KR101075130B1 - 증착 장치 - Google Patents

증착 장치 Download PDF

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Publication number
KR101075130B1
KR101075130B1 KR1020097005687A KR20097005687A KR101075130B1 KR 101075130 B1 KR101075130 B1 KR 101075130B1 KR 1020097005687 A KR1020097005687 A KR 1020097005687A KR 20097005687 A KR20097005687 A KR 20097005687A KR 101075130 B1 KR101075130 B1 KR 101075130B1
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KR
South Korea
Prior art keywords
vapor
vapor deposition
forming material
steam
film
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Expired - Fee Related
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KR1020097005687A
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English (en)
Korean (ko)
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KR20090045356A (ko
Inventor
신고 와타나베
유지 오노
코유 하세가와
마사히로 오가와
코우이치 혼다
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20090045356A publication Critical patent/KR20090045356A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K41/00—Spindle sealings
    • F16K41/10—Spindle sealings with diaphragm, e.g. shaped as bellows or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020097005687A 2006-09-29 2007-10-01 증착 장치 Expired - Fee Related KR101075130B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-269085 2006-09-29
JP2006269085A JP5173175B2 (ja) 2006-09-29 2006-09-29 蒸着装置

Publications (2)

Publication Number Publication Date
KR20090045356A KR20090045356A (ko) 2009-05-07
KR101075130B1 true KR101075130B1 (ko) 2011-10-19

Family

ID=39268526

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097005687A Expired - Fee Related KR101075130B1 (ko) 2006-09-29 2007-10-01 증착 장치

Country Status (6)

Country Link
US (1) US20100071623A1 (enExample)
JP (1) JP5173175B2 (enExample)
KR (1) KR101075130B1 (enExample)
DE (1) DE112007002217T5 (enExample)
TW (1) TW200835796A (enExample)
WO (1) WO2008041671A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5020650B2 (ja) * 2007-02-01 2012-09-05 東京エレクトロン株式会社 蒸着装置、蒸着方法および蒸着装置の製造方法
JP4847496B2 (ja) * 2008-07-29 2011-12-28 東京エレクトロン株式会社 蒸着源ユニット、蒸着方法、蒸着源ユニットの制御装置および成膜装置
EP2168644B1 (en) * 2008-09-29 2014-11-05 Applied Materials, Inc. Evaporator for organic materials and method for evaporating organic materials
KR101226518B1 (ko) 2008-09-30 2013-01-25 도쿄엘렉트론가부시키가이샤 증착 장치, 증착 방법 및 프로그램을 기억한 기억 매체
DE102010041376A1 (de) 2009-09-25 2011-04-07 Von Ardenne Anlagentechnik Gmbh Verdampfereinrichtung für eine Beschichtungsanlage und Verfahren zur Koverdampfung von mindestens zwei Substanzen
JP5452178B2 (ja) * 2009-11-12 2014-03-26 株式会社日立ハイテクノロジーズ 真空蒸着装置、真空蒸着方法、および、有機ｅｌ表示装置の製造方法
JP5473675B2 (ja) * 2010-03-01 2014-04-16 株式会社アルバック 薄膜形成装置
JP2014095131A (ja) * 2012-11-09 2014-05-22 Tokyo Electron Ltd 成膜装置
US10458014B2 (en) * 2015-03-24 2019-10-29 Siva Power, Inc. Thin-film deposition methods with thermal management of evaporation sources
US10593967B2 (en) * 2016-06-30 2020-03-17 Honeywell International Inc. Modulated thermal conductance thermal enclosure
KR102609612B1 (ko) * 2018-07-30 2023-12-05 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002322556A (ja) 2001-02-21 2002-11-08 Semiconductor Energy Lab Co Ltd 成膜方法及び成膜装置
WO2005098079A1 (en) 2004-03-22 2005-10-20 Eastman Kodak Company High thickness uniformity vaporization source
JP2006104497A (ja) 2004-10-01 2006-04-20 Hitachi Zosen Corp 蒸着装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0210476B1 (en) * 1985-08-01 1990-05-23 American Cyanamid Company Bubbler cylinder device
JP3734239B2 (ja) 1999-04-02 2006-01-11 キヤノン株式会社 有機膜真空蒸着用マスク再生方法及び装置
JP3705237B2 (ja) * 2001-09-05 2005-10-12 ソニー株式会社 有機電界発光素子を用いた表示装置の製造システムおよび製造方法
JP2004059992A (ja) * 2002-07-29 2004-02-26 Sony Corp 有機薄膜形成装置
JP4013859B2 (ja) * 2003-07-17 2007-11-28 富士電機ホールディングス株式会社 有機薄膜の製造装置
JP2005203248A (ja) * 2004-01-16 2005-07-28 Sony Corp 蒸着方法及び蒸着装置
JP4535908B2 (ja) * 2005-03-14 2010-09-01 日立造船株式会社 蒸着装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002322556A (ja) 2001-02-21 2002-11-08 Semiconductor Energy Lab Co Ltd 成膜方法及び成膜装置
WO2005098079A1 (en) 2004-03-22 2005-10-20 Eastman Kodak Company High thickness uniformity vaporization source
JP2006104497A (ja) 2004-10-01 2006-04-20 Hitachi Zosen Corp 蒸着装置

Also Published As

Publication number Publication date
WO2008041671A1 (fr) 2008-04-10
JP5173175B2 (ja) 2013-03-27
JP2008088489A (ja) 2008-04-17
KR20090045356A (ko) 2009-05-07
US20100071623A1 (en) 2010-03-25
TW200835796A (en) 2008-09-01
DE112007002217T5 (de) 2009-09-10

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