KR100960978B1 - 플라즈마 제조 방법 및 장치 - Google Patents
플라즈마 제조 방법 및 장치 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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Abstract
Description
Claims (29)
- 플라즈마가 교류를 수반하는 적어도 하나의 유도 코일(2)을 구비한 플라즈마 처리 장치의 진공 용기(1)의 진공 챔버(1a)에서 적어도 공동 생산되고, 상기 플라즈마를 생산하는데 사용되는 가스가 적어도 하나의 주입구(3)를 통해 진공 챔버(1a)로 공급되고 진공 챔버(1a)는 적어도 하나의 펌프 장치(4)의 펌핑 작용으로 처리되며, 플라즈마 밀도에 영향을 주기 위해서 직류가 유도 코일(2)에 인가되고,상기 플라즈마가 일정한 거리로 분리된 적어도 한 쌍의 전극(5a, 5b)으로 인가되는 전압에 의해 공동 생산되거나 공동 여기되고, 상기 진공 챔버(1a)가 기판(9)용의 기판 테이블(8)을 포함하며, 상기 기판 테이블(8)이 전극(5a)에 의해 형성되고, 암흑부 스크리닝이 상대 전극(5b)으로 사용되고,상기 유도 코일(2)이 유전체 내부 케이싱(7) 또는 유전체 윈도우에 의해 플라즈마가 생산되는 진공 용기(1a)의 적어도 일부로부터 분리되는 것을 특징으로 하는 플라즈마 제조 방법.
- 제 1항에 있어서, 상기 직류가 변조되는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 교류가 고주파수 생성기(6)에 의해 생산되는 것을 특징으로 하는 방법.
- 제 3항에 있어서, 상기 고주파수 생성기(6)가 100 내지 14,000 kHz의 주파수에서 작동하는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 직류 및 유도 코일(2)의 와인딩수가 와인딩수와 직류의 곱이 평균치 및 절대치로 10 내지 1,000 암페어 와인딩이 되는 방식으로 선택되는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 직류가 저역 통과 필터(12)를 통해 유도 코일(2)로 인가되는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 진공 챔버(1a) 내의 압력이 0.01 내지 10 Pa인 것을 특징으로 하는 방법.
- 삭제
- 제 1항에 있어서, 상기 전압이 교류 전압 또는 가능한 단극 또는 양극 방식으로 펄스되는 직류 전압인 것을 특징으로 하는 방법.
- 제 9항에 있어서, 상기 교류 전압이 적어도 1 MHz의 주파수를 갖는 고주파수 교류 전압인 것을 특징으로 하는 방법.
- 삭제
- 삭제
- 삭제
- 제 1항에 있어서, 교류 및 직류가 기판 평면 또는 그에 평행한 평면에서의 플라즈마 밀도의 균일성 지수가 10% 이하가 되는 방식으로 선택되는 것을 특징으로 하는 방법.
- 삭제
- 삭제
- 삭제
- 진공 용기(1)의 진공 챔버(1a)에서 플라즈마를 적어도 공동 생산하기 위한 적어도 하나의 유도 코일(2)을 포함하고, 상기 진공 챔버(1a)가 플라즈마 생산을 위한 가스가 주입되는 적어도 하나의 주입구(3)를 구비하고 적어도 하나의 펌프 장치(4)를 구비하고, 유도 코일(2)이 상기 유도 코일로 교류 또는 가능한 변조된 직류를 인가하는 하나 이상의 전압 생성기에 연결되고, 상기 변조된 직류가 단극 또는 양극 방식으로 펄스되며,특정 거리로 분리된 적어도 한 쌍의 전극(5a, 5b)을 구비하고, 진공 챔버(1a)가 기판(9)용 기판 테이블(8)을 포함하며, 상기 기판 테이블(8)이 전극(5a)에 의해 형성되고, 암흑부 스크리닝이 상대 전극(5b)으로 사용되며, 유도 코일(2)이 유전체 내부 케이싱(7) 또는 유전체 윈도우에 의해 플라즈마가 생산되는 진공 용기(1a)의 적어도 일부로부터 분리되는 것을 특징으로 하는 플라즈마 처리 장치.
- 제 18항에 있어서, 상기 유도 코일(2)이 어댑터 필터(12)를 통해 교류 전압 생성기(6)에 연결되고 저역 통과 필터(13)를 통해 직류 전압 생성기(6')에 연결되는 것을 특징으로 하는 장치.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 운반 슬루스게이트에 의해 운반 장치에 연결된 다수의 처리 스테이션을 포함하는 클러스터 장치에 있어서, 적어도 하나의 상기 처리 스테이션이 제 18항 또는 제 19항에 따른 장치인 것을 특징으로 하는 클러스터 장치.
