KR100792216B1 - 얼룩결함 검사방법 및 장치 - Google Patents

얼룩결함 검사방법 및 장치 Download PDF

Info

Publication number
KR100792216B1
KR100792216B1 KR1020050044163A KR20050044163A KR100792216B1 KR 100792216 B1 KR100792216 B1 KR 100792216B1 KR 1020050044163 A KR1020050044163 A KR 1020050044163A KR 20050044163 A KR20050044163 A KR 20050044163A KR 100792216 B1 KR100792216 B1 KR 100792216B1
Authority
KR
South Korea
Prior art keywords
defect
defects
repeating pattern
pattern
pseudo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050044163A
Other languages
English (en)
Korean (ko)
Other versions
KR20060048093A (ko
Inventor
테루아키 요시다
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20060048093A publication Critical patent/KR20060048093A/ko
Application granted granted Critical
Publication of KR100792216B1 publication Critical patent/KR100792216B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • G06T7/001Industrial image inspection using an image reference approach
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020050044163A 2004-05-28 2005-05-25 얼룩결함 검사방법 및 장치 Expired - Fee Related KR100792216B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004159792A JP4480002B2 (ja) 2004-05-28 2004-05-28 ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法
JPJP-P-2004-00159792 2004-05-28

Publications (2)

Publication Number Publication Date
KR20060048093A KR20060048093A (ko) 2006-05-18
KR100792216B1 true KR100792216B1 (ko) 2008-01-07

Family

ID=35448975

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050044163A Expired - Fee Related KR100792216B1 (ko) 2004-05-28 2005-05-25 얼룩결함 검사방법 및 장치

Country Status (5)

Country Link
US (1) US7443498B2 (enExample)
JP (1) JP4480002B2 (enExample)
KR (1) KR100792216B1 (enExample)
CN (1) CN1721987B (enExample)
TW (1) TWI262292B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583155B2 (ja) * 2004-12-13 2010-11-17 Hoya株式会社 欠陥検査方法及びシステム、並びにフォトマスクの製造方法
CN100565630C (zh) * 2006-01-04 2009-12-02 台湾薄膜电晶体液晶显示器产业协会 显示器多角度测量系统与方法
SG169372A1 (en) * 2006-02-01 2011-03-30 Applied Materials Israel Ltd Il Method and system for evaluating a variation in a parameter of a pattern
JP4839127B2 (ja) * 2006-05-10 2011-12-21 株式会社日立ハイテクノロジーズ 校正用標準部材及びこれを用いた校正方法および電子ビーム装置
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Hoya株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
KR101587176B1 (ko) * 2007-04-18 2016-01-20 마이크로닉 마이데이타 에이비 무라 검출 및 계측을 위한 방법 및 장치
WO2009063295A1 (en) * 2007-11-12 2009-05-22 Micronic Laser Systems Ab Methods and apparatuses for detecting pattern errors
US20090199152A1 (en) * 2008-02-06 2009-08-06 Micronic Laser Systems Ab Methods and apparatuses for reducing mura effects in generated patterns
JP5428410B2 (ja) * 2009-03-11 2014-02-26 凸版印刷株式会社 フォトマスクおよび描画精度評価方法
JP5556071B2 (ja) * 2009-07-09 2014-07-23 凸版印刷株式会社 評価用パターンを形成したフォトマスクおよびムラ検査装置の性能評価方法
JP2011075401A (ja) * 2009-09-30 2011-04-14 Hitachi High-Technologies Corp インライン基板検査装置の光学系校正方法及びインライン基板検査装置
JP5601095B2 (ja) * 2010-08-30 2014-10-08 凸版印刷株式会社 検査条件の調整用パターン、およびそれを用いた検査条件の調整方法
CN102033073A (zh) * 2010-12-08 2011-04-27 北大方正集团有限公司 确定自动光学检测设备性能的方法及标准片
JP4902806B2 (ja) * 2011-07-22 2012-03-21 株式会社日立ハイテクノロジーズ 校正用標準部材
JP5882131B2 (ja) * 2012-05-11 2016-03-09 滲透工業株式会社 円筒状ピン検査装置
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
EP2972589B1 (en) 2013-03-12 2017-05-03 Micronic Mydata AB Mechanically produced alignment fiducial method and alignment system
TWI588815B (zh) * 2015-06-01 2017-06-21 仁寶電腦工業股份有限公司 顯示參數調整方法及使用此方法的電子裝置
CN104914133B (zh) * 2015-06-19 2017-12-22 合肥京东方光电科技有限公司 摩擦缺陷检测装置
CN105549240B (zh) * 2016-03-11 2018-09-21 京东方科技集团股份有限公司 液晶显示器件的水波纹等级的测量方法和装置
CN107219720B (zh) * 2017-05-27 2020-12-29 厦门天马微电子有限公司 一种掩膜板、曝光装置以及膜层图案化的制作方法
US10681344B2 (en) * 2017-12-15 2020-06-09 Samsung Display Co., Ltd. System and method for mura detection on a display
US10643576B2 (en) 2017-12-15 2020-05-05 Samsung Display Co., Ltd. System and method for white spot Mura detection with improved preprocessing
CN110197797B (zh) * 2018-02-27 2021-07-02 上海微电子装备(集团)股份有限公司 一种缺陷检测用标准片
US10557802B2 (en) * 2018-05-09 2020-02-11 Kla-Tencor Corporation Capture of repeater defects on a semiconductor wafer
CN109375404B (zh) * 2018-11-22 2020-06-30 深圳市华星光电半导体显示技术有限公司 用于马赛克拼接的快速补值方法
CN112345549B (zh) * 2019-08-07 2025-07-11 金宝电子印第安纳公司 用于表面检查的成像系统
CN111038114B (zh) * 2019-11-13 2021-03-16 深圳市华星光电半导体显示技术有限公司 喷墨打印装置及其制备有机发光二极体显示面板的方法
CN116403927A (zh) * 2023-03-24 2023-07-07 武汉大学 一种深孔刻蚀缺陷形貌的表征方法及系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274713A (en) * 1991-09-23 1993-12-28 Industrial Technology Research Institute Real-time apparatus for detecting surface defects on objects
US5365596A (en) * 1992-12-17 1994-11-15 Philip Morris Incorporated Methods and apparatus for automatic image inspection of continuously moving objects
US5917935A (en) * 1995-06-13 1999-06-29 Photon Dynamics, Inc. Mura detection apparatus and method
US5917934A (en) * 1996-03-15 1999-06-29 Sony Corporation Automated visual inspection apparatus for detecting defects and for measuring defect size
US6154561A (en) * 1997-04-07 2000-11-28 Photon Dynamics, Inc. Method and apparatus for detecting Mura defects
JPH10300447A (ja) 1997-04-23 1998-11-13 K L Ee Akurotetsuku:Kk 表面パターンむら検出方法及び装置
US6922482B1 (en) * 1999-06-15 2005-07-26 Applied Materials, Inc. Hybrid invariant adaptive automatic defect classification
WO2001041068A1 (fr) 1999-11-29 2001-06-07 Olympus Optical Co., Ltd. Systeme de detection de defaut
JP3468755B2 (ja) * 2001-03-05 2003-11-17 石川島播磨重工業株式会社 液晶駆動基板の検査装置
US7308157B2 (en) * 2003-02-03 2007-12-11 Photon Dynamics, Inc. Method and apparatus for optical inspection of a display

