KR100967923B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR100967923B1
KR100967923B1 KR1020080003358A KR20080003358A KR100967923B1 KR 100967923 B1 KR100967923 B1 KR 100967923B1 KR 1020080003358 A KR1020080003358 A KR 1020080003358A KR 20080003358 A KR20080003358 A KR 20080003358A KR 100967923 B1 KR100967923 B1 KR 100967923B1
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KR
South Korea
Prior art keywords
conductive layer
substrate
film
insulating substrate
thin film
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KR1020080003358A
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English (en)
Korean (ko)
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KR20080067965A (ko
Inventor
타쿠야 스가와라
Original Assignee
도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20080067965A publication Critical patent/KR20080067965A/ko
Application granted granted Critical
Publication of KR100967923B1 publication Critical patent/KR100967923B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020080003358A 2007-01-17 2008-01-11 기판 처리 장치 및 기판 처리 방법 KR100967923B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00008306 2007-01-17
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
KR20080067965A KR20080067965A (ko) 2008-07-22
KR100967923B1 true KR100967923B1 (ko) 2010-07-06

Family

ID=39704110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080003358A KR100967923B1 (ko) 2007-01-17 2008-01-11 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
JP (1) JP4361568B2 (zh)
KR (1) KR100967923B1 (zh)
CN (1) CN101226877B (zh)
TW (1) TW200849455A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988667B1 (ko) 2009-01-23 2010-10-18 장석호 발전 효율과 회전력 향상이 이루어진 발전장치
JP4681084B1 (ja) * 2010-02-23 2011-05-11 株式会社テオス Ｃｖｄ処理方法およびその方法を使用するｃｖｄ装置
JP5902073B2 (ja) * 2012-09-25 2016-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
CN107217240A (zh) * 2017-07-11 2017-09-29 江苏星特亮科技有限公司 一种石墨烯薄膜的制备方法
CN109402575A (zh) * 2018-12-27 2019-03-01 北京铂阳顶荣光伏科技有限公司 基座以及蒸镀设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP2005294033A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Works Ltd 電子源装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP2005294033A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Works Ltd 電子源装置

Also Published As

Publication number Publication date
JP2008177289A (ja) 2008-07-31
CN101226877A (zh) 2008-07-23
TWI353649B (zh) 2011-12-01
JP4361568B2 (ja) 2009-11-11
TW200849455A (en) 2008-12-16
KR20080067965A (ko) 2008-07-22
CN101226877B (zh) 2010-12-01

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