103856209B (zh) * 2012-12-05 2016-12-07 戴泺格集成电路（天津）有限公司 集成电路以及用于集成电路的方法
CN106030824B (zh) * 2014-03-27 2020-07-28 英特尔公司 利用具有隧穿场效应晶体管(tfet)的电路实施的复用器逻辑功能
US9292372B2 (en) 2014-05-18 2016-03-22 Freescale Semiconductor, Inc. Error pad for safety device
US10746682B2 (en) 2014-10-08 2020-08-18 Rfmicron, Inc. Wireless sensor with multiple sensing options
US9490813B2 (en) 2014-11-06 2016-11-08 Qualcomm Incorporated High-speed level-shifting multiplexer
CN104808739A (zh) 2015-04-24 2015-07-29 京东方科技集团股份有限公司 电源管理集成电路和显示装置
CN108255753B (zh) * 2016-12-28 2020-05-19 中芯国际集成电路制造(上海)有限公司 I/o接收机及其接收电路
US9762238B1 (en) * 2017-04-03 2017-09-12 Nxp Usa, Inc. Systems and methods for supplying reference voltage to multiple die of different technologies in a package
CN109428576B (zh) * 2017-08-29 2022-02-11 珠海全志科技股份有限公司 一种多路ip复用pad的控制系统
CN108363446A (zh) * 2018-03-13 2018-08-03 算丰科技（北京）有限公司 集成电路及其电源电压反馈电路和方法
US10355693B1 (en) * 2018-03-14 2019-07-16 Qualcomm Incorporated Extended GPIO (eGPIO)
CN109921780B (zh) * 2019-03-07 2023-03-14 上海申矽凌微电子科技有限公司 复用引脚电路
CN115589133B (zh) * 2022-12-12 2023-05-02 杰夫微电子（四川）有限公司 一种电源多路复用器及其控制方法

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Also Published As

Publication number Publication date
US20050052204A1 (en) 2005-03-10
TW200516754A (en) 2005-05-16
TWI344688B (en) 2011-07-01
WO2005027348A1 (en) 2005-03-24
CN100574106C (zh) 2009-12-23
US6856173B1 (en) 2005-02-15
KR20060079848A (ko) 2006-07-06
JP2007504752A (ja) 2007-03-01
JP4675897B2 (ja) 2011-04-27
CN1846354A (zh) 2006-10-11

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