KR100837100B1 - 금속 이온 확산 차단층을 포함하는 집적회로 및 금속 이온 이동 억제방법 - Google Patents

금속 이온 확산 차단층을 포함하는 집적회로 및 금속 이온 이동 억제방법 Download PDF

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KR100837100B1
KR100837100B1 KR1020037008972A KR20037008972A KR100837100B1 KR 100837100 B1 KR100837100 B1 KR 100837100B1 KR 1020037008972 A KR1020037008972 A KR 1020037008972A KR 20037008972 A KR20037008972 A KR 20037008972A KR 100837100 B1 KR100837100 B1 KR 100837100B1
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film
metal
metal ion
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KR20030071797A (ko
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로보다마크
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다우 코닝 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020037008972A 2001-01-03 2002-01-03 금속 이온 확산 차단층을 포함하는 집적회로 및 금속 이온 이동 억제방법 Expired - Fee Related KR100837100B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25948901P 2001-01-03 2001-01-03
US60/259,489 2001-01-03
PCT/US2002/000130 WO2002054484A2 (en) 2001-01-03 2002-01-03 Metal ion diffusion barrier layers

Publications (2)

Publication Number Publication Date
KR20030071797A KR20030071797A (ko) 2003-09-06
KR100837100B1 true KR100837100B1 (ko) 2008-06-13

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KR1020037008972A Expired - Fee Related KR100837100B1 (ko) 2001-01-03 2002-01-03 금속 이온 확산 차단층을 포함하는 집적회로 및 금속 이온 이동 억제방법

Country Status (6)

Country Link
US (1) US20020137323A1 (https=)
JP (1) JP4242648B2 (https=)
KR (1) KR100837100B1 (https=)
CN (1) CN1524291A (https=)
TW (1) TWI272694B (https=)
WO (1) WO2002054484A2 (https=)

Families Citing this family (18)

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Publication number Priority date Publication date Assignee Title
JP4152619B2 (ja) * 2001-11-14 2008-09-17 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6917108B2 (en) * 2002-11-14 2005-07-12 International Business Machines Corporation Reliable low-k interconnect structure with hybrid dielectric
JP4142941B2 (ja) * 2002-12-06 2008-09-03 株式会社東芝 半導体装置の製造方法
US6875693B1 (en) * 2003-03-26 2005-04-05 Lsi Logic Corporation Via and metal line interface capable of reducing the incidence of electro-migration induced voids
US7081673B2 (en) * 2003-04-17 2006-07-25 International Business Machines Corporation Multilayered cap barrier in microelectronic interconnect structures
US6849561B1 (en) * 2003-08-18 2005-02-01 Asm Japan K.K. Method of forming low-k films
US7199046B2 (en) * 2003-11-14 2007-04-03 Tokyo Electron Ltd. Structure comprising tunable anti-reflective coating and method of forming thereof
US7622193B2 (en) 2004-08-18 2009-11-24 Dow Corning Corporation Coated substrates and methods for their preparation
EP1799883A2 (en) 2004-08-18 2007-06-27 Dow Corning Corporation Coated substrates and methods for their preparation
KR100967266B1 (ko) * 2008-05-26 2010-07-01 주식회사 삼안 태양광 추적장치 및 그 추적 방법
US8836127B2 (en) * 2009-11-19 2014-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect with flexible dielectric layer
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
US10163981B2 (en) * 2016-04-27 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Metal landing method for RRAM technology
EP3549620A1 (en) * 2018-04-04 2019-10-09 BIOTRONIK SE & Co. KG Coated implantable medical device and coating method
US11749563B2 (en) 2018-06-27 2023-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interlayer dielectric layer
US11152262B2 (en) * 2018-11-30 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate devices and processes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999041423A2 (en) * 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
EP0960958A2 (en) * 1998-05-29 1999-12-01 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999041423A2 (en) * 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
EP0960958A2 (en) * 1998-05-29 1999-12-01 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films

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Publication number Publication date
JP4242648B2 (ja) 2009-03-25
CN1524291A (zh) 2004-08-25
WO2002054484A3 (en) 2003-02-13
WO2002054484A2 (en) 2002-07-11
JP2004523889A (ja) 2004-08-05
US20020137323A1 (en) 2002-09-26
KR20030071797A (ko) 2003-09-06
TWI272694B (en) 2007-02-01

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