JP4480002B2 - ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法 - Google Patents

ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法 Download PDF

Info

Publication number
JP4480002B2
JP4480002B2 JP2004159792A JP2004159792A JP4480002B2 JP 4480002 B2 JP4480002 B2 JP 4480002B2 JP 2004159792 A JP2004159792 A JP 2004159792A JP 2004159792 A JP2004159792 A JP 2004159792A JP 4480002 B2 JP4480002 B2 JP 4480002B2
Authority
JP
Japan
Prior art keywords
defect
mura defect
mura
pattern
unevenness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004159792A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005338621A (ja
JP2005338621A5 (enExample
Inventor
輝昭 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2004159792A priority Critical patent/JP4480002B2/ja
Priority to KR1020050044163A priority patent/KR100792216B1/ko
Priority to US11/138,765 priority patent/US7443498B2/en
Priority to TW094117430A priority patent/TWI262292B/zh
Priority to CN2005100758091A priority patent/CN1721987B/zh
Publication of JP2005338621A publication Critical patent/JP2005338621A/ja
Publication of JP2005338621A5 publication Critical patent/JP2005338621A5/ja
Application granted granted Critical
Publication of JP4480002B2 publication Critical patent/JP4480002B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • G06T7/001Industrial image inspection using an image reference approach
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2004159792A 2004-05-28 2004-05-28 ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法 Expired - Fee Related JP4480002B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004159792A JP4480002B2 (ja) 2004-05-28 2004-05-28 ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法
KR1020050044163A KR100792216B1 (ko) 2004-05-28 2005-05-25 얼룩결함 검사방법 및 장치
US11/138,765 US7443498B2 (en) 2004-05-28 2005-05-27 Method and apparatus for inspecting a mura defect, and method of manufacturing a photomask
TW094117430A TWI262292B (en) 2004-05-28 2005-05-27 Method and apparatus for inspecting a mura defect, and method of manufacturing a photomask
CN2005100758091A CN1721987B (zh) 2004-05-28 2005-05-30 波纹缺陷检查方法及装置、以及光掩模的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004159792A JP4480002B2 (ja) 2004-05-28 2004-05-28 ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法

Publications (3)

Publication Number Publication Date
JP2005338621A JP2005338621A (ja) 2005-12-08
JP2005338621A5 JP2005338621A5 (enExample) 2007-11-08
JP4480002B2 true JP4480002B2 (ja) 2010-06-16

Family

ID=35448975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004159792A Expired - Fee Related JP4480002B2 (ja) 2004-05-28 2004-05-28 ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法

Country Status (5)

