KR100792482B1 - 오염물을 차단하는 실드를 갖춘 경사진 스퍼터링 타겟 - Google Patents

오염물을 차단하는 실드를 갖춘 경사진 스퍼터링 타겟 Download PDF

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Publication number
KR100792482B1
KR100792482B1 KR1020000063705A KR20000063705A KR100792482B1 KR 100792482 B1 KR100792482 B1 KR 100792482B1 KR 1020000063705 A KR1020000063705 A KR 1020000063705A KR 20000063705 A KR20000063705 A KR 20000063705A KR 100792482 B1 KR100792482 B1 KR 100792482B1
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South Korea
Prior art keywords
sputtering target
magnets
workpiece
sputtering
target
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Expired - Fee Related
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KR1020000063705A
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English (en)
Korean (ko)
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KR20010051306A (ko
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아키히로 호소카와
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에이케이티 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020000063705A 1999-10-28 2000-10-28 오염물을 차단하는 실드를 갖춘 경사진 스퍼터링 타겟 Expired - Fee Related KR100792482B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9/429,762 1999-10-28
US09/429,762 US6267851B1 (en) 1999-10-28 1999-10-28 Tilted sputtering target with shield to block contaminants
US09/429,762 1999-10-28

Publications (2)

Publication Number Publication Date
KR20010051306A KR20010051306A (ko) 2001-06-25
KR100792482B1 true KR100792482B1 (ko) 2008-01-10

Family

ID=23704649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000063705A Expired - Fee Related KR100792482B1 (ko) 1999-10-28 2000-10-28 오염물을 차단하는 실드를 갖춘 경사진 스퍼터링 타겟

Country Status (6)

Country Link
US (1) US6267851B1 (enExample)
EP (1) EP1096545A3 (enExample)
JP (1) JP2001192805A (enExample)
KR (1) KR100792482B1 (enExample)
SG (1) SG85732A1 (enExample)
TW (1) TW479278B (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020046945A1 (en) * 1999-10-28 2002-04-25 Applied Materials, Inc. High performance magnetron for DC sputtering systems
DE10145050C1 (de) * 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron- Zerstäuben
US6878240B2 (en) * 2002-06-28 2005-04-12 International Business Machines Corporation Apparatus and method for obtaining symmetrical junctions between a read sensor and hard bias layers
US20060096851A1 (en) * 2004-11-08 2006-05-11 Ilya Lavitsky Physical vapor deposition chamber having an adjustable target
US20060096857A1 (en) * 2004-11-08 2006-05-11 Ilya Lavitsky Physical vapor deposition chamber having a rotatable substrate pedestal
US7316763B2 (en) * 2005-05-24 2008-01-08 Applied Materials, Inc. Multiple target tiles with complementary beveled edges forming a slanted gap therebetween
US20060266639A1 (en) * 2005-05-24 2006-11-30 Applied Materials, Inc. Sputtering target tiles having structured edges separated by a gap
US7644745B2 (en) * 2005-06-06 2010-01-12 Applied Materials, Inc. Bonding of target tiles to backing plate with patterned bonding agent
US20090090617A1 (en) * 2005-07-14 2009-04-09 Giauque Pierre H Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films
WO2007010798A1 (ja) * 2005-07-19 2007-01-25 Ulvac, Inc. スパッタリング装置、透明導電膜の製造方法
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20080006523A1 (en) 2006-06-26 2008-01-10 Akihiro Hosokawa Cooled pvd shield
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20100018855A1 (en) * 2008-07-24 2010-01-28 Seagate Technology Llc Inline co-sputter apparatus
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US20100181187A1 (en) * 2009-01-16 2010-07-22 Applied Materials, Inc. Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating
US8734896B2 (en) 2011-09-29 2014-05-27 H.C. Starck Inc. Methods of manufacturing high-strength large-area sputtering targets
JP5882934B2 (ja) 2012-05-09 2016-03-09 シーゲイト テクノロジー エルエルシー スパッタリング装置
JP2015067856A (ja) * 2013-09-27 2015-04-13 シーゲイト テクノロジー エルエルシー マグネトロンスパッタ装置
JP2015110814A (ja) * 2013-12-06 2015-06-18 信越化学工業株式会社 スパッタ成膜方法、スパッタ装置、フォトマスクブランクの製造方法及びフォトマスクブランク
CN104810228B (zh) * 2014-01-23 2017-10-13 北京北方华创微电子装备有限公司 螺旋形磁控管及磁控溅射设备
KR20180121798A (ko) * 2016-03-30 2018-11-08 케이힌 람테크 가부시키가이샤 스퍼터링 캐소드, 스퍼터링 장치 및 성막체의 제조 방법
JP6832130B2 (ja) 2016-11-04 2021-02-24 東京エレクトロン株式会社 成膜装置
US10580627B2 (en) * 2018-04-26 2020-03-03 Keihin Ramtech Co., Ltd. Sputtering cathode, sputtering cathode assembly, and sputtering apparatus
JP7097777B2 (ja) 2018-08-10 2022-07-08 東京エレクトロン株式会社 成膜装置および成膜方法
JP2020026575A (ja) * 2018-08-10 2020-02-20 東京エレクトロン株式会社 成膜装置、成膜システム、および成膜方法
US11664207B2 (en) 2018-08-10 2023-05-30 Tokyo Electron Limited Film-forming apparatus, film-forming system, and film-forming method
JP7584735B2 (ja) * 2020-03-13 2024-11-18 日新電機株式会社 スパッタリング装置
CN112853302B (zh) * 2020-12-31 2023-08-25 广东欣丰科技有限公司 一种磁控溅射卷绕设备的镀膜室装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220912A (ja) * 1983-05-31 1984-12-12 Fujitsu Ltd スパツタリング装置
EP0230652A1 (en) * 1985-12-30 1987-08-05 International Business Machines Corporation Apparatus for creating a vacuum deposited alloy or composition and application of such an apparatus
JPH03219067A (ja) * 1989-02-15 1991-09-26 Fuji Photo Film Co Ltd スパッタリング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472259A (en) * 1981-10-29 1984-09-18 Materials Research Corporation Focusing magnetron sputtering apparatus
JPS59229480A (ja) * 1983-06-10 1984-12-22 Nippon Telegr & Teleph Corp <Ntt> スパツタリング装置
EP0173164B1 (en) * 1984-08-31 1988-11-09 Hitachi, Ltd. Microwave assisting sputtering
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
GB9006073D0 (en) * 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
JPH0645280A (ja) * 1992-07-24 1994-02-18 Fujitsu Ltd 半導体製造装置
US5855744A (en) * 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
JP2931973B1 (ja) * 1998-02-25 1999-08-09 工業技術院長 一硫化サマリウムピエゾクロミック薄膜の製法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220912A (ja) * 1983-05-31 1984-12-12 Fujitsu Ltd スパツタリング装置
EP0230652A1 (en) * 1985-12-30 1987-08-05 International Business Machines Corporation Apparatus for creating a vacuum deposited alloy or composition and application of such an apparatus
JPH03219067A (ja) * 1989-02-15 1991-09-26 Fuji Photo Film Co Ltd スパッタリング方法

Also Published As

Publication number Publication date
EP1096545A2 (en) 2001-05-02
SG85732A1 (en) 2002-01-15
JP2001192805A (ja) 2001-07-17
KR20010051306A (ko) 2001-06-25
TW479278B (en) 2002-03-11
US6267851B1 (en) 2001-07-31
EP1096545A3 (en) 2006-03-01

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