KR100914941B1 - 산화 용이성 또는 흡습 용이성 물질의 용기 및 산화 용이성또는 흡습 용이성 물질의 가열 및 가압 처리 방법 - Google Patents

산화 용이성 또는 흡습 용이성 물질의 용기 및 산화 용이성또는 흡습 용이성 물질의 가열 및 가압 처리 방법

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Publication number
KR100914941B1
KR100914941B1 KR1020077018254A KR20077018254A KR100914941B1 KR 100914941 B1 KR100914941 B1 KR 100914941B1 KR 1020077018254 A KR1020077018254 A KR 1020077018254A KR 20077018254 A KR20077018254 A KR 20077018254A KR 100914941 B1 KR100914941 B1 KR 100914941B1
Authority
KR
South Korea
Prior art keywords
container
heating
opening
sealing means
oxidizing
Prior art date
Application number
KR1020077018254A
Other languages
English (en)
Korean (ko)
Other versions
KR20070094652A (ko
Inventor
마코토 이와이
가츠히로 이마이
슈우헤이 히가시하라
Original Assignee
니뽄 가이시 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 니뽄 가이시 가부시키가이샤 filed Critical 니뽄 가이시 가부시키가이샤
Publication of KR20070094652A publication Critical patent/KR20070094652A/ko
Application granted granted Critical
Publication of KR100914941B1 publication Critical patent/KR100914941B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020077018254A 2005-03-14 2006-03-14 산화 용이성 또는 흡습 용이성 물질의 용기 및 산화 용이성또는 흡습 용이성 물질의 가열 및 가압 처리 방법 KR100914941B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00070649 2005-03-14
JP2005070649 2005-03-14

Publications (2)

Publication Number Publication Date
KR20070094652A KR20070094652A (ko) 2007-09-20
KR100914941B1 true KR100914941B1 (ko) 2009-08-31

Family

ID=36991802

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077018254A KR100914941B1 (ko) 2005-03-14 2006-03-14 산화 용이성 또는 흡습 용이성 물질의 용기 및 산화 용이성또는 흡습 용이성 물질의 가열 및 가압 처리 방법

Country Status (4)

Country Link
JP (1) JP4963108B2 (ja)
KR (1) KR100914941B1 (ja)
CN (1) CN101137774B (ja)
WO (1) WO2006098458A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007108338A1 (ja) 2006-03-23 2007-09-27 Ngk Insulators, Ltd. 窒化物単結晶の製造方法および装置
WO2007122866A1 (ja) 2006-03-23 2007-11-01 Ngk Insulators, Ltd. 単結晶の製造方法
JP5177557B2 (ja) 2006-03-23 2013-04-03 日本碍子株式会社 窒化物単結晶の製造装置
US9803293B2 (en) 2008-02-25 2017-10-31 Sixpoint Materials, Inc. Method for producing group III-nitride wafers and group III-nitride wafers
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
JP4927691B2 (ja) * 2007-11-29 2012-05-09 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長装置および成長方法
WO2009149300A1 (en) 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
EP2281076A1 (en) 2008-06-04 2011-02-09 Sixpoint Materials, Inc. Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
JP5701754B2 (ja) 2009-06-11 2015-04-15 日本碍子株式会社 Ｉｉｉ族金属窒化物単結晶の育成方法およびこれに用いる反応容器
JP5291648B2 (ja) * 2010-03-17 2013-09-18 日本碍子株式会社 窒化物結晶の製造装置及び製造方法
WO2015137266A1 (ja) * 2014-03-10 2015-09-17 日本碍子株式会社 窒化物結晶の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003212696A (ja) * 2002-01-18 2003-07-30 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法および結晶成長装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4433696B2 (ja) * 2003-06-17 2010-03-17 三菱化学株式会社 窒化物結晶の製造方法
JP2005298269A (ja) * 2004-04-12 2005-10-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003212696A (ja) * 2002-01-18 2003-07-30 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法および結晶成長装置

Also Published As

Publication number Publication date
WO2006098458A1 (ja) 2006-09-21
CN101137774A (zh) 2008-03-05
CN101137774B (zh) 2012-03-21
JP4963108B2 (ja) 2012-06-27
JPWO2006098458A1 (ja) 2008-08-28
KR20070094652A (ko) 2007-09-20

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