KR100838215B1 - 반사성 정극 및 그것을 사용한 질화 갈륨계 화합물 반도체발광 소자 - Google Patents
반사성 정극 및 그것을 사용한 질화 갈륨계 화합물 반도체발광 소자 Download PDFInfo
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- KR100838215B1 KR100838215B1 KR1020067024019A KR20067024019A KR100838215B1 KR 100838215 B1 KR100838215 B1 KR 100838215B1 KR 1020067024019 A KR1020067024019 A KR 1020067024019A KR 20067024019 A KR20067024019 A KR 20067024019A KR 100838215 B1 KR100838215 B1 KR 100838215B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 153
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 6
- 150000001875 compounds Chemical class 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 172
- 239000002184 metal Substances 0.000 claims abstract description 172
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 37
- -1 gallium nitride compound Chemical class 0.000 claims abstract description 34
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000000956 alloy Substances 0.000 claims abstract description 21
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 21
- 238000005304 joining Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 31
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 19
- 150000002739 metals Chemical class 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- 229910052703 rhodium Inorganic materials 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052762 osmium Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052713 technetium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 2
- 239000010944 silver (metal) Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 19
- 230000002441 reversible effect Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000000470 constituent Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
Description
접촉금속층 | 반사층 | 오버코트층 | 접합패드층 | 소자 특성(100시간의 에이징 후) | ||||
재료 | 막두께 (nm) | 순방향전압(V) | 역방향전압(V) | 출력(mW) | ||||
실시예1 | Pt | 2 | Ag | Au | - | 3.3 | >20 | 6.5 |
실시예2 | Pt | 2 | Al | Au | - | 3.3 | >20 | 6.3 |
실시예3 | Pt | 2 | Al | Pt | Au | 3.3 | >20 | 6.5 |
실시예4 | Pt | 2 | Ag | W | Au | 3.3 | >20 | 6.5 |
실시예5 | Pt | 2 | Ag | Au | - | 3.4 | >20 | 6.5 |
실시예6 | Pt | 1 | Ag | Au | - | 3.6 | >20 | 6.7 |
실시예7 | Pt | 0.5 | Ag | Au | - | 4 | >20 | 6.9 |
실시예8 | Pt | 5 | Ag | Au | - | 3.3 | >20 | 6 |
비교예 | 접촉금속 없음 | 0 | Ag | Au | - | 3.6 | 5 | 6.6 |
가열 온도(℃) | 순방향 전압(V) | |
실시예 1 | - | 3.3 |
실시예 9 | 200 | 3.3 |
실시예 10 | 300 | 3.3 |
실시예 11 | 400 | 3.8 |
Claims (21)
- p형 반도체층을 접합하는 접촉 금속층 및 상기 접촉 금속층상의 반사층을 포함하는 반도체 발광 소자용 반사성 정극에 있어서,상기 접촉 금속층은 백금족 금속 또는 백금족 금속을 함유하는 합금으로 이루어지고,상기 반사층은 Ag, Al 및 Ag 및 Al 중 하나 이상을 함유하는 합금으로 이루어지는 군에서 선택되는 하나 이상의 금속으로 이루어지고,p형 반도체층측상의 접촉 금속층의 표면상에 III족 금속을 함유하는 반도체 금속 함유층이 존재하는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 1항에 있어서, 상기 접촉 금속층은 Pt 또는 그것의 합금으로 이루어지는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 1항에 있어서, 상기 접촉 금속층의 두께는 0.1~30nm의 범위내인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 3항에 있어서, 상기 접촉 금속층의 두께는 1~30nm의 범위내인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 3항에 있어서, 상기 접촉 금속층의 두께는 0.1~4.9nm의 범위내인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 삭제
- 제 1항에 있어서, 상기 접촉 금속층은 RF방전 스퍼터링법으로 형성되는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 1항에 있어서, 상기 반사층은 Ag 또는 그것의 합금인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 1항에 있어서, 상기 반사층의 두께는 30~500nm인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 1항에 있어서, 상기 반사층은 DC방전 스퍼터링법으로 형성되는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 1항에 있어서, 접촉 금속층 및 반사층을 피복하는 오버코트층을 더 포함하는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 11항에 있어서, 상기 오버코트층의 두께는 10nm 이상인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 11항에 있어서, 상기 반사층의 상부면을 접합하는 오버코트층의 적어도 일부분이 금속인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 13항에 있어서, 상기 오버코트층은 Ti, V, Cr, Mn, Fe, Co, Ni, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, Pt, Au 및 이들 금속 중 어느 하나를 함유하는 합금으로 이루어지는 군으로부터 선택되는 하나 이상의 금속인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 14항에 있어서, 상기 오버코트층은 Ru, Rh, Pd, Os, Ir, Pt, Au 및 이들 금속 중 어느 하나를 함유하는 합금으로 이루어지는 군으로부터 선택되는 하나 이상의 금속인 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 11항에 있어서, 상기 오버코트층은 p형 반도체층과 오믹 접촉하는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 16항에 있어서, 상기 오버코트층은 접촉 저항 1×10-3Ωcm2이하로 p형 반도체층과 오믹 접촉하는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- 제 1항에 있어서, 상기 접촉 금속층을 형성한 후, 350℃ 초과의 온도에서 열처리가 행해지지 않는 것을 특징으로 하는 반도체 발광 소자용 반사성 정극.
