KR100889331B1 - 웨이퍼용 박막 스프레이 코팅장치 - Google Patents
웨이퍼용 박막 스프레이 코팅장치 Download PDFInfo
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- KR100889331B1 KR100889331B1 KR1020070098769A KR20070098769A KR100889331B1 KR 100889331 B1 KR100889331 B1 KR 100889331B1 KR 1020070098769 A KR1020070098769 A KR 1020070098769A KR 20070098769 A KR20070098769 A KR 20070098769A KR 100889331 B1 KR100889331 B1 KR 100889331B1
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- 238000005507 spraying Methods 0.000 title claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 38
- 239000011248 coating agent Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 239000007921 spray Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 25
- 239000000428 dust Substances 0.000 claims description 20
- 239000006185 dispersion Substances 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 40
- 239000010410 layer Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
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- 238000007599 discharging Methods 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (3)
- 코팅 작업공간을 외부와 차단시키는 밀폐형 케이스와, 웨이퍼가 올려지도록 상기 케이스 내부에 설치되는 워킹테이블과, 워킹테이블 상부에 위치되어 상기 웨이퍼의 상부에 코팅액을 분사시키는 스프레이건과, 케이스 하부에 설치되어 케이스 내부의 공기를 외부로 배출시키는 배기장치를 구비한 웨이퍼용 박막 스프레이 코팅장치에 있어서,상기 케이스의 상부 전면에는 균일하게 분포된 다수의 외기흡입공을 가진 외기흡입필터가 수평으로 설치되고 상기 케이스의 하부 전면에는 상기 외기흡입공들의 단면적과 동일한 단면적을 가지도록 균일하게 분포된 다수의 배기공을 가진 배기압력 분산 및 포집의 역할을 수행하는 배플필터가 수평으로 설치되어, 상기 배기장치가 가동될 경우에 각 외기흡입공 및 베플필터의 배기공에 정압(定壓)이 균일하게 걸리면서 케이스 내부에서의 공기흐름이 연직하부를 향하는 일정한 유속을 갖는 층류를 형성시키도록 한 것을 특징으로 웨이퍼용 박막 스프레이 코팅장치.
- 제 1항에 있어서,상기 배플필터는 격자형 단면구조로 이루어진 배기공을 갖는 것을 특징으로 하는 웨이퍼용 박막 스프레이 코팅장치.
- 제 1항에 있어서,상기 배플필터의 하부에는 배플필터를 통과한 미세 코팅액 분진들이 외부로 배출되는 것을 차단하는 동시에 배기압력의 분산을 보조하는 집진필터가 더 구비된 것을 특징으로 하는 웨이퍼용 박막 스프레이 코팅장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070098769A KR100889331B1 (ko) | 2007-10-01 | 2007-10-01 | 웨이퍼용 박막 스프레이 코팅장치 |
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KR1020070098769A KR100889331B1 (ko) | 2007-10-01 | 2007-10-01 | 웨이퍼용 박막 스프레이 코팅장치 |
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KR100889331B1 true KR100889331B1 (ko) | 2009-03-18 |
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KR1020070098769A KR100889331B1 (ko) | 2007-10-01 | 2007-10-01 | 웨이퍼용 박막 스프레이 코팅장치 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101312685B1 (ko) | 2013-01-03 | 2013-09-27 | 최영신 | 대면적 박막 코팅장치의 진공플레이트 및 그 가공방법 |
KR20140071987A (ko) * | 2014-05-02 | 2014-06-12 | 주식회사 유광 | 멀티형 본딩 지그 장치 및 본딩 방법 |
KR20200103970A (ko) | 2019-02-26 | 2020-09-03 | 한국전기연구원 | 대면적 기판 코팅 장치 및 이의 코팅 방법 |
KR20210015989A (ko) * | 2019-03-18 | 2021-02-10 | 티티앤에스 주식회사 | 혼합분말이 함유된 코팅용액을 기판에 코팅하기 위한 코팅장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03114419U (ko) * | 1990-03-09 | 1991-11-25 | ||
US20050260345A1 (en) | 2003-10-06 | 2005-11-24 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
-
2007
- 2007-10-01 KR KR1020070098769A patent/KR100889331B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03114419U (ko) * | 1990-03-09 | 1991-11-25 | ||
US20050260345A1 (en) | 2003-10-06 | 2005-11-24 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101312685B1 (ko) | 2013-01-03 | 2013-09-27 | 최영신 | 대면적 박막 코팅장치의 진공플레이트 및 그 가공방법 |
KR20140071987A (ko) * | 2014-05-02 | 2014-06-12 | 주식회사 유광 | 멀티형 본딩 지그 장치 및 본딩 방법 |
KR101668086B1 (ko) | 2014-05-02 | 2016-10-24 | 주식회사 유광 | 멀티형 본딩 지그 장치 및 본딩 방법 |
KR20200103970A (ko) | 2019-02-26 | 2020-09-03 | 한국전기연구원 | 대면적 기판 코팅 장치 및 이의 코팅 방법 |
KR20210015989A (ko) * | 2019-03-18 | 2021-02-10 | 티티앤에스 주식회사 | 혼합분말이 함유된 코팅용액을 기판에 코팅하기 위한 코팅장치 |
KR102344843B1 (ko) * | 2019-03-18 | 2021-12-29 | 티티앤에스 주식회사 | 혼합분말이 함유된 코팅용액을 기판에 코팅하기 위한 코팅장치 |
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