KR100911697B1 - 형상측정장치, 형상측정방법, 및 노광장치 - Google Patents

형상측정장치, 형상측정방법, 및 노광장치 Download PDF

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Publication number
KR100911697B1
KR100911697B1 KR1020070117056A KR20070117056A KR100911697B1 KR 100911697 B1 KR100911697 B1 KR 100911697B1 KR 1020070117056 A KR1020070117056 A KR 1020070117056A KR 20070117056 A KR20070117056 A KR 20070117056A KR 100911697 B1 KR100911697 B1 KR 100911697B1
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KR
South Korea
Prior art keywords
light
measurement
wafer
measured
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070117056A
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English (en)
Korean (ko)
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KR20080059037A (ko
Inventor
타카히로 마츠모토
료 사사키
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20080059037A publication Critical patent/KR20080059037A/ko
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Publication of KR100911697B1 publication Critical patent/KR100911697B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070117056A 2006-12-22 2007-11-16 형상측정장치, 형상측정방법, 및 노광장치 Expired - Fee Related KR100911697B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00346203 2006-12-22
JP2006346203 2006-12-22
JP2007278962A JP5137526B2 (ja) 2006-12-22 2007-10-26 形状測定装置、形状測定方法、および露光装置
JPJP-P-2007-00278962 2007-10-26

Publications (2)

Publication Number Publication Date
KR20080059037A KR20080059037A (ko) 2008-06-26
KR100911697B1 true KR100911697B1 (ko) 2009-08-10

Family

ID=39702922

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070117056A Expired - Fee Related KR100911697B1 (ko) 2006-12-22 2007-11-16 형상측정장치, 형상측정방법, 및 노광장치

Country Status (3)

Country Link
JP (1) JP5137526B2 (enrdf_load_stackoverflow)
KR (1) KR100911697B1 (enrdf_load_stackoverflow)
TW (1) TWI358529B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454020B2 (ja) * 2009-09-03 2014-03-26 株式会社ニコン 角速度検出装置
JP5432680B2 (ja) * 2009-11-27 2014-03-05 株式会社ミツトヨ 斜入射干渉計
JP6110897B2 (ja) * 2015-06-23 2017-04-05 Ckd株式会社 三次元計測装置
US10094774B2 (en) 2015-08-12 2018-10-09 Industrial Technology Research Institute Scattering measurement system and method
CN118243015B (zh) * 2024-05-28 2024-08-20 匠岭科技(上海)有限公司 表面三维形貌的测量方法、装置、设备、介质和程序产品

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249351B1 (en) 1999-06-03 2001-06-19 Zygo Corporation Grazing incidence interferometer and method
WO2005022082A1 (en) 2003-08-25 2005-03-10 Asml Holding N.V. High-rresoulution gas gauge proximity sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583611B2 (ja) * 2001-01-11 2010-11-17 富士フイルム株式会社 斜入射干渉計装置
JP2002286409A (ja) * 2001-03-26 2002-10-03 Fuji Photo Optical Co Ltd 干渉計装置
WO2005029192A2 (en) * 2003-09-15 2005-03-31 Zygo Corporation Surface triangulation and profiling through a thin film coating

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249351B1 (en) 1999-06-03 2001-06-19 Zygo Corporation Grazing incidence interferometer and method
WO2005022082A1 (en) 2003-08-25 2005-03-10 Asml Holding N.V. High-rresoulution gas gauge proximity sensor

Also Published As

Publication number Publication date
JP5137526B2 (ja) 2013-02-06
KR20080059037A (ko) 2008-06-26
TWI358529B (en) 2012-02-21
TW200834038A (en) 2008-08-16
JP2008175803A (ja) 2008-07-31

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