KR100986928B1 - 파워 모듈을 테스트하기 위한 방법 및 장치 - Google Patents
파워 모듈을 테스트하기 위한 방법 및 장치 Download PDFInfo
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- KR100986928B1 KR100986928B1 KR1020020044745A KR20020044745A KR100986928B1 KR 100986928 B1 KR100986928 B1 KR 100986928B1 KR 1020020044745 A KR1020020044745 A KR 1020020044745A KR 20020044745 A KR20020044745 A KR 20020044745A KR 100986928 B1 KR100986928 B1 KR 100986928B1
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- South Korea
- Prior art keywords
- power module
- test
- power
- emitter
- voltage source
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- 238000012360 testing method Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 11
- 238000010998 test method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000499 gel Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/40—Testing power supplies
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Relating To Insulation (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Power Conversion In General (AREA)
Abstract
Description
Claims (7)
- 제어 게이트(12)와, 에미터(11)와, 컬렉터(10)와, 유전체 기판(5) 상의 적어도 하나의 파워 컴포넌트(3)와, 상기 파워 컴포넌트(3)와 역병렬(antiparallel)로 접속된 다이오드(4)를 포함하는 파워 모듈(1)을 테스트하는 방법으로서,직류 전압원에 중첩된 교류 전압원이 상기 파워 모듈의 컬렉터(10)와 에미터(11) 사이에 접속되고, 상기 다이오드(4)가 도통되지 않도록 상기 컬렉터(10)와 상기 에미터(11) 사이에서 상기 파워 모듈(1)에 의해 수신되는 전압(Vtest)이 항상 조건 Vtest > 0인지를 검증하고, 상기 제어 게이트(12)와 상기 에미터(11) 사이에 접속된 직류 전압원에 의해 상기 파워 컴포넌트(3)가 테스트 중에 턴오프 상태로 유지될 때, 상기 에미터(11)와 상기 컬렉터(10) 사이에 발생하는 부분 방전을 측정하는 파워 모듈 테스트 방법.
- 제1항에 있어서,상기 파워 모듈(1)은 복수의 에미터(11)와, 복수의 컬렉터(10)와, 공통 제어 게이트(12)와, 병렬 접속된 복수의 파워 컴포넌트(3)와, 각 파워 컴포넌트(3)와 역병렬로 접속된 다이오드(4)를 포함하며,직류 전압원에 중첩된 교류 전압원이 상기 파워 모듈의 컬렉터들(10)과 에미터들(11) 사이에 접속되고, 상기 다이오드들(4)이 도통되지 않도록 상기 컬렉터들(10)와 상기 에미터들(11) 사이에서 상기 파워 모듈(1)에 의해 수신되는 전압(Vtest)이 항상 조건 Vtest > 0인지를 검증하고, 상기 공통 제어 게이트(12)와 상기 에미터들(11) 사이에 접속된 직류 전압원에 의해 파워 컴포넌트들(3)이 테스트 중에 턴오프 상태로 유지될 때, 서로 전기적으로 접속된 에미터들(11)과 서로 전기적으로 접속된 컬렉터들(10) 사이에 발생하는 부분 방전을 측정하는 파워 모듈 테스트 방법.
- 제1항 또는 제2항에 있어서,상기 파워 컴포넌트(3)는 IGBT인 파워 모듈 테스트 방법.
- 제1항 또는 제2항에 따른 파워 모듈 테스트 방법을 구현하기 위한 파워 모듈(1) 테스트 장치로서,직류 전압원에 중첩된 교류 전압원에 접속되는 2개의 단자들(31, 32)과, 상기 2개의 단자들(31, 32) 사이의 부분 방전을 측정하기 위한 수단(21)을 포함하며, 상기 단자들(31 및 32) 간의 전압(Vtest)이 항상 조건 Vtest > 0인지를 검증하는 파워 모듈 테스트 장치.
