KR100752492B1 - 노광방법 및 장치 - Google Patents

노광방법 및 장치 Download PDF

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Publication number
KR100752492B1
KR100752492B1 KR1020060019035A KR20060019035A KR100752492B1 KR 100752492 B1 KR100752492 B1 KR 100752492B1 KR 1020060019035 A KR1020060019035 A KR 1020060019035A KR 20060019035 A KR20060019035 A KR 20060019035A KR 100752492 B1 KR100752492 B1 KR 100752492B1
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KR
South Korea
Prior art keywords
contact hole
pattern
light
mask
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060019035A
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English (en)
Korean (ko)
Other versions
KR20060096896A (ko
Inventor
켄지 야마조에
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20060096896A publication Critical patent/KR20060096896A/ko
Application granted granted Critical
Publication of KR100752492B1 publication Critical patent/KR100752492B1/ko
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020060019035A 2005-03-01 2006-02-28 노광방법 및 장치 Expired - Fee Related KR100752492B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005056007A JP4612849B2 (ja) 2005-03-01 2005-03-01 露光方法、露光装置及びデバイス製造方法
JPJP-P-2005-00056007 2005-03-01

Publications (2)

Publication Number Publication Date
KR20060096896A KR20060096896A (ko) 2006-09-13
KR100752492B1 true KR100752492B1 (ko) 2007-08-27

Family

ID=36589082

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060019035A Expired - Fee Related KR100752492B1 (ko) 2005-03-01 2006-02-28 노광방법 및 장치

Country Status (6)

Country Link
US (1) US7359033B2 (enExample)
EP (1) EP1698940B1 (enExample)
JP (1) JP4612849B2 (enExample)
KR (1) KR100752492B1 (enExample)
DE (1) DE602006007889D1 (enExample)
TW (1) TWI307115B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4750525B2 (ja) * 2005-10-14 2011-08-17 キヤノン株式会社 露光方法及びデバイス製造方法
EP1857879A1 (en) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG An illumination system and a photolithography apparatus
JP4914272B2 (ja) 2007-04-02 2012-04-11 エルピーダメモリ株式会社 投影露光用のレチクル、該投影露光用のレチクルの製造方法及び該レチクルを用いた半導体装置
JP2009043789A (ja) * 2007-08-06 2009-02-26 Elpida Memory Inc パターン形成方法及びマスク
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP2010199347A (ja) * 2009-02-26 2010-09-09 Canon Inc 露光方法及びデバイス製造方法
US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
JP6363903B2 (ja) 2014-07-31 2018-07-25 株式会社キーエンス 光学的情報読取装置
DE102021211975A1 (de) * 2021-10-25 2023-04-27 Carl Zeiss Smt Gmbh Verfahren zur Nachbildung einer Ziel-Wellenfront eines abbildenden optischen Produktions-Systems sowie Metrologiesystem zur Durchführung des Verfahrens

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040075785A (ko) * 2003-02-21 2004-08-30 캐논 가부시끼가이샤 마스크 및 그의 제조방법, 노광방법, 그리고 디바이스의제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119217B2 (ja) * 1997-10-31 2000-12-18 日本電気株式会社 フォトマスクおよびフォトマスクを使用した露光方法
US7217503B2 (en) * 2001-04-24 2007-05-15 Canon Kabushiki Kaisha Exposure method and apparatus
JP3937903B2 (ja) 2001-04-24 2007-06-27 キヤノン株式会社 露光方法及び装置
DE10124803A1 (de) * 2001-05-22 2002-11-28 Zeiss Carl Polarisator und Mikrolithographie-Projektionsanlage mit Polarisator
JP3958163B2 (ja) * 2002-09-19 2007-08-15 キヤノン株式会社 露光方法
JP3997199B2 (ja) * 2002-12-10 2007-10-24 キヤノン株式会社 露光方法及び装置
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
TWI247339B (en) * 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
KR101547077B1 (ko) * 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP4684584B2 (ja) * 2003-07-23 2011-05-18 キヤノン株式会社 マスク及びその製造方法、並びに、露光方法
TWI379344B (en) * 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
TW200600829A (en) * 2004-06-16 2006-01-01 Nikon Corp Optical system, exposure device, and exposure method
EP1796139A4 (en) * 2004-08-10 2009-08-26 Nikon Corp OPTICAL LIGHTING DEVICES, EXPOSURE SYSTEM AND METHOD
TWI423301B (zh) * 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040075785A (ko) * 2003-02-21 2004-08-30 캐논 가부시끼가이샤 마스크 및 그의 제조방법, 노광방법, 그리고 디바이스의제조방법

Also Published As

Publication number Publication date
US20060197934A1 (en) 2006-09-07
EP1698940B1 (en) 2009-07-22
KR20060096896A (ko) 2006-09-13
TWI307115B (en) 2009-03-01
DE602006007889D1 (de) 2009-09-03
EP1698940A2 (en) 2006-09-06
TW200727337A (en) 2007-07-16
JP2006245115A (ja) 2006-09-14
JP4612849B2 (ja) 2011-01-12
US7359033B2 (en) 2008-04-15
EP1698940A3 (en) 2007-12-05

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