JP4533874B2 - レーザビーム露光装置 - Google Patents

レーザビーム露光装置 Download PDF

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Publication number
JP4533874B2
JP4533874B2 JP2006246266A JP2006246266A JP4533874B2 JP 4533874 B2 JP4533874 B2 JP 4533874B2 JP 2006246266 A JP2006246266 A JP 2006246266A JP 2006246266 A JP2006246266 A JP 2006246266A JP 4533874 B2 JP4533874 B2 JP 4533874B2
Authority
JP
Japan
Prior art keywords
laser beam
substrate
irradiation
optical path
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006246266A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007148359A (ja
Inventor
晴康 劔持
博明 佐藤
泰人 池田
昌人 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orc Manufacturing Co Ltd
Original Assignee
Orc Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orc Manufacturing Co Ltd filed Critical Orc Manufacturing Co Ltd
Priority to JP2006246266A priority Critical patent/JP4533874B2/ja
Priority to TW095137692A priority patent/TW200719101A/zh
Priority to KR1020060108024A priority patent/KR100931712B1/ko
Publication of JP2007148359A publication Critical patent/JP2007148359A/ja
Application granted granted Critical
Publication of JP4533874B2 publication Critical patent/JP4533874B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006246266A 2005-11-04 2006-09-12 レーザビーム露光装置 Expired - Fee Related JP4533874B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006246266A JP4533874B2 (ja) 2005-11-04 2006-09-12 レーザビーム露光装置
TW095137692A TW200719101A (en) 2005-11-04 2006-10-13 Laser beam exposure apparatus and method therefor
KR1020060108024A KR100931712B1 (ko) 2005-11-04 2006-11-02 레이저 빔 노광장치 및 그 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005321256 2005-11-04
JP2006246266A JP4533874B2 (ja) 2005-11-04 2006-09-12 レーザビーム露光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010090141A Division JP2010224544A (ja) 2005-11-04 2010-04-09 レーザビーム露光装置およびその方法

Publications (2)

Publication Number Publication Date
JP2007148359A JP2007148359A (ja) 2007-06-14
JP4533874B2 true JP4533874B2 (ja) 2010-09-01

Family

ID=38209773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006246266A Expired - Fee Related JP4533874B2 (ja) 2005-11-04 2006-09-12 レーザビーム露光装置

Country Status (3)

Country Link
JP (1) JP4533874B2 (https=)
KR (1) KR100931712B1 (https=)
TW (1) TW200719101A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101048785B1 (ko) * 2008-09-25 2011-07-15 에이티엘(주) 디지털 노광 장치
KR102225208B1 (ko) * 2019-05-13 2021-03-09 디아이티 주식회사 반도체 표면처리 시스템 및 방법
JP2024042874A (ja) * 2022-09-16 2024-03-29 株式会社Ｓｃｒｅｅｎホールディングス 露光方法および露光装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3915851B2 (ja) 1996-12-27 2007-05-16 オムロン株式会社 レーザビームを用いてマーキングするための方法、並びに、表示パネルの製造工程においてガラス基板に識別情報をマーキングするための方法
JP2000294501A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP2000294500A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP3091460B1 (ja) * 1999-12-10 2000-09-25 東レエンジニアリング株式会社 露光装置
JP4342663B2 (ja) * 1999-12-20 2009-10-14 株式会社オーク製作所 周辺露光装置
JP2001201862A (ja) * 2000-01-19 2001-07-27 Nikon Corp 周辺露光装置
JP3321733B2 (ja) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 露光装置
JP2002365811A (ja) * 2001-06-08 2002-12-18 Mitsubishi Corp フォトレジスト塗布基板の露光方法及び装置
JP3547418B2 (ja) * 2001-10-25 2004-07-28 三菱商事株式会社 レーザビームによる液晶パネルのマーキング方法及び装置
CN1288502C (zh) * 2001-10-25 2006-12-06 东丽工程株式会社 利用激光束的识别码的打印装置
KR20060053045A (ko) * 2004-11-13 2006-05-19 삼성전자주식회사 갈바노미터 스캐너를 이용한 레이저 마킹 장치 및 방법
JP4664102B2 (ja) * 2005-03-18 2011-04-06 東レエンジニアリング株式会社 露光装置及び露光方法

Also Published As

Publication number Publication date
TW200719101A (en) 2007-05-16
KR100931712B1 (ko) 2009-12-14
TWI324283B (https=) 2010-05-01
JP2007148359A (ja) 2007-06-14
KR20070048613A (ko) 2007-05-09

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