KR100878938B1 - 노광장치 - Google Patents

노광장치 Download PDF

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Publication number
KR100878938B1
KR100878938B1 KR1020070042261A KR20070042261A KR100878938B1 KR 100878938 B1 KR100878938 B1 KR 100878938B1 KR 1020070042261 A KR1020070042261 A KR 1020070042261A KR 20070042261 A KR20070042261 A KR 20070042261A KR 100878938 B1 KR100878938 B1 KR 100878938B1
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KR
South Korea
Prior art keywords
lights
pattern
optical system
light
exposure apparatus
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070042261A
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English (en)
Korean (ko)
Other versions
KR20070106936A (ko
Inventor
아키노리 오쿠보
아키요시 스즈키
Original Assignee
캐논 가부시끼가이샤
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Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20070106936A publication Critical patent/KR20070106936A/ko
Application granted granted Critical
Publication of KR100878938B1 publication Critical patent/KR100878938B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070042261A 2006-05-01 2007-05-01 노광장치 Expired - Fee Related KR100878938B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006127773A JP2007299993A (ja) 2006-05-01 2006-05-01 露光装置
JPJP-P-2006-00127773 2006-05-01

Publications (2)

Publication Number Publication Date
KR20070106936A KR20070106936A (ko) 2007-11-06
KR100878938B1 true KR100878938B1 (ko) 2009-01-19

Family

ID=38647955

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070042261A Expired - Fee Related KR100878938B1 (ko) 2006-05-01 2007-05-01 노광장치

Country Status (4)

Country Link
US (1) US8085384B2 (enExample)
JP (1) JP2007299993A (enExample)
KR (1) KR100878938B1 (enExample)
TW (1) TW200809919A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5182588B2 (ja) * 2008-04-29 2013-04-17 株式会社ニコン オプティカルインテグレータ、照明光学系、露光装置、およびデバイス製造方法
JP5294490B2 (ja) * 2009-12-22 2013-09-18 株式会社ブイ・テクノロジー フォトマスク
KR101131321B1 (ko) 2010-08-03 2012-04-04 경희대학교 산학협력단 비대칭적 투과 특성을 가지는 광차단 필터
JP2013072845A (ja) * 2011-09-29 2013-04-22 Nuflare Technology Inc パターン検査装置及びパターン検査方法
KR102008983B1 (ko) * 2012-09-14 2019-08-12 김정식 극미세 금속 부품의 제조방법과 그에 의한 극미세 금속 부품
US10197920B2 (en) 2011-11-16 2019-02-05 Nak Hoon SEONG Linear light source generating device, exposure having linear light source generating device, and lenticular system used for linear light source generating device
US9261793B2 (en) 2012-09-14 2016-02-16 Globalfoundries Inc. Image optimization using pupil filters in projecting printing systems with fixed or restricted illumination angular distribution
US9575412B2 (en) * 2014-03-31 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing pole imbalance by adjusting exposure intensity

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980042721A (ko) * 1996-11-25 1998-08-17 에드워드 에이. 도링 공간 제어 가능하고 부분적으로 코히어런스한 광조사 시스템
KR20010031135A (ko) * 1997-10-16 2001-04-16 모리시타 요이찌 홀로그램소자, 편광분리소자, 편광조명장치 및 화상표시장치
KR20020000494A (ko) * 2000-06-22 2002-01-05 에스브이지 리도그래피 시스템즈, 아이엔씨. 부분적으로 코히런스한 광을 공간적으로 제어가능하게하여 포토리소그래피 시스템에서의 라인폭 변화를보상하는 광조사 시스템

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242770A (en) * 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
US6304317B1 (en) * 1993-07-15 2001-10-16 Nikon Corporation Projection apparatus and method
JP3060357B2 (ja) * 1994-06-22 2000-07-10 キヤノン株式会社 走査型露光装置及び該走査型露光装置を用いてデバイスを製造する方法
JP4310816B2 (ja) * 1997-03-14 2009-08-12 株式会社ニコン 照明装置、投影露光装置、デバイスの製造方法、及び投影露光装置の調整方法
GB2325128B (en) * 1997-05-02 2002-06-19 Lsi Logic Corp Demodulating digital video broadcast signals
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6563567B1 (en) * 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
US6107011A (en) * 1999-01-06 2000-08-22 Creo Srl Method of high resolution optical scanning utilizing primary and secondary masks
US6096461A (en) * 1999-01-06 2000-08-01 Creo Srl Laser exposure utilizing secondary mask capable of concentrating exposure light onto primary mask
TW587199B (en) * 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus
JP2001195901A (ja) * 2000-01-14 2001-07-19 Nippon Sheet Glass Co Ltd 照明装置
US6567155B1 (en) * 2000-03-16 2003-05-20 Intel Corporation Method for improved resolution of patterning using binary masks with pupil filters
US6811953B2 (en) * 2000-05-22 2004-11-02 Nikon Corporation Exposure apparatus, method for manufacturing therof, method for exposing and method for manufacturing microdevice
EP1480080A1 (en) * 2003-05-22 2004-11-24 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980042721A (ko) * 1996-11-25 1998-08-17 에드워드 에이. 도링 공간 제어 가능하고 부분적으로 코히어런스한 광조사 시스템
KR20010031135A (ko) * 1997-10-16 2001-04-16 모리시타 요이찌 홀로그램소자, 편광분리소자, 편광조명장치 및 화상표시장치
KR20020000494A (ko) * 2000-06-22 2002-01-05 에스브이지 리도그래피 시스템즈, 아이엔씨. 부분적으로 코히런스한 광을 공간적으로 제어가능하게하여 포토리소그래피 시스템에서의 라인폭 변화를보상하는 광조사 시스템

Also Published As

Publication number Publication date
US8085384B2 (en) 2011-12-27
JP2007299993A (ja) 2007-11-15
US20070252968A1 (en) 2007-11-01
KR20070106936A (ko) 2007-11-06
TW200809919A (en) 2008-02-16

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