KR100926380B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR100926380B1
KR100926380B1 KR1020070030756A KR20070030756A KR100926380B1 KR 100926380 B1 KR100926380 B1 KR 100926380B1 KR 1020070030756 A KR1020070030756 A KR 1020070030756A KR 20070030756 A KR20070030756 A KR 20070030756A KR 100926380 B1 KR100926380 B1 KR 100926380B1
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electrode
frequency
processing
high frequency
impedance
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KR20070098643A (ko
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나오키 마츠모토
치시오 고시미즈
요시노부 하야카와
히데토시 하나오카
마나부 이와타
사토시 다나카
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020070030756A 2006-03-30 2007-03-29 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR100926380B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006092908A JP5031252B2 (ja) 2006-03-30 2006-03-30 プラズマ処理装置
JPJP-P-2006-00092908 2006-03-30

Publications (2)

Publication Number Publication Date
KR20070098643A KR20070098643A (ko) 2007-10-05
KR100926380B1 true KR100926380B1 (ko) 2009-11-11

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ID=38121789

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KR1020070030756A Active KR100926380B1 (ko) 2006-03-30 2007-03-29 플라즈마 처리 장치 및 플라즈마 처리 방법

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Country Link
EP (1) EP1840937B1 (https=)
JP (1) JP5031252B2 (https=)
KR (1) KR100926380B1 (https=)
CN (2) CN101047114A (https=)
TW (1) TWI431683B (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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JP5371238B2 (ja) * 2007-12-20 2013-12-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP4898718B2 (ja) * 2008-02-08 2012-03-21 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
KR101698615B1 (ko) * 2008-12-10 2017-01-20 램 리써치 코포레이션 실리콘 전극 연마를 용이하게 하는 플래튼 및 어댑터 어셈블리
US9887069B2 (en) 2008-12-19 2018-02-06 Lam Research Corporation Controlling ion energy distribution in plasma processing systems
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
TWI522013B (zh) * 2009-03-30 2016-02-11 東京威力科創股份有限公司 Plasma processing device and plasma processing method
KR101173293B1 (ko) * 2009-12-31 2012-08-13 엘아이지에이디피 주식회사 기판 처리 장치의 벽면 에너지 손실 저감 장치
US9174296B2 (en) * 2010-10-20 2015-11-03 Lam Research Corporation Plasma ignition and sustaining methods and apparatuses
TWI638587B (zh) * 2011-10-05 2018-10-11 美商應用材料股份有限公司 對稱電漿處理腔室
US8872525B2 (en) * 2011-11-21 2014-10-28 Lam Research Corporation System, method and apparatus for detecting DC bias in a plasma processing chamber
JP6018757B2 (ja) 2012-01-18 2016-11-02 東京エレクトロン株式会社 基板処理装置
JP6009171B2 (ja) 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
WO2014064779A1 (ja) * 2012-10-24 2014-05-01 株式会社Ｊｃｕ プラズマ処理装置及び方法
JP5906444B2 (ja) 2013-05-14 2016-04-20 パナソニックＩｐマネジメント株式会社 液体処理装置、液体処理方法及びプラズマ処理液
JP6584329B2 (ja) * 2016-01-19 2019-10-02 東京エレクトロン株式会社 プラズマ処理装置
CN107305830B (zh) * 2016-04-20 2020-02-11 中微半导体设备(上海)股份有限公司 电容耦合等离子体处理装置与等离子体处理方法
JP6902450B2 (ja) * 2017-10-10 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法
KR101979223B1 (ko) * 2017-12-22 2019-05-17 인베니아 주식회사 플라즈마 처리장치
KR101990577B1 (ko) * 2017-12-22 2019-06-18 인베니아 주식회사 필드 조절 유닛 및 이를 포함하는 플라즈마 처리장치
TW202013581A (zh) * 2018-05-23 2020-04-01 日商東京威力科創股份有限公司 電漿處理裝置
JP7306886B2 (ja) * 2018-07-30 2023-07-11 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
CN111199860A (zh) * 2018-11-20 2020-05-26 江苏鲁汶仪器有限公司 一种刻蚀均匀性调节装置及方法
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
US11189517B2 (en) * 2019-04-26 2021-11-30 Applied Materials, Inc. RF electrostatic chuck filter circuit
CN110379701A (zh) * 2019-07-24 2019-10-25 沈阳拓荆科技有限公司 具有可调射频组件的晶圆支撑座
KR20250161032A (ko) * 2020-02-04 2025-11-14 램 리써치 코포레이션 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열
CN113936985B (zh) * 2020-07-14 2025-03-11 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
WO2022202702A1 (ja) * 2021-03-24 2022-09-29 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
CN117448756B (zh) * 2022-07-19 2026-02-24 友威科技股份有限公司 具升降式电极的连续电浆制程系统
CN115607263B (zh) * 2022-09-30 2023-07-11 邦士医疗科技股份有限公司 一种等离子射频手术系统
CN120261246A (zh) * 2024-01-02 2025-07-04 北京北方华创微电子装备有限公司 射频功率输出电路和半导体工艺设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003405A1 (en) 2001-06-29 2003-01-09 Lam Research Corporation Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
KR20040094690A (ko) * 2002-02-14 2004-11-10 램 리서치 코퍼레이션 플라즈마 처리 장치 및 방법
KR20050016012A (ko) * 2003-08-01 2005-02-21 동경 엘렉트론 주식회사 플라즈마 에칭방법 및 플라즈마 처리장치
US20060037703A1 (en) 2004-06-21 2006-02-23 Tokyo Electron Limited Plasma processing apparatus and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060037704A1 (en) 2004-07-30 2006-02-23 Tokyo Electron Limited Plasma Processing apparatus and method
JP4699127B2 (ja) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003405A1 (en) 2001-06-29 2003-01-09 Lam Research Corporation Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
KR20040094690A (ko) * 2002-02-14 2004-11-10 램 리서치 코퍼레이션 플라즈마 처리 장치 및 방법
KR20050016012A (ko) * 2003-08-01 2005-02-21 동경 엘렉트론 주식회사 플라즈마 에칭방법 및 플라즈마 처리장치
US20060037703A1 (en) 2004-06-21 2006-02-23 Tokyo Electron Limited Plasma processing apparatus and method

Also Published As

Publication number Publication date
JP2007266533A (ja) 2007-10-11
JP5031252B2 (ja) 2012-09-19
EP1840937B1 (en) 2014-05-07
EP1840937A1 (en) 2007-10-03
CN101047114A (zh) 2007-10-03
KR20070098643A (ko) 2007-10-05
CN101661863A (zh) 2010-03-03
CN101661863B (zh) 2013-05-29
TWI431683B (zh) 2014-03-21
TW200802598A (en) 2008-01-01

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