KR101030370B1 - 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체 - Google Patents

파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체 Download PDF

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KR101030370B1
KR101030370B1 KR1020090021308A KR20090021308A KR101030370B1 KR 101030370 B1 KR101030370 B1 KR 101030370B1 KR 1020090021308 A KR1020090021308 A KR 1020090021308A KR 20090021308 A KR20090021308 A KR 20090021308A KR 101030370 B1 KR101030370 B1 KR 101030370B1
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South Korea
Prior art keywords
resist
optical
parameter
simulator
image
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KR1020090021308A
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English (en)
Korean (ko)
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KR20090098720A (ko
Inventor
히로또 요시이
고우이찌로우 쯔지따
고지 미까미
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090021308A 2008-03-13 2009-03-12 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체 Expired - Fee Related KR101030370B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008064823A JP5178257B2 (ja) 2008-03-13 2008-03-13 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム
JPJP-P-2008-064823 2008-03-13

Publications (2)

Publication Number Publication Date
KR20090098720A KR20090098720A (ko) 2009-09-17
KR101030370B1 true KR101030370B1 (ko) 2011-04-20

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KR1020090021308A Expired - Fee Related KR101030370B1 (ko) 2008-03-13 2009-03-12 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US7642022B2 (https=)
JP (1) JP5178257B2 (https=)
KR (1) KR101030370B1 (https=)
TW (1) TWI421909B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5224687B2 (ja) * 2006-12-22 2013-07-03 キヤノン株式会社 露光条件算出プログラム及び露光条件算出方法
JP2010107737A (ja) * 2008-10-30 2010-05-13 Toshiba Corp マスク検証方法、半導体装置の製造方法及び露光条件の調整プログラム
JP5539148B2 (ja) * 2010-10-19 2014-07-02 キヤノン株式会社 レジストパターンの算出方法及び算出プログラム
US9064808B2 (en) 2011-07-25 2015-06-23 Synopsys, Inc. Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
US8609550B2 (en) * 2011-09-08 2013-12-17 Synopsys, Inc. Methods for manufacturing integrated circuit devices having features with reduced edge curvature
KR20190039579A (ko) * 2016-08-19 2019-04-12 에이에스엠엘 네델란즈 비.브이. 노광후 공정들의 모델링
US11139402B2 (en) 2018-05-14 2021-10-05 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
CN120178612A (zh) 2019-03-25 2025-06-20 Asml荷兰有限公司 用于确定图案化过程中的图案的方法
US11264458B2 (en) 2019-05-20 2022-03-01 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
TW202344928A (zh) * 2022-05-04 2023-11-16 聯華電子股份有限公司 光源參數的匹配方法
CN119165745B (zh) * 2024-11-07 2025-09-30 中国科学院微电子研究所 一种工艺窗口确定方法和相关装置
CN119882359B (zh) * 2025-01-20 2025-11-21 上海积塔半导体有限公司 一种接触孔光刻工艺条件设计方法及半导体结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050081180A1 (en) 2003-08-20 2005-04-14 Toshiya Kotani Pattern dimension correction method and verification method using OPC, mask and semiconductor device fabricated by using the correction method, and system and software product for executing the correction method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1385053A3 (en) * 2002-07-26 2004-05-06 ASML Masktools B.V. Automatical optical proximity correction (OPC) rule generation
JP2004228228A (ja) * 2003-01-21 2004-08-12 Toshiba Corp 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法
US7043712B2 (en) * 2003-09-09 2006-05-09 International Business Machines Corporation Method for adaptive segment refinement in optical proximity correction
JP2005352365A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 半導体デバイスの製造方法、露光用マスクの製造方法および露光用マスク

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050081180A1 (en) 2003-08-20 2005-04-14 Toshiya Kotani Pattern dimension correction method and verification method using OPC, mask and semiconductor device fabricated by using the correction method, and system and software product for executing the correction method

Also Published As

Publication number Publication date
US20090233194A1 (en) 2009-09-17
JP2009224409A (ja) 2009-10-01
TW200952040A (en) 2009-12-16
JP5178257B2 (ja) 2013-04-10
TWI421909B (zh) 2014-01-01
US7642022B2 (en) 2010-01-05
KR20090098720A (ko) 2009-09-17

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