KR100931712B1 - 레이저 빔 노광장치 및 그 방법 - Google Patents

레이저 빔 노광장치 및 그 방법 Download PDF

Info

Publication number
KR100931712B1
KR100931712B1 KR1020060108024A KR20060108024A KR100931712B1 KR 100931712 B1 KR100931712 B1 KR 100931712B1 KR 1020060108024 A KR1020060108024 A KR 1020060108024A KR 20060108024 A KR20060108024 A KR 20060108024A KR 100931712 B1 KR100931712 B1 KR 100931712B1
Authority
KR
South Korea
Prior art keywords
laser beam
substrate
irradiation
optical path
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060108024A
Other languages
English (en)
Korean (ko)
Other versions
KR20070048613A (ko
Inventor
하루야스 켄모츠
히로아키 사토
야스히토 이케다
마사토 모리
Original Assignee
가부시키가이샤 오크세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 오크세이사쿠쇼 filed Critical 가부시키가이샤 오크세이사쿠쇼
Publication of KR20070048613A publication Critical patent/KR20070048613A/ko
Application granted granted Critical
Publication of KR100931712B1 publication Critical patent/KR100931712B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70025Production of exposure light, i.e. light sources by lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020060108024A 2005-11-04 2006-11-02 레이저 빔 노광장치 및 그 방법 Expired - Fee Related KR100931712B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00321256 2005-11-04
JP2005321256 2005-11-04
JPJP-P-2006-00246266 2006-09-12
JP2006246266A JP4533874B2 (ja) 2005-11-04 2006-09-12 レーザビーム露光装置

Publications (2)

Publication Number Publication Date
KR20070048613A KR20070048613A (ko) 2007-05-09
KR100931712B1 true KR100931712B1 (ko) 2009-12-14

Family

ID=38209773

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060108024A Expired - Fee Related KR100931712B1 (ko) 2005-11-04 2006-11-02 레이저 빔 노광장치 및 그 방법

Country Status (3)

Country Link
JP (1) JP4533874B2 (https=)
KR (1) KR100931712B1 (https=)
TW (1) TW200719101A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101048785B1 (ko) * 2008-09-25 2011-07-15 에이티엘(주) 디지털 노광 장치
KR102225208B1 (ko) * 2019-05-13 2021-03-09 디아이티 주식회사 반도체 표면처리 시스템 및 방법
JP2024042874A (ja) * 2022-09-16 2024-03-29 株式会社Screenホールディングス 露光方法および露光装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10235480A (ja) 1996-12-27 1998-09-08 Omron Corp レーザビームを用いてマーキングするための方法、並びに、表示パネルの製造工程においてガラス基板に識別情報をマーキングするための方法
JP2002365811A (ja) * 2001-06-08 2002-12-18 Mitsubishi Corp フォトレジスト塗布基板の露光方法及び装置
US20040241340A1 (en) * 2001-10-25 2004-12-02 Kenji Sato Method and device for marking identification code by laser beam
KR20060053045A (ko) * 2004-11-13 2006-05-19 삼성전자주식회사 갈바노미터 스캐너를 이용한 레이저 마킹 장치 및 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294501A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP2000294500A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP3091460B1 (ja) * 1999-12-10 2000-09-25 東レエンジニアリング株式会社 露光装置
JP4342663B2 (ja) * 1999-12-20 2009-10-14 株式会社オーク製作所 周辺露光装置
JP2001201862A (ja) * 2000-01-19 2001-07-27 Nikon Corp 周辺露光装置
JP3321733B2 (ja) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 露光装置
JP3547418B2 (ja) * 2001-10-25 2004-07-28 三菱商事株式会社 レーザビームによる液晶パネルのマーキング方法及び装置
JP4664102B2 (ja) * 2005-03-18 2011-04-06 東レエンジニアリング株式会社 露光装置及び露光方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10235480A (ja) 1996-12-27 1998-09-08 Omron Corp レーザビームを用いてマーキングするための方法、並びに、表示パネルの製造工程においてガラス基板に識別情報をマーキングするための方法
JP2002365811A (ja) * 2001-06-08 2002-12-18 Mitsubishi Corp フォトレジスト塗布基板の露光方法及び装置
US20040241340A1 (en) * 2001-10-25 2004-12-02 Kenji Sato Method and device for marking identification code by laser beam
KR20060053045A (ko) * 2004-11-13 2006-05-19 삼성전자주식회사 갈바노미터 스캐너를 이용한 레이저 마킹 장치 및 방법

Also Published As

Publication number Publication date
TW200719101A (en) 2007-05-16
TWI324283B (https=) 2010-05-01
JP2007148359A (ja) 2007-06-14
KR20070048613A (ko) 2007-05-09
JP4533874B2 (ja) 2010-09-01

Similar Documents

Publication Publication Date Title
JP2010224544A (ja) レーザビーム露光装置およびその方法
TWI271602B (en) A correcting method and an exposure method of exposure device, and an exposure device
JP3453818B2 (ja) 基板の高さ位置検出装置及び方法
US20030117602A1 (en) Projection aligner
KR20040042852A (ko) 노광장치
JP4450739B2 (ja) 露光装置
CN102472987A (zh) 曝光装置、曝光方法以及元件制造方法
KR100824022B1 (ko) 투영 노광장치 및 투영 노광방법
KR20080016494A (ko) 묘화 위치 측정 방법 및 장치, 그리고 묘화 방법 및 장치
KR100931714B1 (ko) 레이저 빔·자외선조사 주변노광장치 및 그 방법
JP4533785B2 (ja) アライメントセンサの位置校正方法、基準パターン校正方法、露光位置補正方法、校正用パターン及びアライメント装置
KR100931712B1 (ko) 레이저 빔 노광장치 및 그 방법
KR100935241B1 (ko) 주변노광장치 및 그 방법
KR100947079B1 (ko) 레이저 빔·자외선조사 주변노광장치 및 그 방법
KR100931713B1 (ko) 주변노광장치 및 그 방법
JP2006337878A (ja) 露光装置及び露光方法
JP2006337873A (ja) 露光装置及び露光方法
US20090251676A1 (en) Exposure apparatus and exposure method
KR100718194B1 (ko) 투영광학계 및 패턴묘화장치
JP5209946B2 (ja) 焦点位置検出方法および描画装置
JP2006301301A (ja) 搬送誤差計測方法、校正方法、描画方法、露光描画方法、描画装置及び露光描画装置
JP2006030791A (ja) 光学装置
JP2006337874A (ja) 露光装置及び露光方法
JP2007005517A (ja) 光源ユニット、露光装置及び露光方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20121121

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20131118

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20141120

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20151118

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20161205

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20161205

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000