- 제4항에 있어서,상기 2개의 단자들(31, 32)은 교류 전압 발생기(33)와 직렬로 연결된 직류 전압 발생기(34)에 접속되는 파워 모듈 테스트 장치.
- 제4항에 있어서,상기 2개의 단자들(31, 32)은 교류 전압 발생기(33)와 병렬로 연결된 직류 전압 발생기(34)에 접속되는 파워 모듈 테스트 장치.
- 제4항에 있어서,상기 전력 공급 단자들(31, 32)은 상기 파워 모듈(1)의 다양한 컬렉터들(10)을 함께 접속하기 위한 제1 회로(13)와, 상기 파워 모듈(1)의 다양한 에미터들(11)을 함께 접속하기 위한 제2 회로(14)에 제각기 접속되는 파워 모듈 테스트 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0110388 | 2001-08-02 | ||
FR0110388A FR2828288B1 (fr) | 2001-08-02 | 2001-08-02 | Procede et dispositif de test d'un module de puissance |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030011668A KR20030011668A (ko) | 2003-02-11 |
KR100986928B1 true KR100986928B1 (ko) | 2010-10-08 |
Family
ID=8866234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020044745A KR100986928B1 (ko) | 2001-08-02 | 2002-07-29 | 파워 모듈을 테스트하기 위한 방법 및 장치 |
Country Status (14)
Country | Link |
---|---|
US (1) | US6836125B2 (ko) |
EP (1) | EP1281978B1 (ko) |
JP (1) | JP4249956B2 (ko) |
KR (1) | KR100986928B1 (ko) |
CN (1) | CN1272636C (ko) |
AT (1) | ATE428935T1 (ko) |
AU (1) | AU2002300263B2 (ko) |
CA (1) | CA2396190C (ko) |
DE (1) | DE60231940D1 (ko) |
ES (1) | ES2329661T3 (ko) |
FR (1) | FR2828288B1 (ko) |
HK (1) | HK1052746B (ko) |
RU (1) | RU2298201C2 (ko) |
TW (1) | TWI221205B (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7486099B1 (en) | 2008-02-28 | 2009-02-03 | Caterpillar Inc. | System and method for testing power transistors |
US8427331B2 (en) * | 2008-12-31 | 2013-04-23 | Caterpillar Inc. | System and method for testing power transistors |
WO2010122889A1 (ja) * | 2009-04-22 | 2010-10-28 | 三菱電機株式会社 | パワーモジュールの絶縁劣化検知装置および方法、ならびにパワーモジュールシステム |
CN102540023B (zh) * | 2011-12-13 | 2017-04-05 | 上海电机系统节能工程技术研究中心有限公司 | 绝缘结构局部放电信号检测装置 |
JP7085906B2 (ja) | 2018-06-04 | 2022-06-17 | 三菱電機株式会社 | 情報管理システム、端末装置および情報管理方法 |
CN111273105B (zh) * | 2020-03-03 | 2021-12-14 | 海信集团有限公司 | 一种智能家电设备及其供电检测方法 |
FR3116347B1 (fr) | 2020-11-17 | 2022-12-09 | Safran Electrical & Power | Procédé et dispositif de test d’un module de puissance |
CN114325062B (zh) * | 2022-03-10 | 2022-06-10 | 杭州飞仕得科技有限公司 | 一种功率模组的电流测试方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05333089A (ja) * | 1992-06-02 | 1993-12-17 | Toshiba Corp | 大電力半導体素子の試験回路 |
JPH09162255A (ja) * | 1995-12-06 | 1997-06-20 | Fuji Electric Co Ltd | 半導体素子の試験装置 |
JPH1114694A (ja) * | 1997-06-20 | 1999-01-22 | Sanmei Denki Kk | パワーモジュールにおけるワイヤボンディング部の耐久性能試験方法 |
JP2001013204A (ja) * | 1999-06-29 | 2001-01-19 | Toshiba Corp | パワーデバイス試験装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5523620A (en) * | 1994-02-14 | 1996-06-04 | Delco Electronics Corporation | Coplanar linear dual switch module |
