KR100908939B1 - 기판의 플라즈마 처리장치 및 플라즈마 처리방법 - Google Patents

기판의 플라즈마 처리장치 및 플라즈마 처리방법 Download PDF

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Publication number
KR100908939B1
KR100908939B1 KR1020070069246A KR20070069246A KR100908939B1 KR 100908939 B1 KR100908939 B1 KR 100908939B1 KR 1020070069246 A KR1020070069246 A KR 1020070069246A KR 20070069246 A KR20070069246 A KR 20070069246A KR 100908939 B1 KR100908939 B1 KR 100908939B1
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KR
South Korea
Prior art keywords
voltage
electrode
substrate
plasma
pulse
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Expired - Fee Related
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KR1020070069246A
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English (en)
Korean (ko)
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KR20080020463A (ko
Inventor
우이 아키오
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가부시끼가이샤 도시바
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Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20080020463A publication Critical patent/KR20080020463A/ko
Application granted granted Critical
Publication of KR100908939B1 publication Critical patent/KR100908939B1/ko
Assigned to 도시바 메모리 가부시키가이샤 reassignment 도시바 메모리 가부시키가이샤 권리의 전부이전등록 Assignors: 가부시끼가이샤 도시바
Assigned to 키오시아 가부시키가이샤 reassignment 키오시아 가부시키가이샤 권리의 전부이전등록 Assignors: 도시바 메모리 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020070069246A 2006-08-31 2007-07-10 기판의 플라즈마 처리장치 및 플라즈마 처리방법 Expired - Fee Related KR100908939B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006237012 2006-08-31
JPJP-P-2006-00237012 2006-08-31
JP2007026867A JP4714166B2 (ja) 2006-08-31 2007-02-06 基板のプラズマ処理装置及びプラズマ処理方法
JPJP-P-2007-00026867 2007-02-06

Publications (2)

Publication Number Publication Date
KR20080020463A KR20080020463A (ko) 2008-03-05
KR100908939B1 true KR100908939B1 (ko) 2009-07-22

Family

ID=39355771

Family Applications (1)

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KR1020070069246A Expired - Fee Related KR100908939B1 (ko) 2006-08-31 2007-07-10 기판의 플라즈마 처리장치 및 플라즈마 처리방법

Country Status (3)

Country Link
JP (1) JP4714166B2 (enExample)
KR (1) KR100908939B1 (enExample)
TW (1) TW200811947A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101361217B1 (ko) 2009-09-29 2014-02-10 가부시끼가이샤 도시바 기판 처리 장치 및 기판 처리 방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4660498B2 (ja) * 2007-03-27 2011-03-30 株式会社東芝 基板のプラズマ処理装置
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
KR101027471B1 (ko) * 2008-10-02 2011-04-06 엘아이지에이디피 주식회사 플라즈마 처리방법 및 처리장치
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP2012104382A (ja) * 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
JP6207880B2 (ja) 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US9460894B2 (en) * 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US9966231B2 (en) * 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7061922B2 (ja) 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
TWI912719B (zh) * 2018-07-09 2026-01-21 美商蘭姆研究公司 交換器、功率供應系統、基板處理系統、及供應功率的方法
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102477298B1 (ko) * 2021-02-17 2022-12-12 부산대학교 산학협력단 플라즈마 공정용 이온에너지 제어 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116892A (ja) * 1997-06-24 1999-01-22 Nec Corp プラズマ処理方法
JPH1167725A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd プラズマエッチング装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255782A (ja) * 1995-03-16 1996-10-01 Toshiba Corp プラズマ表面処理装置
JPH10270419A (ja) * 1997-03-24 1998-10-09 Hitachi Ltd プラズマエッチング装置およびプラズマエッチング方法
JP2000156370A (ja) * 1998-09-16 2000-06-06 Tokyo Electron Ltd プラズマ処理方法
JP4319514B2 (ja) * 2002-11-29 2009-08-26 株式会社日立ハイテクノロジーズ サグ補償機能付き高周波電源を有するプラズマ処理装置
US7517801B1 (en) * 2003-12-23 2009-04-14 Lam Research Corporation Method for selectivity control in a plasma processing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116892A (ja) * 1997-06-24 1999-01-22 Nec Corp プラズマ処理方法
JPH1167725A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd プラズマエッチング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101361217B1 (ko) 2009-09-29 2014-02-10 가부시끼가이샤 도시바 기판 처리 장치 및 기판 처리 방법

Also Published As

Publication number Publication date
JP4714166B2 (ja) 2011-06-29
KR20080020463A (ko) 2008-03-05
TWI380361B (enExample) 2012-12-21
TW200811947A (en) 2008-03-01
JP2008085288A (ja) 2008-04-10

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