KR101071454B1 - 포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 및데이터베이스 - Google Patents

포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 및데이터베이스 Download PDF

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Publication number
KR101071454B1
KR101071454B1 KR1020080071085A KR20080071085A KR101071454B1 KR 101071454 B1 KR101071454 B1 KR 101071454B1 KR 1020080071085 A KR1020080071085 A KR 1020080071085A KR 20080071085 A KR20080071085 A KR 20080071085A KR 101071454 B1 KR101071454 B1 KR 101071454B1
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KR
South Korea
Prior art keywords
photomask
pattern
light
film
exposure
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KR1020080071085A
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English (en)
Korean (ko)
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KR20090010907A (ko
Inventor
고이찌로 요시다
가즈히사 이무라
Original Assignee
호야 가부시키가이샤
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Publication of KR20090010907A publication Critical patent/KR20090010907A/ko
Application granted granted Critical
Publication of KR101071454B1 publication Critical patent/KR101071454B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020080071085A 2007-07-23 2008-07-22 포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 및데이터베이스 KR101071454B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007191487 2007-07-23
JPJP-P-2007-00191487 2007-07-23

Publications (2)

Publication Number Publication Date
KR20090010907A KR20090010907A (ko) 2009-01-30
KR101071454B1 true KR101071454B1 (ko) 2011-10-10

Family

ID=40462633

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080071085A KR101071454B1 (ko) 2007-07-23 2008-07-22 포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 및데이터베이스

Country Status (4)

Country Link
JP (1) JP5363767B2 (zh)
KR (1) KR101071454B1 (zh)
CN (1) CN101382729B (zh)
TW (1) TWI446105B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI428688B (zh) * 2009-07-29 2014-03-01 Hoya Corp Method for manufacturing multi - modal mask and pattern transfer method
JP2012047732A (ja) * 2010-07-30 2012-03-08 Hoya Corp 透過率測定装置、フォトマスクの透過率検査装置、透過率検査方法、フォトマスク製造方法、パターン転写方法、フォトマスク製品
JP5866912B2 (ja) * 2011-09-16 2016-02-24 凸版印刷株式会社 パターンの描画条件導出方法及びパターン描画装置
CN102944971B (zh) * 2012-11-21 2015-03-18 京东方科技集团股份有限公司 掩膜版及光刻材料的曝光检测方法
CN105988285B (zh) * 2015-01-30 2019-09-27 中芯国际集成电路制造(上海)有限公司 测试掩模版以及测试方法
CN104765245A (zh) * 2015-04-10 2015-07-08 深圳市华星光电技术有限公司 一种灰色调掩膜及其制作方法
KR20200052487A (ko) * 2018-11-06 2020-05-15 삼성전자주식회사 반도체 소자의 제조 방법
CN111352294B (zh) * 2020-03-23 2021-10-22 昆山国显光电有限公司 掩模版、显示面板及掩模版的制备方法
JP6993530B1 (ja) 2020-12-25 2022-01-13 株式会社エスケーエレクトロニクス フォトマスク、フォトマスクの製造方法、表示装置の製造方法
CN114488703B (zh) * 2021-12-10 2024-04-12 武汉新芯集成电路制造有限公司 刻蚀方案的确定方法、测试掩模板以及刻蚀系统

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04328548A (ja) * 1991-04-26 1992-11-17 Nikon Corp フォトマスクの検査方法および装置
JP2530081B2 (ja) * 1992-01-09 1996-09-04 株式会社東芝 マスク検査装置
JP3085264B2 (ja) * 1997-11-10 2000-09-04 日本電気株式会社 フォトマスクならびにその製造方法
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
JP2002174604A (ja) * 2000-09-29 2002-06-21 Hoya Corp グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP2003043665A (ja) * 2001-08-02 2003-02-13 Sony Corp フォトマスクの製造方法
JP4064144B2 (ja) * 2002-04-16 2008-03-19 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP4021235B2 (ja) * 2002-04-16 2007-12-12 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP3993125B2 (ja) * 2003-04-01 2007-10-17 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法
JP3875648B2 (ja) * 2003-04-08 2007-01-31 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法
JP4294359B2 (ja) * 2003-04-08 2009-07-08 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
US7524593B2 (en) * 2005-08-12 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Exposure mask
KR20080037702A (ko) * 2005-09-21 2008-04-30 다이니폰 인사츠 가부시키가이샤 계조를 갖는 포토마스크 및 그 제조 방법
KR101082715B1 (ko) * 2005-12-26 2011-11-15 호야 가부시키가이샤 마스크 블랭크 및 포토마스크
JP5064116B2 (ja) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法

Also Published As

Publication number Publication date
TWI446105B (zh) 2014-07-21
KR20090010907A (ko) 2009-01-30
CN101382729B (zh) 2011-12-07
TW200912520A (en) 2009-03-16
JP2009048186A (ja) 2009-03-05
JP5363767B2 (ja) 2013-12-11
CN101382729A (zh) 2009-03-11

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