DE19725836C2 (de) * | 1997-06-18 | 2001-10-04 | Infineon Technologies Ag | Leistungshalbleiter-Anordnung auf DCB-Substrat |
US6054765A (en) * | 1998-04-27 | 2000-04-25 | Delco Electronics Corporation | Parallel dual switch module |
US6300878B1 (en) * | 2000-01-13 | 2001-10-09 | Cooper Industries, Inc. | Constant current regulator using IGBT control |
-
2001
- 2001-08-02 FR FR0110388A patent/FR2828288B1/fr not_active Expired - Fee Related
-
2002
- 2002-07-05 AT AT02291688T patent/ATE428935T1/de active
- 2002-07-05 EP EP02291688A patent/EP1281978B1/fr not_active Expired - Lifetime
- 2002-07-05 ES ES02291688T patent/ES2329661T3/es not_active Expired - Lifetime
- 2002-07-05 DE DE60231940T patent/DE60231940D1/de not_active Expired - Lifetime
- 2002-07-23 US US10/200,191 patent/US6836125B2/en not_active Expired - Lifetime
- 2002-07-25 AU AU2002300263A patent/AU2002300263B2/en not_active Ceased
- 2002-07-29 TW TW091116907A patent/TWI221205B/zh not_active IP Right Cessation
- 2002-07-29 KR KR1020020044745A patent/KR100986928B1/ko active IP Right Grant
- 2002-07-30 CA CA2396190A patent/CA2396190C/fr not_active Expired - Fee Related
- 2002-07-30 JP JP2002221359A patent/JP4249956B2/ja not_active Expired - Fee Related
- 2002-08-01 RU RU2002121000/28A patent/RU2298201C2/ru not_active IP Right Cessation
- 2002-08-02 CN CNB021274827A patent/CN1272636C/zh not_active Expired - Fee Related
-
2003
- 2003-07-09 HK HK03104946.4A patent/HK1052746B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05333089A (ja) * | 1992-06-02 | 1993-12-17 | Toshiba Corp | 大電力半導体素子の試験回路 |
JPH09162255A (ja) * | 1995-12-06 | 1997-06-20 | Fuji Electric Co Ltd | 半導体素子の試験装置 |
JPH1114694A (ja) * | 1997-06-20 | 1999-01-22 | Sanmei Denki Kk | パワーモジュールにおけるワイヤボンディング部の耐久性能試験方法 |
JP2001013204A (ja) * | 1999-06-29 | 2001-01-19 | Toshiba Corp | パワーデバイス試験装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2003130909A (ja) | 2003-05-08 |
AU2002300263B2 (en) | 2006-12-07 |
HK1052746A1 (en) | 2003-09-26 |
CN1405571A (zh) | 2003-03-26 |
US20030025522A1 (en) | 2003-02-06 |
DE60231940D1 (de) | 2009-05-28 |
EP1281978B1 (fr) | 2009-04-15 |
EP1281978A1 (fr) | 2003-02-05 |
CA2396190C (fr) | 2010-05-04 |
FR2828288A1 (fr) | 2003-02-07 |
HK1052746B (zh) | 2007-04-20 |
FR2828288B1 (fr) | 2003-10-24 |
ATE428935T1 (de) | 2009-05-15 |
KR20030011668A (ko) | 2003-02-11 |
ES2329661T3 (es) | 2009-11-30 |
CN1272636C (zh) | 2006-08-30 |
RU2298201C2 (ru) | 2007-04-27 |
TWI221205B (en) | 2004-09-21 |
CA2396190A1 (fr) | 2003-02-02 |
JP4249956B2 (ja) | 2009-04-08 |
US6836125B2 (en) | 2004-12-28 |
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