KR101068790B1 - 전자 빔 처리 장치 - Google Patents

전자 빔 처리 장치 Download PDF

Info

Publication number
KR101068790B1
KR101068790B1 KR1020067010458A KR20067010458A KR101068790B1 KR 101068790 B1 KR101068790 B1 KR 101068790B1 KR 1020067010458 A KR1020067010458 A KR 1020067010458A KR 20067010458 A KR20067010458 A KR 20067010458A KR 101068790 B1 KR101068790 B1 KR 101068790B1
Authority
KR
South Korea
Prior art keywords
cathode
gas
anode
chamber
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067010458A
Other languages
English (en)
Korean (ko)
Other versions
KR20060122875A (ko
Inventor
알렉산더 티. 데모스
하리 케이. 폰네칸티
준 자오
헬렌 알. 아르머
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20060122875A publication Critical patent/KR20060122875A/ko
Application granted granted Critical
Publication of KR101068790B1 publication Critical patent/KR101068790B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/025Electron guns using a discharge in a gas or a vapour as electron source
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/067Replacing parts of guns; Mutual adjustment of electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/077Electron guns using discharge in gases or vapours as electron sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248Components associated with the control of the tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
KR1020067010458A 2003-10-30 2004-10-29 전자 빔 처리 장치 Expired - Fee Related KR101068790B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/698,726 2003-10-30
US10/698,726 US7049606B2 (en) 2003-10-30 2003-10-30 Electron beam treatment apparatus

Publications (2)

Publication Number Publication Date
KR20060122875A KR20060122875A (ko) 2006-11-30
KR101068790B1 true KR101068790B1 (ko) 2011-09-30

Family

ID=34550733

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067010458A Expired - Fee Related KR101068790B1 (ko) 2003-10-30 2004-10-29 전자 빔 처리 장치

Country Status (6)

Country Link
US (1) US7049606B2 (enExample)
JP (1) JP5242055B2 (enExample)
KR (1) KR101068790B1 (enExample)
CN (1) CN1875452B (enExample)
TW (1) TWI318416B (enExample)
WO (1) WO2005043599A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
WO2008050321A2 (en) * 2006-10-24 2008-05-02 B-Nano Ltd. An interface, a methof for observing an object within a non-vacuum environment and a scanning electron microscope
KR100895630B1 (ko) * 2007-10-01 2009-05-06 박흥균 전자빔 방출장치
US8981294B2 (en) 2008-07-03 2015-03-17 B-Nano Ltd. Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
CN105143866A (zh) 2013-02-20 2015-12-09 B-纳米股份有限公司 扫描电子显微镜
KR102118604B1 (ko) * 2018-12-14 2020-06-03 박흥균 라인 형태의 이온빔 방출 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212059A (ja) * 1985-07-10 1987-01-21 Matsushita Electric Works Ltd 光放射電子管
US6429445B1 (en) * 1999-08-16 2002-08-06 Samsung Electronics Co., Ltd. Electron beam irradiating apparatus having cathode plate formed of non-metal conductive material
US20050003178A1 (en) * 2003-04-21 2005-01-06 Detert James W. Apparatus and methods for the attachment of materials to polyurethane foam, and articles made using them

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
US5003178A (en) 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5421888A (en) * 1992-05-12 1995-06-06 Sony Corporation Low pressure CVD apparatus comprising gas distribution collimator
US5302238A (en) * 1992-05-15 1994-04-12 Micron Technology, Inc. Plasma dry etch to produce atomically sharp asperities useful as cold cathodes
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US6607991B1 (en) * 1995-05-08 2003-08-19 Electron Vision Corporation Method for curing spin-on dielectric films utilizing electron beam radiation
JPH11176765A (ja) * 1997-12-05 1999-07-02 Samsung Electron Co Ltd イオン注入損傷を抑制した浅接合形成方法
US6037717A (en) * 1999-01-04 2000-03-14 Advanced Ion Technology, Inc. Cold-cathode ion source with a controlled position of ion beam
US6214183B1 (en) * 1999-01-30 2001-04-10 Advanced Ion Technology, Inc. Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials
JP2001023959A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US6407399B1 (en) * 1999-09-30 2002-06-18 Electron Vision Corporation Uniformity correction for large area electron source
JP2002190260A (ja) * 2000-10-13 2002-07-05 Toshiba Corp 陰極線管装置
US20040089535A1 (en) * 2002-08-16 2004-05-13 The Regents Of The University Of California. Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes
US6831284B2 (en) * 2002-11-21 2004-12-14 Applied Materials, Inc. Large area source for uniform electron beam generation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212059A (ja) * 1985-07-10 1987-01-21 Matsushita Electric Works Ltd 光放射電子管
US6429445B1 (en) * 1999-08-16 2002-08-06 Samsung Electronics Co., Ltd. Electron beam irradiating apparatus having cathode plate formed of non-metal conductive material
US20050003178A1 (en) * 2003-04-21 2005-01-06 Detert James W. Apparatus and methods for the attachment of materials to polyurethane foam, and articles made using them

Also Published As

Publication number Publication date
US20050092935A1 (en) 2005-05-05
JP2007510311A (ja) 2007-04-19
JP5242055B2 (ja) 2013-07-24
WO2005043599A2 (en) 2005-05-12
KR20060122875A (ko) 2006-11-30
TWI318416B (en) 2009-12-11
CN1875452A (zh) 2006-12-06
US7049606B2 (en) 2006-05-23
WO2005043599A3 (en) 2005-07-14
CN1875452B (zh) 2010-06-16
TW200515461A (en) 2005-05-01

Similar Documents

Publication Publication Date Title
US6831284B2 (en) Large area source for uniform electron beam generation
US6632482B1 (en) Plasma immersion ion implantation process
US6500496B1 (en) Hollow cathode for plasma doping system
KR100436950B1 (ko) 저압 스퍼터링 방법 및 장치
JP5745843B2 (ja) 強化された電荷中和及びプロセス制御を具えたプラズマ処理装置
TWI671778B (zh) 離子束裝置、離子植入裝置、離子束放出方法
US20080132046A1 (en) Plasma Doping With Electronically Controllable Implant Angle
JP2008539595A (ja) 傾斜プラズマドーピング
JP5652582B2 (ja) ハイブリッドイオン源
WO2001024217A1 (en) Means for achieving uniformity of emission of a large area electron source
TW201216320A (en) Control apparatus for plasma immersion ion implantation of a dielectric substrate
JP2000256845A (ja) 薄膜作成方法および薄膜作成装置
US7425716B2 (en) Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam
US20130287963A1 (en) Plasma Potential Modulated ION Implantation Apparatus
US7323399B2 (en) Clean process for an electron beam source
KR101068790B1 (ko) 전자 빔 처리 장치
US20140342102A1 (en) Small Feature Size Fabrication Using a Shadow Mask Deposition Process
JPS6136589B2 (enExample)
JP2000068227A (ja) 表面処理方法および装置
US7790583B2 (en) Clean process for an electron beam source
US7049612B2 (en) Electron beam treatment apparatus
JP2006114614A (ja) プラズマ処理装置および方法
US20040266123A1 (en) Electron beam treatment of SixNy films
JP2025507045A (ja) プラズマドーピングチャンバ内の炭素汚染を軽減するためのカバーリング
JP3140248B2 (ja) イオン・エネルギーの制御方法およびその装置

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A302 Request for accelerated examination
PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140828

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160629

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170924

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170924