KR100952026B1 - 전자 빔 묘화 장치 및 전자 빔 묘화 방법 - Google Patents

전자 빔 묘화 장치 및 전자 빔 묘화 방법 Download PDF

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Publication number
KR100952026B1
KR100952026B1 KR1020080028115A KR20080028115A KR100952026B1 KR 100952026 B1 KR100952026 B1 KR 100952026B1 KR 1020080028115 A KR1020080028115 A KR 1020080028115A KR 20080028115 A KR20080028115 A KR 20080028115A KR 100952026 B1 KR100952026 B1 KR 100952026B1
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KR
South Korea
Prior art keywords
electron beam
pattern
deflector
shape
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080028115A
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English (en)
Korean (ko)
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KR20080088435A (ko
Inventor
리에꼬 니시무라
Original Assignee
가부시키가이샤 뉴플레어 테크놀로지
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Publication date
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Publication of KR20080088435A publication Critical patent/KR20080088435A/ko
Application granted granted Critical
Publication of KR100952026B1 publication Critical patent/KR100952026B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
KR1020080028115A 2007-03-28 2008-03-27 전자 빔 묘화 장치 및 전자 빔 묘화 방법 Expired - Fee Related KR100952026B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00083464 2007-03-28
JP2007083464A JP2008244194A (ja) 2007-03-28 2007-03-28 電子ビーム描画装置及び電子ビーム描画方法

Publications (2)

Publication Number Publication Date
KR20080088435A KR20080088435A (ko) 2008-10-02
KR100952026B1 true KR100952026B1 (ko) 2010-04-08

Family

ID=39792610

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080028115A Expired - Fee Related KR100952026B1 (ko) 2007-03-28 2008-03-27 전자 빔 묘화 장치 및 전자 빔 묘화 방법

Country Status (3)

Country Link
US (1) US7777205B2 (https=)
JP (1) JP2008244194A (https=)
KR (1) KR100952026B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101310462B1 (ko) 2012-02-10 2013-09-25 이병화 음식물쓰레기 종량제 수거장치의 투입량 감지장치

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5896775B2 (ja) * 2012-02-16 2016-03-30 株式会社ニューフレアテクノロジー 電子ビーム描画装置および電子ビーム描画方法
JP2013201239A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 描画パターン形成方法、描画データ生成方法および描画データ生成装置
US11199774B2 (en) * 2020-03-30 2021-12-14 Canon Kabushiki Kaisha Method and apparatus to improve frame cure imaging resolution for extrusion control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079392A (ja) 2003-09-01 2005-03-24 Toshiba Mach Co Ltd 描画データ作成方法
JP2005129850A (ja) * 2003-10-27 2005-05-19 Toshiba Corp 荷電ビーム描画装置及び描画方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703005B2 (ja) * 1987-12-18 1998-01-26 株式会社日立製作所 電子線描画装置及び描画方法
JP3085918B2 (ja) * 1997-03-31 2000-09-11 株式会社東芝 荷電ビーム描画方法
JPH11224840A (ja) * 1998-02-04 1999-08-17 Nikon Corp 荷電粒子線露光装置および露光方法
US6262429B1 (en) * 1999-01-06 2001-07-17 Etec Systems, Inc. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079392A (ja) 2003-09-01 2005-03-24 Toshiba Mach Co Ltd 描画データ作成方法
JP2005129850A (ja) * 2003-10-27 2005-05-19 Toshiba Corp 荷電ビーム描画装置及び描画方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101310462B1 (ko) 2012-02-10 2013-09-25 이병화 음식물쓰레기 종량제 수거장치의 투입량 감지장치

Also Published As

Publication number Publication date
US20080237493A1 (en) 2008-10-02
JP2008244194A (ja) 2008-10-09
US7777205B2 (en) 2010-08-17
KR20080088435A (ko) 2008-10-02

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