KR101018724B1 - 반도체 디바이스의 제조 방법 - Google Patents

반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR101018724B1
KR101018724B1 KR1020087020589A KR20087020589A KR101018724B1 KR 101018724 B1 KR101018724 B1 KR 101018724B1 KR 1020087020589 A KR1020087020589 A KR 1020087020589A KR 20087020589 A KR20087020589 A KR 20087020589A KR 101018724 B1 KR101018724 B1 KR 101018724B1
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KR
South Korea
Prior art keywords
exposure
waveform
amount
photoresist
semiconductor substrate
Prior art date
Application number
KR1020087020589A
Other languages
English (en)
Korean (ko)
Other versions
KR20080097434A (ko
Inventor
게이조 야마다
Original Assignee
가부시키가이샤 토프콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 토프콘 filed Critical 가부시키가이샤 토프콘
Publication of KR20080097434A publication Critical patent/KR20080097434A/ko
Application granted granted Critical
Publication of KR101018724B1 publication Critical patent/KR101018724B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
KR1020087020589A 2006-03-06 2006-03-06 반도체 디바이스의 제조 방법 KR101018724B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/304286 WO2007102192A1 (ja) 2006-03-06 2006-03-06 半導体デバイス製造方法

Publications (2)

Publication Number Publication Date
KR20080097434A KR20080097434A (ko) 2008-11-05
KR101018724B1 true KR101018724B1 (ko) 2011-03-04

Family

ID=38474641

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087020589A KR101018724B1 (ko) 2006-03-06 2006-03-06 반도체 디바이스의 제조 방법

Country Status (4)

Country Link
JP (1) JP4754623B2 (zh)
KR (1) KR101018724B1 (zh)
CN (1) CN101405836B (zh)
WO (1) WO2007102192A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6362827B2 (ja) * 2013-01-26 2018-07-25 株式会社ホロン アライメント測定装置およびアライメント測定方法
KR101442401B1 (ko) * 2013-03-20 2014-09-23 (주) 아이씨티케이 Ｐｕｆ를 생성하는 장치 및 방법
JP7135637B2 (ja) * 2018-09-18 2022-09-13 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
CN114326313B (zh) * 2020-09-29 2024-01-23 长鑫存储技术有限公司 同时监测多种照明条件的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044096A (ja) * 1999-07-13 2001-02-16 Promos Technol Inc 臨界寸法を制御する方法と装置
KR20010051425A (ko) * 1999-11-05 2001-06-25 가네꼬 히사시 반도체장치 테스터

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11345754A (ja) * 1998-06-01 1999-12-14 Matsushita Electron Corp 半導体装置の検査方法及び製造方法
WO2002029870A1 (fr) * 2000-10-05 2002-04-11 Nikon Corporation Procede de determination des conditions d'exposition, procede d'exposition, dispositif de realisation dudit procede et support d'enregistrement
JP4060143B2 (ja) * 2002-07-31 2008-03-12 株式会社トプコン 非破壊測定装置および半導体装置製造方法
JP4255657B2 (ja) * 2002-08-01 2009-04-15 株式会社トプコン 半導体製造工程管理方法
JP4065817B2 (ja) * 2003-08-12 2008-03-26 株式会社日立ハイテクノロジーズ 露光プロセスモニタ方法
JP2005236060A (ja) * 2004-02-20 2005-09-02 Ebara Corp リソグラフィマージン評価方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044096A (ja) * 1999-07-13 2001-02-16 Promos Technol Inc 臨界寸法を制御する方法と装置
KR20010051425A (ko) * 1999-11-05 2001-06-25 가네꼬 히사시 반도체장치 테스터

Also Published As

Publication number Publication date
CN101405836A (zh) 2009-04-08
CN101405836B (zh) 2010-09-08
WO2007102192A1 (ja) 2007-09-13
KR20080097434A (ko) 2008-11-05
JP4754623B2 (ja) 2011-08-24
JPWO2007102192A1 (ja) 2009-07-23

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