KR100774276B1 - 부식 방지제로서 탄닌산을 함유하는 조성물 - Google Patents

부식 방지제로서 탄닌산을 함유하는 조성물 Download PDF

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Publication number
KR100774276B1
KR100774276B1 KR1020050113222A KR20050113222A KR100774276B1 KR 100774276 B1 KR100774276 B1 KR 100774276B1 KR 1020050113222 A KR1020050113222 A KR 1020050113222A KR 20050113222 A KR20050113222 A KR 20050113222A KR 100774276 B1 KR100774276 B1 KR 100774276B1
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KR
South Korea
Prior art keywords
composition
substrate
group
tannic acid
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020050113222A
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English (en)
Korean (ko)
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KR20060060577A (ko
Inventor
데니스 게이츠 제닝스
제니퍼 엠 리커
Original Assignee
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
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Application filed by 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 filed Critical 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
Publication of KR20060060577A publication Critical patent/KR20060060577A/ko
Application granted granted Critical
Publication of KR100774276B1 publication Critical patent/KR100774276B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K15/00—Anti-oxidant compositions; Compositions inhibiting chemical change
    • C09K15/04—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds
    • C09K15/06—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing oxygen
    • C09K15/08—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing oxygen containing a phenol or quinone moiety
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • ing And Chemical Polishing (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
KR1020050113222A 2004-11-30 2005-11-25 부식 방지제로서 탄닌산을 함유하는 조성물 Expired - Fee Related KR100774276B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/000,147 US20060116313A1 (en) 2004-11-30 2004-11-30 Compositions comprising tannic acid as corrosion inhibitor
US11/000,147 2004-11-30

Publications (2)

Publication Number Publication Date
KR20060060577A KR20060060577A (ko) 2006-06-05
KR100774276B1 true KR100774276B1 (ko) 2007-11-08

Family

ID=36568074

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050113222A Expired - Fee Related KR100774276B1 (ko) 2004-11-30 2005-11-25 부식 방지제로서 탄닌산을 함유하는 조성물

Country Status (6)

Country Link
US (1) US20060116313A1 (https=)
JP (1) JP2006152303A (https=)
KR (1) KR100774276B1 (https=)
CN (1) CN1789400A (https=)
SG (1) SG122932A1 (https=)
TW (1) TWI296357B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
JP2010222552A (ja) * 2009-02-24 2010-10-07 Sumitomo Chemical Co Ltd 洗浄用組成物及びそれを用いる液晶性ポリエステル製造装置の洗浄方法
KR20110016418A (ko) * 2009-08-11 2011-02-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
CN103631101B (zh) * 2012-08-22 2018-01-09 得凯莫斯公司弗罗里达有限公司 包含含氟表面活性剂的光阻剥除剂
KR102092919B1 (ko) * 2014-03-21 2020-04-14 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
CN105152367A (zh) * 2015-10-10 2015-12-16 无棣华信石油技术服务有限公司 一种环保型油田回注水缓蚀阻垢剂及其制备方法
MX2023002963A (es) * 2020-09-16 2023-05-10 Adama Makhteshim Ltd Formulacion novedosa de fungicidas y bactericidas basados en cobre.
TWI812342B (zh) * 2021-11-22 2023-08-11 南韓商Ｌｇ化學股份有限公司 移除光阻之剝離劑組成物以及使用其之剝離光阻方法
CN119376200B (zh) * 2024-12-31 2025-10-28 芯越微电子材料(嘉兴)有限公司 一种能够保护GaAs和PI衬底的光刻胶剥离液及其应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001209191A (ja) 2000-01-25 2001-08-03 Nec Corp 剥離剤組成物および剥離方法

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
US3650957A (en) * 1970-07-24 1972-03-21 Shipley Co Etchant for cupreous metals
US3650959A (en) * 1970-07-24 1972-03-21 Shipley Co Etchant for cupreous metals
US3650958A (en) * 1970-07-24 1972-03-21 Shipley Co Etchant for cupreous metals
US4054466A (en) * 1975-09-10 1977-10-18 Oxy Metal Industries Corporation Tannin treatment of aluminum
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
US4806453A (en) * 1986-05-07 1989-02-21 Shipley Company Inc. Positive acting bilayer photoresist development
US5496491A (en) * 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
US5597420A (en) * 1995-01-17 1997-01-28 Ashland Inc. Stripping composition having monoethanolamine
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
DE69941088D1 (de) * 1998-05-18 2009-08-20 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
JP2002528903A (ja) * 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US8236485B2 (en) * 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
US20050097825A1 (en) * 2003-11-06 2005-05-12 Jinru Bian Compositions and methods for a barrier removal
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001209191A (ja) 2000-01-25 2001-08-03 Nec Corp 剥離剤組成物および剥離方法

Also Published As

Publication number Publication date
KR20060060577A (ko) 2006-06-05
US20060116313A1 (en) 2006-06-01
JP2006152303A (ja) 2006-06-15
SG122932A1 (en) 2006-06-29
TWI296357B (en) 2008-05-01
TW200619875A (en) 2006-06-16
CN1789400A (zh) 2006-06-21

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