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
공개특허 제2000-16419호(2000.03.25)
공개특허 제2001-101697호(2001.11.14)

Also Published As

Publication number Publication date
US7443498B2 (en) 2008-10-28
US20050271262A1 (en) 2005-12-08
KR20060048093A (ko) 2006-05-18
JP2005338621A (ja) 2005-12-08
TWI262292B (en) 2006-09-21
CN1721987A (zh) 2006-01-18
JP4480002B2 (ja) 2010-06-16
TW200612076A (en) 2006-04-16
CN1721987B (zh) 2010-05-05

Similar Documents

Publication Publication Date Title
KR100677692B1 (ko) 얼룩결함 검사 마스크, 그리고 얼룩결함 검사장치 및 방법
KR20060048093A (ko) 얼룩결함 검사방법 및 장치
KR101362916B1 (ko) 패턴 결함 검사방법, 포토마스크의 제조 방법 및 표시디바이스 기판의 제조 방법
KR101070558B1 (ko) 포토마스크의 검사 방법, 포토마스크의 제조 방법, 전자부품의 제조 방법, 테스트 마스크 및 테스트 마스크 세트
CN106165078B (zh) Δ裸片及δ数据库检验
US20030138138A1 (en) System and method for determining reticle defect printability
TWI572975B (zh) 用於檢驗一光微影標線之方法、檢驗系統及電腦可讀媒體
KR20060063732A (ko) 얼룩 결함 검사 장치 및 방법과 포토마스크의 제조 방법
JP4583155B2 (ja) 欠陥検査方法及びシステム、並びにフォトマスクの製造方法
KR101320183B1 (ko) 패턴 결함 검사 방법, 패턴 결함 검사 장치, 포토마스크의 제조 방법, 및 표시 디바이스용 기판의 제조 방법
JP2005291874A (ja) パターンのムラ欠陥検査方法及び装置
CN100573042C (zh) 图形的不匀缺陷检查方法和装置
JP2007271425A (ja) パターン欠陥検査装置、パターン欠陥検査方法、及びフォトマスクの製造方法
KR101232209B1 (ko) 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법
US7573568B2 (en) Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process
JP2009156687A (ja) フォトマスクの欠陥検査装置、フォトマスクの欠陥検査方法及びフォトマスクの製造方法
US7387965B2 (en) Reference pattern for creating a defect recognition level, method of fabricating the same and method of inspecting defects using the same
JP2008070279A (ja) ムラ検査装置、膜形成システムおよびムラ検査方法
JP2012047669A (ja) 検査条件の調整用パターン、およびそれを用いた検査条件の調整方法
JP2009156618A (ja) フォトマスクの欠陥検査装置、フォトマスクの欠陥検査方法及びフォトマスクの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080411

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1007922160000

Gazette reference publication date: 20080107

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20121130

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20131218

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20141205

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160101

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160101

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000