CN101137269B - 基板的等离子处理装置和等离子处理方法 - Google Patents
基板的等离子处理装置和等离子处理方法 Download PDFInfo
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- CN101137269B CN101137269B CN2007101488328A CN200710148832A CN101137269B CN 101137269 B CN101137269 B CN 101137269B CN 2007101488328 A CN2007101488328 A CN 2007101488328A CN 200710148832 A CN200710148832 A CN 200710148832A CN 101137269 B CN101137269 B CN 101137269B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006237012 | 2006-08-31 | ||
JP2006237012 | 2006-08-31 | ||
JP2006-237012 | 2006-08-31 | ||
JP2007026867A JP4714166B2 (ja) | 2006-08-31 | 2007-02-06 | 基板のプラズマ処理装置及びプラズマ処理方法 |
JP2007-026867 | 2007-02-06 | ||
JP2007026867 | 2007-02-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101137269A CN101137269A (zh) | 2008-03-05 |
CN101137269B true CN101137269B (zh) | 2012-10-03 |
Family
ID=39151978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101488328A Active CN101137269B (zh) | 2006-08-31 | 2007-08-31 | 基板的等离子处理装置和等离子处理方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7851367B2 (zh) |
CN (1) | CN101137269B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4592867B2 (ja) * | 2000-03-27 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 平行平板形プラズマcvd装置及びドライクリーニングの方法 |
JP4660498B2 (ja) * | 2007-03-27 | 2011-03-30 | 株式会社東芝 | 基板のプラズマ処理装置 |
JP4607930B2 (ja) | 2007-09-14 | 2011-01-05 | 株式会社東芝 | プラズマ処理装置およびプラズマ処理方法 |
JP5224837B2 (ja) * | 2008-02-01 | 2013-07-03 | 株式会社東芝 | 基板のプラズマ処理装置及びプラズマ処理方法 |
JP5295833B2 (ja) * | 2008-09-24 | 2013-09-18 | 株式会社東芝 | 基板処理装置および基板処理方法 |
US8382999B2 (en) * | 2009-03-26 | 2013-02-26 | Applied Materials, Inc. | Pulsed plasma high aspect ratio dielectric process |
EP2407998B1 (en) | 2010-07-15 | 2019-02-13 | Ecole Polytechnique | Plasma processing in a capacitively-coupled reactor with trapezoidal-waveform excitation |
JP5172928B2 (ja) * | 2010-09-30 | 2013-03-27 | 株式会社東芝 | 基板処理方法および基板処理装置 |
JP6207880B2 (ja) | 2012-09-26 | 2017-10-04 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
NL2023935B1 (en) * | 2019-10-02 | 2021-05-31 | Prodrive Tech Bv | Determining an optimal ion energy for plasma processing of a dielectric substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6084198A (en) * | 1997-04-28 | 2000-07-04 | Birx; Daniel | Plasma gun and methods for the use thereof |
CN1382829A (zh) * | 2001-04-27 | 2002-12-04 | 中国科学院物理研究所 | 一种管状工件内表面改性的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5741396A (en) * | 1994-04-29 | 1998-04-21 | Texas Instruments Incorporated | Isotropic nitride stripping |
JP3042450B2 (ja) | 1997-06-24 | 2000-05-15 | 日本電気株式会社 | プラズマ処理方法 |
JPH1167725A (ja) | 1997-08-18 | 1999-03-09 | Hitachi Ltd | プラズマエッチング装置 |
US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
JP2003234331A (ja) * | 2001-12-05 | 2003-08-22 | Tokyo Electron Ltd | プラズマエッチング方法およびプラズマエッチング装置 |
JP4515064B2 (ja) | 2003-09-11 | 2010-07-28 | 学校法人鶴学園 | 炭素系薄膜用成膜装置,成膜装置,及び成膜方法 |
US7244474B2 (en) * | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
US7300684B2 (en) * | 2004-07-15 | 2007-11-27 | Sub-One Technology, Inc. | Method and system for coating internal surfaces of prefabricated process piping in the field |
US7615931B2 (en) * | 2005-05-02 | 2009-11-10 | International Technology Center | Pulsed dielectric barrier discharge |
JP2008060429A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 基板のプラズマ処理装置及びプラズマ処理方法 |
-
2007
- 2007-03-15 US US11/724,308 patent/US7851367B2/en active Active
- 2007-08-31 CN CN2007101488328A patent/CN101137269B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6084198A (en) * | 1997-04-28 | 2000-07-04 | Birx; Daniel | Plasma gun and methods for the use thereof |
CN1382829A (zh) * | 2001-04-27 | 2002-12-04 | 中国科学院物理研究所 | 一种管状工件内表面改性的方法 |
Non-Patent Citations (1)
Title |
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JP特开2005-82887A 2005.03.31 |
Also Published As
Publication number | Publication date |
---|---|
US20080057222A1 (en) | 2008-03-06 |
CN101137269A (zh) | 2008-03-05 |
US7851367B2 (en) | 2010-12-14 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170802 Address after: Tokyo, Japan port area Zhi Pu Ding Ding 1, No. 1 Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan port area Zhi Pu Ding Ding 1, No. 1 Patentee before: Toshiba Corp. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: No.21, No.1, Shipu sandingmu, dugang District, Tokyo, Japan Patentee after: Kioxia Co.,Ltd. Address before: Tokyo, Japan, the port district, Zhi Pu Ding Ding, No. 1, No. 1 Patentee before: Toshiba memory Co.,Ltd. Address after: Tokyo, Japan, the port district, Zhi Pu Ding Ding, No. 1, No. 1 Patentee after: Toshiba memory Co.,Ltd. Address before: 5 / F, palace building, No. 1, No. 1, Marunouchi, Chiyoda District, Tokyo, Japan Patentee before: Pangea Co.,Ltd. |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220121 Address after: 5 / F, palace building, No. 1, No. 1, Marunouchi, Chiyoda District, Tokyo, Japan Patentee after: Pangea Co.,Ltd. Address before: Tokyo, Japan, the port district, Zhi Pu Ding Ding, No. 1, No. 1 Patentee before: TOSHIBA MEMORY Corp. |
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TR01 | Transfer of patent right |