- III족 질화물 반도체로 이루어진, n형 반도체층, 발광층 및 p형 반도체층이 기판상에 이 순서대로 형성되어 있고; 상기 n형 반도체층상에 형성된 부극; 및 상기 p형 반도체층상에 형성된 정극을 포함하는 질화 갈륨계 화합물 반도체 발광 소자에 있어서,상기 정극은 제 1항에 기재된 정극인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자.
- 제 19항에 있어서, 상기 정극측의 p형 반도체층의 표면상에 정극 금속 함유층이 존재하는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자.
- 제 19항에 기재된 질화 갈륨계 화합물 반도체 발광 소자를 포함하는 것을 특징으로 하는 램프.
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US (2) | US20080283850A1 (ko) |
EP (1) | EP1761960A4 (ko) |
KR (1) | KR100838215B1 (ko) |
CN (1) | CN100550441C (ko) |
TW (1) | TWI319915B (ko) |
WO (1) | WO2006001462A1 (ko) |
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TWI374552B (en) * | 2004-07-27 | 2012-10-11 | Cree Inc | Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming |
US7557380B2 (en) | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
JP4963807B2 (ja) | 2005-08-04 | 2012-06-27 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP2007157853A (ja) * | 2005-12-01 | 2007-06-21 | Sony Corp | 半導体発光素子およびその製造方法 |
GB2453464B (en) | 2006-05-23 | 2011-08-31 | Univ Meijo | Light-emitting semiconductor device |
US20090173956A1 (en) * | 2007-12-14 | 2009-07-09 | Philips Lumileds Lighting Company, Llc | Contact for a semiconductor light emitting device |
JP4702442B2 (ja) * | 2008-12-12 | 2011-06-15 | ソニー株式会社 | 半導体発光素子及びその製造方法 |
JP5258707B2 (ja) * | 2009-08-26 | 2013-08-07 | 株式会社東芝 | 半導体発光素子 |
US9450152B2 (en) | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
JP5734935B2 (ja) | 2012-09-20 | 2015-06-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
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EP1450415A3 (en) * | 1993-04-28 | 2005-05-04 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device |
JP3586293B2 (ja) * | 1994-07-11 | 2004-11-10 | ソニー株式会社 | 半導体発光素子 |
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TW314600B (ko) * | 1995-05-31 | 1997-09-01 | Mitsui Toatsu Chemicals | |
JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
JP3365607B2 (ja) * | 1997-04-25 | 2003-01-14 | シャープ株式会社 | GaN系化合物半導体装置及びその製造方法 |
JPH11220171A (ja) * | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子 |
US6992334B1 (en) * | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
JP5283293B2 (ja) * | 2001-02-21 | 2013-09-04 | ソニー株式会社 | 半導体発光素子 |
KR100519753B1 (ko) * | 2002-11-15 | 2005-10-07 | 삼성전기주식회사 | GaN계 화합물 반도체가 사용된 발광소자의 제조방법 |
JP4273928B2 (ja) * | 2003-10-30 | 2009-06-03 | 豊田合成株式会社 | Iii−v族窒化物半導体素子 |
WO2005081328A1 (en) * | 2004-02-24 | 2005-09-01 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device |
-
2005
- 2005-06-22 EP EP05755734A patent/EP1761960A4/en not_active Withdrawn
- 2005-06-22 WO PCT/JP2005/011870 patent/WO2006001462A1/en not_active Application Discontinuation
- 2005-06-22 CN CNB2005800207716A patent/CN100550441C/zh active Active
- 2005-06-22 KR KR1020067024019A patent/KR100838215B1/ko active IP Right Grant
- 2005-06-22 US US11/629,306 patent/US20080283850A1/en not_active Abandoned
- 2005-06-23 TW TW094120897A patent/TWI319915B/zh active
-
2009
- 2009-06-26 US US12/492,351 patent/US20090263922A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004063732A (ja) * | 2002-07-29 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 発光素子 |
Also Published As
Publication number | Publication date |
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WO2006001462A1 (en) | 2006-01-05 |
CN100550441C (zh) | 2009-10-14 |
CN1973379A (zh) | 2007-05-30 |
US20090263922A1 (en) | 2009-10-22 |
TWI319915B (en) | 2010-01-21 |
TW200605415A (en) | 2006-02-01 |
EP1761960A1 (en) | 2007-03-14 |
KR20070013302A (ko) | 2007-01-30 |
US20080283850A1 (en) | 2008-11-20 |
EP1761960A4 (en) | 2010-07-21 |
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