KR101062029B1 - 반도체 디바이스에서 게이트 임계 치수를 개선시키기 위한 게이트 물질 평탄화 - Google Patents

반도체 디바이스에서 게이트 임계 치수를 개선시키기 위한 게이트 물질 평탄화 Download PDF

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KR101062029B1
KR101062029B1 KR1020057008203A KR20057008203A KR101062029B1 KR 101062029 B1 KR101062029 B1 KR 101062029B1 KR 1020057008203 A KR1020057008203 A KR 1020057008203A KR 20057008203 A KR20057008203 A KR 20057008203A KR 101062029 B1 KR101062029 B1 KR 101062029B1
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gate
gate material
gate structure
fin
layer
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KR20050062655A (ko
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시블리 에스. 아흐메드
싸이러스 이. 타베리
하이홍 왕
빈 유
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020057008203A 2002-11-08 2003-10-14 반도체 디바이스에서 게이트 임계 치수를 개선시키기 위한 게이트 물질 평탄화 Expired - Lifetime KR101062029B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/290,276 US6787439B2 (en) 2002-11-08 2002-11-08 Method using planarizing gate material to improve gate critical dimension in semiconductor devices
US10/290,276 2002-11-08
PCT/US2003/032655 WO2004044973A1 (en) 2002-11-08 2003-10-14 Planarizing gate material to improve gate critical dimension in semiconductor devices

Publications (2)

Publication Number Publication Date
KR20050062655A KR20050062655A (ko) 2005-06-23
KR101062029B1 true KR101062029B1 (ko) 2011-09-05

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KR1020057008203A Expired - Lifetime KR101062029B1 (ko) 2002-11-08 2003-10-14 반도체 디바이스에서 게이트 임계 치수를 개선시키기 위한 게이트 물질 평탄화

Country Status (8)

Country Link
US (1) US6787439B2 (https=)
EP (1) EP1559137A1 (https=)
JP (1) JP2006505949A (https=)
KR (1) KR101062029B1 (https=)
CN (1) CN100505182C (https=)
AU (1) AU2003282842A1 (https=)
TW (1) TWI315548B (https=)
WO (1) WO2004044973A1 (https=)

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Publication number Publication date
TW200414326A (en) 2004-08-01
WO2004044973A1 (en) 2004-05-27
US6787439B2 (en) 2004-09-07
KR20050062655A (ko) 2005-06-23
EP1559137A1 (en) 2005-08-03
US20040092062A1 (en) 2004-05-13
TWI315548B (en) 2009-10-01
AU2003282842A1 (en) 2004-06-03
CN1711630A (zh) 2005-12-21
JP2006505949A (ja) 2006-02-16
CN100505182C (zh) 2009-06-24

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