KR100775942B1 - D급 출력단 증폭기 복수개가 캐스캐이드로 연결되는증폭장치 - Google Patents
D급 출력단 증폭기 복수개가 캐스캐이드로 연결되는증폭장치 Download PDFInfo
- Publication number
- KR100775942B1 KR100775942B1 KR1020060093560A KR20060093560A KR100775942B1 KR 100775942 B1 KR100775942 B1 KR 100775942B1 KR 1020060093560 A KR1020060093560 A KR 1020060093560A KR 20060093560 A KR20060093560 A KR 20060093560A KR 100775942 B1 KR100775942 B1 KR 100775942B1
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- South Korea
- Prior art keywords
- class
- output stage
- amplifier
- output
- stage amplifier
- Prior art date
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- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/21—Bias resistors are added at the input of an amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (3)
- 입력과 출력이 저항을 매개로 연결되는 D급 출력단 증폭기 복수개가 커패시터를 매개로 하여 캐스캐이드로 연결되는 것을 특징으로 하는 증폭장치.
- 제1항에 있어서, 상기 D급 출력단 증폭기가 NMOS와 PMOS를 포함하여 이루어지는 것을 특징으로 하는 증폭장치.
- 제1항에 있어서, 상기 D급 출력단 증폭기가 NPN형 BJT와 PNP형 BJT를 포함하여 이루어지는 것을 특징으로 하는 증폭장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060093560A KR100775942B1 (ko) | 2006-09-26 | 2006-09-26 | D급 출력단 증폭기 복수개가 캐스캐이드로 연결되는증폭장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060093560A KR100775942B1 (ko) | 2006-09-26 | 2006-09-26 | D급 출력단 증폭기 복수개가 캐스캐이드로 연결되는증폭장치 |
Publications (1)
Publication Number | Publication Date |
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KR100775942B1 true KR100775942B1 (ko) | 2007-11-15 |
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Family Applications (1)
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KR1020060093560A KR100775942B1 (ko) | 2006-09-26 | 2006-09-26 | D급 출력단 증폭기 복수개가 캐스캐이드로 연결되는증폭장치 |
Country Status (1)
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KR (1) | KR100775942B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103441751A (zh) * | 2013-08-29 | 2013-12-11 | 数微(福建)通信技术有限公司 | 高速单刀双掷电子开关电路 |
US9503036B2 (en) | 2012-07-27 | 2016-11-22 | Soongsil University Research Consortium Techno-Park | Power amplifier having stack structure |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02200006A (ja) * | 1989-01-30 | 1990-08-08 | Nec Corp | 半導体集積回路の遅延回路 |
JPH0491518A (ja) * | 1990-08-07 | 1992-03-25 | Nec Corp | Cmosインバータ回路 |
KR0162929B1 (ko) * | 1993-08-03 | 1999-03-20 | 세끼모또 다다히로 | 디지탈 신호 처리용 지연 회로 |
KR19990029504A (ko) * | 1997-09-03 | 1999-04-26 | 아베 아키라 | 시프트레지스터장치 및 표시장치 |
JPH11177398A (ja) | 1997-11-01 | 1999-07-02 | Lg Semicon Co Ltd | 遅延回路 |
-
2006
- 2006-09-26 KR KR1020060093560A patent/KR100775942B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02200006A (ja) * | 1989-01-30 | 1990-08-08 | Nec Corp | 半導体集積回路の遅延回路 |
JPH0491518A (ja) * | 1990-08-07 | 1992-03-25 | Nec Corp | Cmosインバータ回路 |
KR0162929B1 (ko) * | 1993-08-03 | 1999-03-20 | 세끼모또 다다히로 | 디지탈 신호 처리용 지연 회로 |
KR19990029504A (ko) * | 1997-09-03 | 1999-04-26 | 아베 아키라 | 시프트레지스터장치 및 표시장치 |
JPH11177398A (ja) | 1997-11-01 | 1999-07-02 | Lg Semicon Co Ltd | 遅延回路 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9503036B2 (en) | 2012-07-27 | 2016-11-22 | Soongsil University Research Consortium Techno-Park | Power amplifier having stack structure |
US9680427B2 (en) | 2012-07-27 | 2017-06-13 | Soongsil University Research Consortium Techno-Park | Power amplifier having stack structure |
CN103441751A (zh) * | 2013-08-29 | 2013-12-11 | 数微(福建)通信技术有限公司 | 高速单刀双掷电子开关电路 |
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