KR100819971B1 - 과전압 보호소자를 수반한 반도체 발광장치 - Google Patents

과전압 보호소자를 수반한 반도체 발광장치 Download PDF

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Publication number
KR100819971B1
KR100819971B1 KR1020070041812A KR20070041812A KR100819971B1 KR 100819971 B1 KR100819971 B1 KR 100819971B1 KR 1020070041812 A KR1020070041812 A KR 1020070041812A KR 20070041812 A KR20070041812 A KR 20070041812A KR 100819971 B1 KR100819971 B1 KR 100819971B1
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South Korea
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semiconductor
bonding pad
substrate
light emitting
main
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Korean (ko)
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KR20070111328A (ko
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노부히사 스기모리
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산켄덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05555—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H10W72/536—
    • H10W72/59—
    • H10W72/932—
    • H10W72/934—

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KR1020070041812A 2006-05-17 2007-04-30 과전압 보호소자를 수반한 반도체 발광장치 Active KR100819971B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006138303A JP5044986B2 (ja) 2006-05-17 2006-05-17 半導体発光装置
JPJP-P-2006-00138303 2006-05-17

Publications (2)

Publication Number Publication Date
KR20070111328A KR20070111328A (ko) 2007-11-21
KR100819971B1 true KR100819971B1 (ko) 2008-04-08

Family

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KR1020070041812A Active KR100819971B1 (ko) 2006-05-17 2007-04-30 과전압 보호소자를 수반한 반도체 발광장치

Country Status (4)

Country Link
US (1) US7576367B2 (enExample)
JP (1) JP5044986B2 (enExample)
KR (1) KR100819971B1 (enExample)
TW (1) TW200805715A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100902378B1 (ko) 2007-08-09 2009-06-11 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자

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JP5261923B2 (ja) * 2006-10-17 2013-08-14 サンケン電気株式会社 化合物半導体素子
KR20080089859A (ko) * 2007-04-02 2008-10-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP4545203B2 (ja) * 2008-03-18 2010-09-15 株式会社沖データ 光プリントヘッドおよび画像形成装置
JP5229034B2 (ja) 2008-03-28 2013-07-03 サンケン電気株式会社 発光装置
WO2009129353A1 (en) * 2008-04-15 2009-10-22 Purdue Research Foundation Metallized silicon substrate for indium gallium nitride light-emitting diode
DE102008034560B4 (de) * 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
TWI493748B (zh) * 2008-08-29 2015-07-21 日亞化學工業股份有限公司 Semiconductor light emitting elements and semiconductor light emitting devices
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
KR100986407B1 (ko) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
USD620897S1 (en) * 2009-10-29 2010-08-03 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD620460S1 (en) * 2009-10-30 2010-07-27 SemiLEDs, Optoelectronics Co., Ltd. Light emitting diode device
USD633876S1 (en) * 2009-10-30 2011-03-08 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD624510S1 (en) * 2009-10-30 2010-09-28 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD618637S1 (en) * 2009-10-30 2010-06-29 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
KR100974787B1 (ko) * 2010-02-04 2010-08-06 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101813934B1 (ko) * 2011-06-02 2018-01-30 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101276053B1 (ko) * 2011-07-22 2013-06-17 삼성전자주식회사 반도체 발광소자 및 발광장치
TWI478358B (zh) * 2011-08-04 2015-03-21 Univ Nat Central A method of integrated AC - type light - emitting diode module
US8809897B2 (en) * 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
JP2013135098A (ja) * 2011-12-27 2013-07-08 Sanken Electric Co Ltd 半導体発光装置
CN102810609B (zh) * 2012-08-16 2015-01-21 厦门市三安光电科技有限公司 一种紫外半导体发光器件及其制造方法
US9177992B2 (en) * 2013-01-09 2015-11-03 Nthdegree Technologies Worldwide Inc. Active LED module with LED and transistor formed on same substrate
CN103311261B (zh) * 2013-05-24 2016-02-17 安徽三安光电有限公司 集成led发光器件及其制作方法
JP6155911B2 (ja) * 2013-07-04 2017-07-05 三菱電機株式会社 半導体装置
KR102122358B1 (ko) * 2014-01-20 2020-06-15 삼성전자주식회사 반도체 발광 소자
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
RU2637260C2 (ru) * 2015-12-09 2017-12-01 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский технологический университет " Керамический материал для варисторов
DE102016112587A1 (de) 2016-07-08 2018-01-11 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102017002332B4 (de) * 2017-03-13 2019-11-07 Azur Space Solar Power Gmbh Leuchtdiode
JP7391326B2 (ja) * 2019-12-26 2023-12-05 株式会社ノベルクリスタルテクノロジー 半導体装置
TWD219684S (zh) * 2021-07-09 2022-07-01 晶元光電股份有限公司 發光二極體之部分
CN113451420A (zh) * 2021-07-23 2021-09-28 深圳市电科智能科技有限公司 中心对称GaN肖特基二极管
CN118693200B (zh) * 2024-06-28 2025-11-11 京东方华灿光电(浙江)有限公司 改善焊接可靠性的发光二极管及其制备方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100902378B1 (ko) 2007-08-09 2009-06-11 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자

Also Published As

Publication number Publication date
US7576367B2 (en) 2009-08-18
KR20070111328A (ko) 2007-11-21
TWI336146B (enExample) 2011-01-11
JP5044986B2 (ja) 2012-10-10
JP2007311506A (ja) 2007-11-29
US20070284606A1 (en) 2007-12-13
TW200805715A (en) 2008-01-16

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