KR100810928B1 - 메모리 셀들의 결함있는 열들을 수리하는 방법 및 장치 - Google Patents

메모리 셀들의 결함있는 열들을 수리하는 방법 및 장치 Download PDF

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Publication number
KR100810928B1
KR100810928B1 KR1020037003109A KR20037003109A KR100810928B1 KR 100810928 B1 KR100810928 B1 KR 100810928B1 KR 1020037003109 A KR1020037003109 A KR 1020037003109A KR 20037003109 A KR20037003109 A KR 20037003109A KR 100810928 B1 KR100810928 B1 KR 100810928B1
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KR
South Korea
Prior art keywords
column
circuit
coupled
digit lines
column node
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KR1020037003109A
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English (en)
Korean (ko)
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KR20040010521A (ko
Inventor
브라이언엠. 셜리
Original Assignee
마이크론 테크놀로지, 인크
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Application filed by 마이크론 테크놀로지, 인크 filed Critical 마이크론 테크놀로지, 인크
Priority claimed from PCT/US2000/019264 external-priority patent/WO2003085671A1/en
Publication of KR20040010521A publication Critical patent/KR20040010521A/ko
Application granted granted Critical
Publication of KR100810928B1 publication Critical patent/KR100810928B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
KR1020037003109A 2000-08-28 2000-08-28 메모리 셀들의 결함있는 열들을 수리하는 방법 및 장치 KR100810928B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/019264 WO2003085671A1 (en) 1999-07-15 2000-08-28 Method and apparatus for repairing defective columns of memory cells

Publications (2)

Publication Number Publication Date
KR20040010521A KR20040010521A (ko) 2004-01-31
KR100810928B1 true KR100810928B1 (ko) 2008-03-10

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Application Number Title Priority Date Filing Date
KR1020037003109A KR100810928B1 (ko) 2000-08-28 2000-08-28 메모리 셀들의 결함있는 열들을 수리하는 방법 및 장치

Country Status (3)

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JP (1) JP2005520277A (ja)
KR (1) KR100810928B1 (ja)
AU (1) AU2001243001A1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724282A (en) 1996-09-06 1998-03-03 Micron Technology, Inc. System and method for an antifuse bank

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3131234B2 (ja) * 1991-01-14 2001-01-31 株式会社日立製作所 半導体装置
JP3238429B2 (ja) * 1991-08-20 2001-12-17 沖電気工業株式会社 半導体記憶装置
JPH05128844A (ja) * 1991-11-01 1993-05-25 Mitsubishi Electric Corp 半導体記憶装置
JPH08227597A (ja) * 1995-02-21 1996-09-03 Mitsubishi Electric Corp 半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724282A (en) 1996-09-06 1998-03-03 Micron Technology, Inc. System and method for an antifuse bank

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Publication number Publication date
JP2005520277A (ja) 2005-07-07
AU2001243001A1 (en) 2003-10-20
KR20040010521A (ko) 2004-01-31

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