- 제 3항에 있어서, 상기 고주파수 생성기(6)가 400 내지 2,000 kHz의 주파수에서 작동하는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 직류 및 유도 코일(2)의 와인딩수가 와인딩수와 직류의 곱이 평균치 및 절대치로 100 내지 400 암페어 와인딩이 되는 방식으로 선택되는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 진공 챔버(1a) 내의 압력이 0.05 내지 0.2 Pa인 것을 특징으로 하는 방법.
- 제 1항에 있어서, 교류 및 직류가 기판 평면 또는 그에 평행한 평면에서의 플라즈마 밀도의 균일성 지수가 5% 이하가 되는 방식으로 선택되는 것을 특징으로 하는 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10147998A DE10147998A1 (de) | 2001-09-28 | 2001-09-28 | Verfahren und Vorrichtung zur Erzeugung eines Plasmas |
DE10147998.0 | 2001-09-28 | ||
PCT/EP2002/010811 WO2003030207A1 (de) | 2001-09-28 | 2002-09-26 | Verfahren und vorrichtung zur erzeugung eines plasmas |
Publications (2)
Publication Number | Publication Date |
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KR20040050898A KR20040050898A (ko) | 2004-06-17 |
KR100960978B1 true KR100960978B1 (ko) | 2010-06-03 |
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KR1020047004415A KR100960978B1 (ko) | 2001-09-28 | 2002-09-26 | 플라즈마 제조 방법 및 장치 |
Country Status (9)
Country | Link |
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US (2) | US7476301B2 (ko) |
EP (1) | EP1433192A1 (ko) |
JP (1) | JP4610191B2 (ko) |
KR (1) | KR100960978B1 (ko) |
CN (1) | CN100364035C (ko) |
DE (1) | DE10147998A1 (ko) |
HK (1) | HK1069674A1 (ko) |
TW (1) | TWI290809B (ko) |
WO (1) | WO2003030207A1 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US6831021B2 (en) * | 2002-06-12 | 2004-12-14 | Applied Materials, Inc. | Plasma method and apparatus for processing a substrate |
DE102004002243A1 (de) * | 2003-02-07 | 2004-09-16 | Trikon Technologies Limited, Newport | Elektrostatische Klemmhalterung für dünne Wafer in einer Vakuumkammer zur Plasmabearbeitung |
KR20050004995A (ko) * | 2003-07-01 | 2005-01-13 | 삼성전자주식회사 | 플라즈마를 이용하는 기판 가공 장치 |
KR100741916B1 (ko) | 2004-12-29 | 2007-07-24 | 동부일렉트로닉스 주식회사 | 플라즈마 처리장치 및 그 세정방법 |
JP4982893B2 (ja) * | 2007-06-28 | 2012-07-25 | 独立行政法人産業技術総合研究所 | 高周波加熱式吸着塔 |
DE102007039758B4 (de) * | 2007-08-22 | 2012-10-31 | Johann Wolfgang Goethe-Universität Frankfurt am Main | Einrichtung und Verfahren zur Erzeugung eines Plasmas durch niederfrequente induktive Anregung |
DE102008022181B4 (de) | 2008-05-05 | 2019-05-02 | Arianegroup Gmbh | Ionentriebwerk |
US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
WO2009146439A1 (en) | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
WO2011123125A1 (en) | 2010-03-31 | 2011-10-06 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
JP2011522381A (ja) | 2008-05-30 | 2011-07-28 | コロラド ステート ユニバーシティ リサーチ ファンデーション | プラズマに基づく化学源装置およびその使用方法 |
JP5347345B2 (ja) * | 2008-06-16 | 2013-11-20 | 旭硝子株式会社 | 導電性マイエナイト型化合物の製造方法 |
US8222822B2 (en) | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
AU2010349784B2 (en) | 2010-03-31 | 2015-01-15 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
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DE10147998A1 (de) | 2003-04-10 |
CN1559077A (zh) | 2004-12-29 |
TWI290809B (en) | 2007-12-01 |
HK1069674A1 (en) | 2005-05-27 |
CN100364035C (zh) | 2008-01-23 |
JP2005505130A (ja) | 2005-02-17 |
EP1433192A1 (de) | 2004-06-30 |
JP4610191B2 (ja) | 2011-01-12 |
US7476301B2 (en) | 2009-01-13 |
WO2003030207A1 (de) | 2003-04-10 |
US8613828B2 (en) | 2013-12-24 |
KR20040050898A (ko) | 2004-06-17 |
US20090145554A1 (en) | 2009-06-11 |
US20030075522A1 (en) | 2003-04-24 |
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