JP4714166B2 - 基板のプラズマ処理装置及びプラズマ処理方法 - Google Patents

基板のプラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP4714166B2
JP4714166B2 JP2007026867A JP2007026867A JP4714166B2 JP 4714166 B2 JP4714166 B2 JP 4714166B2 JP 2007026867 A JP2007026867 A JP 2007026867A JP 2007026867 A JP2007026867 A JP 2007026867A JP 4714166 B2 JP4714166 B2 JP 4714166B2
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Japan
Prior art keywords
voltage
substrate
electrode
energy
plasma
Prior art date
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Expired - Fee Related
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JP2007026867A
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English (en)
Japanese (ja)
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JP2008085288A (ja
Inventor
明生 宇井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007026867A priority Critical patent/JP4714166B2/ja
Priority to TW096123352A priority patent/TW200811947A/zh
Priority to KR1020070069246A priority patent/KR100908939B1/ko
Priority to CN2007101488328A priority patent/CN101137269B/zh
Publication of JP2008085288A publication Critical patent/JP2008085288A/ja
Application granted granted Critical
Publication of JP4714166B2 publication Critical patent/JP4714166B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2007026867A 2006-08-31 2007-02-06 基板のプラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP4714166B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007026867A JP4714166B2 (ja) 2006-08-31 2007-02-06 基板のプラズマ処理装置及びプラズマ処理方法
TW096123352A TW200811947A (en) 2006-08-31 2007-06-27 Plasma processing apparatus of substrate and plasma processing method thereof
KR1020070069246A KR100908939B1 (ko) 2006-08-31 2007-07-10 기판의 플라즈마 처리장치 및 플라즈마 처리방법
CN2007101488328A CN101137269B (zh) 2006-08-31 2007-08-31 基板的等离子处理装置和等离子处理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006237012 2006-08-31
JP2006237012 2006-08-31
JP2007026867A JP4714166B2 (ja) 2006-08-31 2007-02-06 基板のプラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2008085288A JP2008085288A (ja) 2008-04-10
JP4714166B2 true JP4714166B2 (ja) 2011-06-29

Family

ID=39355771

Family Applications (1)

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JP2007026867A Expired - Fee Related JP4714166B2 (ja) 2006-08-31 2007-02-06 基板のプラズマ処理装置及びプラズマ処理方法

Country Status (3)

Country Link
JP (1) JP4714166B2 (enExample)
KR (1) KR100908939B1 (enExample)
TW (1) TW200811947A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190125195A (ko) 2018-04-27 2019-11-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4660498B2 (ja) * 2007-03-27 2011-03-30 株式会社東芝 基板のプラズマ処理装置
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
KR101027471B1 (ko) * 2008-10-02 2011-04-06 엘아이지에이디피 주식회사 플라즈마 처리방법 및 처리장치
WO2011039793A1 (ja) 2009-09-29 2011-04-07 株式会社 東芝 基板処理装置
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP2012104382A (ja) * 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
JP6207880B2 (ja) 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US9460894B2 (en) * 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US9966231B2 (en) * 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
TWI912719B (zh) * 2018-07-09 2026-01-21 美商蘭姆研究公司 交換器、功率供應系統、基板處理系統、及供應功率的方法
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102477298B1 (ko) * 2021-02-17 2022-12-12 부산대학교 산학협력단 플라즈마 공정용 이온에너지 제어 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255782A (ja) * 1995-03-16 1996-10-01 Toshiba Corp プラズマ表面処理装置
JPH10270419A (ja) * 1997-03-24 1998-10-09 Hitachi Ltd プラズマエッチング装置およびプラズマエッチング方法
JP3042450B2 (ja) * 1997-06-24 2000-05-15 日本電気株式会社 プラズマ処理方法
JPH1167725A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd プラズマエッチング装置
JP2000156370A (ja) * 1998-09-16 2000-06-06 Tokyo Electron Ltd プラズマ処理方法
JP4319514B2 (ja) * 2002-11-29 2009-08-26 株式会社日立ハイテクノロジーズ サグ補償機能付き高周波電源を有するプラズマ処理装置
US7517801B1 (en) * 2003-12-23 2009-04-14 Lam Research Corporation Method for selectivity control in a plasma processing system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190125195A (ko) 2018-04-27 2019-11-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
US12537168B2 (en) 2018-04-27 2026-01-27 Tokyo Electron Limited Plasma processing method and plasma processing apparatus

Also Published As

Publication number Publication date
KR20080020463A (ko) 2008-03-05
TWI380361B (enExample) 2012-12-21
TW200811947A (en) 2008-03-01
KR100908939B1 (ko) 2009-07-22
JP2008085288A (ja) 2008-04-10

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