Country Link
US (1) US7443498B2 (enExample)
JP (1) JP4480002B2 (enExample)
KR (1) KR100792216B1 (enExample)
CN (1) CN1721987B (enExample)
TW (1) TWI262292B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583155B2 (ja) * 2004-12-13 2010-11-17 Hoya株式会社 欠陥検査方法及びシステム、並びにフォトマスクの製造方法
CN100565630C (zh) * 2006-01-04 2009-12-02 台湾薄膜电晶体液晶显示器产业协会 显示器多角度测量系统与方法
SG169372A1 (en) * 2006-02-01 2011-03-30 Applied Materials Israel Ltd Il Method and system for evaluating a variation in a parameter of a pattern
JP4839127B2 (ja) * 2006-05-10 2011-12-21 株式会社日立ハイテクノロジーズ 校正用標準部材及びこれを用いた校正方法および電子ビーム装置
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Hoya株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
KR101587176B1 (ko) * 2007-04-18 2016-01-20 마이크로닉 마이데이타 에이비 무라 검출 및 계측을 위한 방법 및 장치
WO2009063295A1 (en) * 2007-11-12 2009-05-22 Micronic Laser Systems Ab Methods and apparatuses for detecting pattern errors
US20090199152A1 (en) * 2008-02-06 2009-08-06 Micronic Laser Systems Ab Methods and apparatuses for reducing mura effects in generated patterns
JP5428410B2 (ja) * 2009-03-11 2014-02-26 凸版印刷株式会社 フォトマスクおよび描画精度評価方法
JP5556071B2 (ja) * 2009-07-09 2014-07-23 凸版印刷株式会社 評価用パターンを形成したフォトマスクおよびムラ検査装置の性能評価方法
JP2011075401A (ja) * 2009-09-30 2011-04-14 Hitachi High-Technologies Corp インライン基板検査装置の光学系校正方法及びインライン基板検査装置
JP5601095B2 (ja) * 2010-08-30 2014-10-08 凸版印刷株式会社 検査条件の調整用パターン、およびそれを用いた検査条件の調整方法
CN102033073A (zh) * 2010-12-08 2011-04-27 北大方正集团有限公司 确定自动光学检测设备性能的方法及标准片
JP4902806B2 (ja) * 2011-07-22 2012-03-21 株式会社日立ハイテクノロジーズ 校正用標準部材
JP5882131B2 (ja) * 2012-05-11 2016-03-09 滲透工業株式会社 円筒状ピン検査装置
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
EP2972589B1 (en) 2013-03-12 2017-05-03 Micronic Mydata AB Mechanically produced alignment fiducial method and alignment system
TWI588815B (zh) * 2015-06-01 2017-06-21 仁寶電腦工業股份有限公司 顯示參數調整方法及使用此方法的電子裝置
CN104914133B (zh) * 2015-06-19 2017-12-22 合肥京东方光电科技有限公司 摩擦缺陷检测装置
CN105549240B (zh) * 2016-03-11 2018-09-21 京东方科技集团股份有限公司 液晶显示器件的水波纹等级的测量方法和装置
CN107219720B (zh) * 2017-05-27 2020-12-29 厦门天马微电子有限公司 一种掩膜板、曝光装置以及膜层图案化的制作方法
US10681344B2 (en) * 2017-12-15 2020-06-09 Samsung Display Co., Ltd. System and method for mura detection on a display
US10643576B2 (en) 2017-12-15 2020-05-05 Samsung Display Co., Ltd. System and method for white spot Mura detection with improved preprocessing
CN110197797B (zh) * 2018-02-27 2021-07-02 上海微电子装备(集团)股份有限公司 一种缺陷检测用标准片
US10557802B2 (en) * 2018-05-09 2020-02-11 Kla-Tencor Corporation Capture of repeater defects on a semiconductor wafer
CN109375404B (zh) * 2018-11-22 2020-06-30 深圳市华星光电半导体显示技术有限公司 用于马赛克拼接的快速补值方法
CN112345549B (zh) * 2019-08-07 2025-07-11 金宝电子印第安纳公司 用于表面检查的成像系统
CN111038114B (zh) * 2019-11-13 2021-03-16 深圳市华星光电半导体显示技术有限公司 喷墨打印装置及其制备有机发光二极体显示面板的方法
CN116403927A (zh) * 2023-03-24 2023-07-07 武汉大学 一种深孔刻蚀缺陷形貌的表征方法及系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274713A (en) * 1991-09-23 1993-12-28 Industrial Technology Research Institute Real-time apparatus for detecting surface defects on objects
US5365596A (en) * 1992-12-17 1994-11-15 Philip Morris Incorporated Methods and apparatus for automatic image inspection of continuously moving objects
US5917935A (en) * 1995-06-13 1999-06-29 Photon Dynamics, Inc. Mura detection apparatus and method
US5917934A (en) * 1996-03-15 1999-06-29 Sony Corporation Automated visual inspection apparatus for detecting defects and for measuring defect size
US6154561A (en) * 1997-04-07 2000-11-28 Photon Dynamics, Inc. Method and apparatus for detecting Mura defects
JPH10300447A (ja) 1997-04-23 1998-11-13 K L Ee Akurotetsuku:Kk 表面パターンむら検出方法及び装置
US6922482B1 (en) * 1999-06-15 2005-07-26 Applied Materials, Inc. Hybrid invariant adaptive automatic defect classification
WO2001041068A1 (fr) 1999-11-29 2001-06-07 Olympus Optical Co., Ltd. Systeme de detection de defaut
JP3468755B2 (ja) * 2001-03-05 2003-11-17 石川島播磨重工業株式会社 液晶駆動基板の検査装置
US7308157B2 (en) * 2003-02-03 2007-12-11 Photon Dynamics, Inc. Method and apparatus for optical inspection of a display

Also Published As

Publication number Publication date
US7443498B2 (en) 2008-10-28
US20050271262A1 (en) 2005-12-08
KR20060048093A (ko) 2006-05-18
JP2005338621A (ja) 2005-12-08
KR100792216B1 (ko) 2008-01-07
TWI262292B (en) 2006-09-21
CN1721987A (zh) 2006-01-18
TW200612076A (en) 2006-04-16
CN1721987B (zh) 2010-05-05

Similar Documents

Publication Publication Date Title
JP4480001B2 (ja) ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP2005338621A (ja) ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法
US7599053B2 (en) Pattern defect inspection method, photomask manufacturing method, and display device substrate manufacturing method
JP4480009B2 (ja) 欠陥検査装置及び方法、並びにフォトマスクの製造方法
CN104303048B (zh) 使用反射及透射图来检测光罩劣化
CN106165078B (zh) Δ裸片及δ数据库检验
TWI572975B (zh) 用於檢驗一光微影標線之方法、檢驗系統及電腦可讀媒體
JP4583155B2 (ja) 欠陥検査方法及びシステム、並びにフォトマスクの製造方法
JP4949928B2 (ja) パターン欠陥検査方法、パターン欠陥検査装置、フォトマスク製品の製造方法、及び表示デバイス用基板の製造方法
JP4831607B2 (ja) パターン欠陥検査方法及びフォトマスクの製造方法
JP2009048186A (ja) フォトマスクの製造方法、パターン転写方法、フォトマスク及びデータベース
JP2005291874A (ja) パターンのムラ欠陥検査方法及び装置
CN100573042C (zh) 图形的不匀缺陷检查方法和装置
JP2012058029A (ja) 周期性パターン検査装置
JP2009156687A (ja) フォトマスクの欠陥検査装置、フォトマスクの欠陥検査方法及びフォトマスクの製造方法
JP5428410B2 (ja) フォトマスクおよび描画精度評価方法
JP2009156618A (ja) フォトマスクの欠陥検査装置、フォトマスクの欠陥検査方法及びフォトマスクの製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070425

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070926

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100311

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100311

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130326

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130326

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140326

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees